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  t.a Datasheet PDF File

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    2SB1180 2SB1180A

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1180 2SB1180A
OCR Text ...80A VCEO VEBO IC ICP PC Tj Tstg Ta = 25C Junction temperature Storage temperature Symbol VCBO Rating -60 -80 -60 -80 -7 -8 -12 15 1.3 150 -55 to +150 C C V A A W V Unit V 0.750.1 0.40.1 2.30.2 4.60.4 1 2 3 0.90.1 0 to 0.15 Collecto...
Description Silicon PNP epitaxial planar type darlington

File Size 84.71K  /  4 Page

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    2SB1181 2SB1260 2SB1241

ROHM[Rohm]
Part No. 2SB1181 2SB1260 2SB1241
OCR Text ...E !Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC ICP Limits -80 -80 -5 -1 -2 0.5 PC 2 1 10 Tj Tstg 150 -55~+150 W *2 *3 U...
Description Power Transistor

File Size 78.57K  /  3 Page

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    TY Semiconductor Co., Ltd
Part No. SSM6N35FE
OCR Text ...) absolute maximum ratings (ta = 25c) (q1, q2 common) characteristics symbol rating unit drain?source voltage v dss 20 v gate?source voltage v gss 10 v dc i d 180 drain current pulse i dp 360 ma drain power dissipati...
Description High-Speed Switching Applications

File Size 183.97K  /  2 Page

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    RJK6032DPH-E0 RJK6032DPH-E0T2

Renesas Electronics Corporation
Part No. RJK6032DPH-E0 RJK6032DPH-E0T2
OCR Text ...(at i d = 1.0 a, v gs = 10 v, ta = 25 ? c) ? low drive current ? high density mounting outline 1 1. gate 2. drain 3. source 4. drain 3 2 4 d g s renesas package code: prss0004zj-b (package name: to-251) absolute maximum...
Description 600V - 3A - MOS FET High Speed Power Switching

File Size 95.62K  /  7 Page

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    RB070M-30 RB070M-30TR

Rohm
Part No. RB070M-30 RB070M-30TR
OCR Text ...m) ? absolute maximum ratings (ta=25c) symbol unit v rm v v r v io a i fsm a tj c tstg c ? electrical characteristics (ta=25c) symbol min. typ. max. unit conditions v f 1 - 0.37 0.43 v i f =0.5a v f 2 - 0.44 0.49 v i f =1.5a reverse curre...
Description Shottky barrier diode
   Shottky barrier diode

File Size 333.21K  /  4 Page

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    Holtek Semiconductor Inc.
Part No. HT72XX
OCR Text ...50 w note: p d is measured at ta= 25c electrical characteristics t j=25 c, v in =v out +1.0v, i o =1ma, unless otherwise specifed symbol parameter test conditions min. typ. max. unit v in input voltage 8 v ?v out output voltage tole...
Description 300mA TinyPowerTM LDO

File Size 292.06K  /  10 Page

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    DTC115TN3

Cystech Electonics Corp.
Part No. DTC115TN3
OCR Text ... absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 100 ma power dissipation pd...
Description NPN Digital Transistors (Built-in Resistors)

File Size 145.85K  /  4 Page

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    2SB1207

PANASONIC CORP
PANASONIC[Panasonic Semiconductor]
Part No. 2SB1207
OCR Text ...ollector output capacitance (Ta=25C) Symbol ICBO VCBO VCEO VEBO hFE *1 Conditions VCB = -10V, IE = 0 IC = -10A, IE = 0 IC = -1mA, IB = 0 IE = -10A, IC = 0 VCE = -2V, IC = -0.5A*2 VCE = -2V, IC = -1A*2 IC = -0.4A, IB = -8mA IC = -0.4...
Description Silicon PNP epitaxial planer type(For low-voltage output amplification)

File Size 35.75K  /  2 Page

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    2SB1209

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1209
OCR Text ...ollector output capacitance (Ta=25C) Symbol VCBO VCEO VEBO hFE VCE(sat) VBE(sat) fT Cob Conditions IC = -100A, IE = 0 IC = -500A, IB = 0 IE = -100A, IC = 0 VCE = -5V, IC = -30mA IC = -10mA, IB = -1mA IC = -50mA, IB = -5mA VCB = -30V, IE...
Description Silicon PNP triple diffusion planer type(For low-frequency amplification)

File Size 37.38K  /  2 Page

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    TOSHIBA
Part No. TPCP8008-H
OCR Text ...) absolute maximum ratings (ta = 25c) characteristic symbol rating unit drain-source voltage v dss 30 v drain-gate voltage (r gs = 20 k ) v dgr 30 v gate-source voltage v gss 20 v dc (note 1) i d 8 drain current pul...
Description Power MOSFET (N-ch single VDSS≤30V)

File Size 203.82K  /  7 Page

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