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				Fairchild Semiconductor
Part No.	FCH043N60
OCR Text	... features ?650 v @ t j = 150c ?typ. r ds(on) = 37 m ? ultra low gate charge (typ. q g = 163 nc) ? low effective output capacitance (typ. c oss(eff.) = 730 pf) ? 100% avalanche tested ?rohs compliant applications ? telecom / sever power...
Description	N-Channel SuperFET II MOSFET
File Size	424.68K / 10 Page	View it Online	Download Datasheet

				Dynex Semiconductor
Part No.	DIM1200ASM45-TS000 DIM1200ASM45-TS000-15
OCR Text	... 45 00v v ce(sat) * (typ) 2.7 v i c (max) 1200 a i c(pk) (max) 2400 a * measured at the auxiliary terminals fig. 1 circuit configuration outline ty pe code: a (see fig. 11 for ...
Description	Single Switch IGBT Module
File Size	352.01K / 8 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	UPG2185T6R-E2 UPG2185T6R-E2-A
OCR Text	...cont (h) = 1.8 to 3.6 v (3.0 v typ.) : v cont (l) = ? 0.2 to 0.2 v (0 v typ.) ? low insertion loss : l ins 1 = 0.40 db typ. @ f = 2.0 to 2.5 ghz, v cont (h) = 3.0 v, v cont (l) = 0 v : l ins 2 = 0.50 db typ. @ f = 2.5 ...
Description	GaAs Integrated Circuit SPDT Switch for 2 GHz to 6 GHz
File Size	111.29K / 11 Page	View it Online	Download Datasheet

				California Eastern Labs
Part No.	UPG2183T6C UPG2183T6C-E2 UPG2183T6C-E2-A
OCR Text	...: v bat = 2.9 to 3.2 v (3.0 v typ.) ? standby m ode voltage : v dd (h) = 1.7 to v bat v ( 2.65 v typ.) : v dd (l) = 0 to +0. 05 v (0 v typ.) ? switch control voltage : v cont (h) = 1.7 to v bat ...
Description	4W HIGH POWER SP4T SWITCH
File Size	526.28K / 13 Page	View it Online	Download Datasheet

				California Eastern Labs
Part No.	UPG2181T5R-A
OCR Text	...on ld-mosfet: 32.5 dbm p out typ 4 4 ne5511279a silicon ld-mosfet: 40 dbm p out typ 4 4 ne5531079a silicon ld-mosfet: 40 dbm p out typ 4 4 nesg250134 0.8 watt sige hbt 4 4 nesg260234 1 watt sige hbt 4 4 nesg270034 2 watt si...
Description	Front End Components for, LNAs for L to C-Band Applications
File Size	1,125.13K / 24 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPH11003NL
OCR Text	...ll gate charge: q sw = 2.0 nc (typ.) (3) low drain-source on-resistance: r ds(on) = 12.6 m ? (typ.) (v gs = 4.5 v) (4) low leakage current: i dss = 10 a (max) (v ds = 30 v) (5) enhancement mode: v th = 1.3 to 2.3 v (v ds = 10 v, i...
Description	Power MOSFET (N-ch single VDSS≤30V)
File Size	231.75K / 9 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPCP8007-H
OCR Text	...ll gate charge: q sw = 2.7 nc (typ.) ? low drain-source on-resistance: r ds (on) = 40 m (typ.) ? high forward transfer admittance: \|y fs \| = 16 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 60 v) ? enhancem...
Description	Power MOSFET (N-ch single 30V<VDSS≤60V)
File Size	177.46K / 7 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPCC8002-H
OCR Text	...ll gate charge: q sw = 7.1 nc (typ.) ? low drain-source on-resistance: r ds (on) = 7.6 m (typ.) ( v gs = 4.5 v) ? high forward transfer admittance: \|y fs \| = 65 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds =...
Description	Power MOSFET (N-ch single VDSS≤30V)
File Size	231.57K / 7 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPCA8A09-H
OCR Text	...all gate charge: q sw = 17 nc (typ.) (4) low drain-source on-resistance: r ds(on) = 2.2 m ? (typ.) (v gs = 4.5 v) (5) low leakage current: i dss = 100 a (max) (v ds = 30 v) (6) enhancement mode: v th = 1.3 to 2.3 v (v ds = 10 v, i...
Description	Power MOSFET (N-ch single VDSS≤30V)
File Size	252.28K / 9 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPC6009-H
OCR Text	...ll gate charge: q sw = 1.0 nc (typ.) (4) low drain-source on-resistance: r ds(on) = 66 m ? (typ.) (v gs = 4.5 v) (5) low leakage current: i dss = 10 a (max) (v ds = 40 v) (6) enhancement mode: v th = 1.3 to 2.3 v (v ds = 10 v, i d...
Description	Power MOSFET (N-ch single 30V<VDSS≤60V)
File Size	227.03K / 9 Page	View it Online	Download Datasheet

For typ. Found Datasheets File :: 358409 Search Time::4.078ms
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