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  to252-5-1 Datasheet PDF File

For to252-5-1 Found Datasheets File :: 857    Search Time::5.391ms    
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    SPD30N03L SPU30N03L

Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. SPD30N03L SPU30N03L
OCR Text ...PD30N03L SPU30N03L Package P-TO252 Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S Q67040-S4148-A2 Tape and Reel P-TO25...5 V, ID = 30 A VGS = 10 V, ID = 30 A 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one la...
Description N-Channel SIPMOS Power Transistor

File Size 84.85K  /  9 Page

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    SPD30N03S2L-07

Infineon Technologies A...
Infineon Technologies AG
Part No. SPD30N03S2L-07
OCR Text TO252 -3-11 V m A * Enhancement mode * Logic Level * Excellent Gate Charge x RDS(on) product (FOM) * Superior thermal resistance *...5.3 1 100 100 9.8 6.7 nA m Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state...
Description Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, DPAK, RDSon = 6.7mOhm, 30A, LL
OptiMOS Power-Transistor

File Size 259.62K  /  8 Page

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    SPD30N03S2L-10

Infineon Technologies AG
Part No. SPD30N03S2L-10
OCR Text TO252 -3-11 V m A * Enhancement mode * Logic Level * Low On-Resistance R DS(on) * Excellent Gate Charge x R DS(on) product (FOM) * Su...5 100 75 50 Unit K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified P...
Description OptiMOS Power-Transistor
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, DPAK, RDSon = 10.4mOhm, 30A, LL

File Size 255.84K  /  8 Page

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    SPD30N03S2L-20

Infineon Technologies AG
Part No. SPD30N03S2L-20
OCR Text TO252 -3-11 V m A * Enhancement mode * Logic Level * Excellent Gate Charge x RDS(on) product (FOM) * Superior thermal resistance *...5 100 75 50 Unit K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified P...
Description Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, DPAK, RDSon = 20mOhm, 30A, LL
OptiMOS Power-Transistor

File Size 261.11K  /  8 Page

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    SPD30N06S2-15 2N0615

Infineon Technologies AG
Part No. SPD30N06S2-15 2N0615
OCR Text TO252 -3-11 V m A * Enhancement mode * 175C operating temperature * Avalanche rated * dv/dt rated Type SPD30N06S2-15 Package Ord...5 - 8 16 39 5.6 11 24 52 - nC V(plateau) VDD =44V, ID =30A V Reverse Diode Inve...
Description From old datasheet system
OptiMOS Power-Transistor
Published by
Low Voltage MOSFETs - DPAK; 30 A; 55V; NL; 14,7 mOhm

File Size 265.06K  /  8 Page

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    SPD30N06S2-23 N06S2-23

Infineon Technologies AG
Part No. SPD30N06S2-23 N06S2-23
OCR Text TO252 -3-11 V m A * Enhancement mode * 175C operating temperature * Avalanche rated * dv/dt rated Type SPD30N06S2-23 Package Ord...5 100 75 50 Unit K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified P...
Description Low Voltage MOSFETs - DPAK; 30 A; 55V; NL; 23 mOhm
OptiMOS Power-Transistor

File Size 260.56K  /  8 Page

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    SPD30N06S2L-13

Infineon Technologies AG
Part No. SPD30N06S2L-13
OCR Text TO252 -3-11 V m A * Enhancement mode * Logic Level * 175C operating temperature * Avalanche rated * dv/dt rated Type SPD30N06S2L-13...5 9.7 1 100 100 17 13 nA m Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state...
Description Low Voltage MOSFETs - DPAK; 30 A; 55V; LL; 13mOhm
OptiMOS Power-Transistor

File Size 264.40K  /  8 Page

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    SPD30N06S2L-23

Infineon Technologies AG
Part No. SPD30N06S2L-23
OCR Text TO252 -3-11 V m A * Enhancement mode * Logic Level * 175C operating temperature * Avalanche rated * dv/dt rated Type SPD30N06S2L-23...5 100 75 50 Unit K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified P...
Description Low Voltage MOSFETs - DPAK; 30 A; 55V; LL; 23 mOhm
OptiMOS Power-Transistor

File Size 262.95K  /  8 Page

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    SPD30N08S2-22

Infineon Technologies AG
Part No. SPD30N08S2-22
OCR Text TO252 -3-11 V m A * Enhancement mode * 175C operating temperature * Avalanche rated * dv/dt rated Type SPD30N08S2-22 Package Ord...5 nA m Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=10...
Description OptiMOS Power-Transistor
Low Voltage MOSFETs - DPAK; 30 A; 75V; NL; 21,5 mOhm

File Size 264.75K  /  8 Page

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    SPD30N08S2L-21

Infineon Technologies AG
Part No. SPD30N08S2L-21
OCR Text TO252 -3-11 V m A * Enhancement mode * Logic Level * 175C operating temperature * Avalanche rated * dv/dt rated Type SPD30N08S2L-21...5 nA m Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4....
Description OptiMOS Power-Transistor
Low Voltage MOSFETs - DPAK; 30 A; 75V; LL; 20,5 mOhm

File Size 263.31K  /  8 Page

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