| |
|
 |
IRF[International Rectifier]
|
| Part No. |
JANTXV2N6798 JANTX2N6798
|
| OCR Text |
...
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry achieves very...205AF (Modified TO-39)
All dimensions are shown millimeters (inches)
WORLD HEADQUARTERS: 233 K... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=5.5A)
|
| File Size |
196.64K /
6 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
IRF[International Rectifier]
|
| Part No. |
JANTXV2N6800 JANTX2N6800
|
| OCR Text |
...
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry achieves very...205AF (Modified TO-39)
All dimensions are shown millimeters (inches)
WORLD HEADQUARTERS: 233 K... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=1.0ohm, Id=3.0A)
|
| File Size |
194.50K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
IRF[International Rectifier]
|
| Part No. |
JANTXV2N6802 JANTX2N6802
|
| OCR Text |
...
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry achieves very...205AF (Modified TO-39)
All dimensions are shown millimeters (inches)
WORLD HEADQUARTERS: 233 K... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=1.5ohm, Id=2.5A)
|
| File Size |
194.19K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| Part No. |
JANTXV2N6845 2N6845 JANTX2N6845
|
| OCR Text |
...
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry achieves very...205AF (Modified TO-39)
All dimensions are shown millimeters (inches)
WORLD HEADQUARTERS: 233 K... |
| Description |
POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.60ohm, Id=-4.0A) 功率MOSFET P沟道BVdss \u003d- 100V的，的Rds（on）\u003d 0.60ohm，身份证\u003d- 4.0a上）
POWER MOSFET P-CHANNEL(BVdss=-100V/ Rds(on)=0.60ohm/ Id=-4.0A)
Dual Wide-Bandwidth High-Output-Drive Op Amp w/Shutdown 14-PDIP -40 to 125
|
| File Size |
195.45K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| Part No. |
JANTXV2N6851 JANTX2N6851
|
| OCR Text |
...
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry achieves very...205AF (TO-39)
All dimensions are shown millimeters (inches)
WORLD HEADQUARTERS: 233 Kansas St.... |
| Description |
POWER MOSFET P-CHANNEL(BVdss=-200V, Rds(on)=0.80ohm, Id=-4.0A) 功率MOSFET P沟道（BVdss \u003d-00V，的Rds（on）\u003d 0.80ohm，身份证\u003d- 4.0a上）
|
| File Size |
196.87K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| Part No. |
FSL23A4R FSL23A4D FN4474 FSL23A4R4 FSL23A4D1 FSL23A4D3 FSL23A4R1 FSL23A4R3
|
| OCR Text |
... Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of...205AF
D
G
S
CAUTION: These devices are sensitive to electrostatic discharge; follow prop... |
| Description |
5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 5 A, 250 V, 0.48 ohm, N-CHANNEL, Si, POWER, MOSFET, to-205af
RECTIFIER BRIDGE 6A 100V 125A-ifsm 1.1V-vf 10uA-ir PBPC3 200/BOX 5 A, 250 V, 0.48 ohm, N-CHANNEL, Si, POWER, MOSFET, to-205af
RECTIFIER BRIDGE 3A 600V 50A-ifsm 1.2V-vf 10uA-ir PBPC3 200/BOX
RECTIFIER BRIDGE 3A 1000V 50A-ifsm 1.2V-vf 10uA-ir PBPC3 200/BOX
From old datasheet system
5A/ 250V/ 0.480 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
| File Size |
46.28K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
INTERSIL[Intersil Corporation]
|
| Part No. |
FSL23A0R FSL23A0D FN4476 FSL23A0R4 FSL23A0D1 FSL23A0D3 FSL23A0R1 FSL23A0R3
|
| OCR Text |
... Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of...205AF
D
G
S
Formerly available as type TA17697.
4-1
CAUTION: These devices are sen... |
| Description |
6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
6A/ 200V/ 0.350 Ohm/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs
From old datasheet system
|
| File Size |
71.38K /
8 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
