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  stard-cell development flow Datasheet PDF File

For stard-cell development flow Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

    SOLOMON SYSTECH
Part No. DVM1821Z-A0 DVK1821Z-A0
Description development kit

File Size 208.95K  /  9 Page

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    SOLOMON SYSTECH
Part No. DVM1821Z-A1 DVK1821Z-A1
Description development kit

File Size 211.22K  /  11 Page

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    ANALOGICTECH[Advanced Analogic Technologies]
Part No. TFS942
Description development Specification

File Size 57.27K  /  5 Page

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    Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
Part No. CY7C1383B-83BGC CY7C1383B-83BZC CY7C1383B-83AC CY7C1383B-83BZI CY7C1383B-83BGI CY7C1383B-83AI CY7C1383B-117AC
Description 512 36/1M 18 flow-Thru SRAM 1M X 18 STANDARD SRAM, 10 ns, PQFP100
512 36/1M 18 flow-Thru SRAM 1M X 18 STANDARD SRAM, 7.5 ns, PQFP100
512 36/1M 18 flow-Thru SRAM 1M X 18 STANDARD SRAM, 10 ns, PBGA119
512 36/1M 18 flow-Thru SRAM 1M X 18 STANDARD SRAM, 10 ns, PBGA165

File Size 607.96K  /  31 Page

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    ISL9220AIRTZEVAL1Z ISL9220IRTZEVAL1Z

Intersil Corporation
Part No. ISL9220AIRTZEVAL1Z ISL9220IRTZEVAL1Z
Description    Switching Charger for 1-Cell and 2-Cell Li-ion Batteries

File Size 426.40K  /  15 Page

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    Micron Technology, Inc.
Part No. MT55L256V18F1 MT55L256L18F1
Description 2.5V I/O56K x 18,flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器)
3.3V I/O56K x 18,flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18,流量通过ZBT SRAM的电压(3.3V输入/输出Mb的流通式同步静态存储器

File Size 443.11K  /  25 Page

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    Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
Part No. CY7C1355B-117BGI CY7C1355B-117BZC CY7C1355B-117BGC CY7C1355B-117BZI CY7C1357B-100BGC CY7C1357B-117BGI CY7C1357B-133AI CY7C1357B-133BGI CY7C1357B-117AI CY7C1357B-117AC CY7C1357B-100AC CY7C1357B-100BGI CY7C1355B-133AI CY7C1355B-133AC CY7C1355B-133BGI CY7C1355B-133BGC CY7C1357B-117BZC CY7C1357B-117BZI CY7C1355B-100BG CY7C1355B-100BZI CY7C1355B-133BZI CY7C1355B-117AC CYPRESSSEMICONDUCTORCORP-CY7C1357B-117AI
Description 9-Mb (256K x 36/512K x 18) flow-Through SRAM with NoBL Architecture 9 - MB的(256 × 36/512K × 18)流体系结构,通过与总线延迟静态存储器
9-Mb (256K x 36/512K x 18) flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 6.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7 ns, PQFP100

File Size 562.42K  /  33 Page

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    ZXSC10004 ZXSC100X8 ZXSC100N8 ZXSC100

ZETEX[Zetex Semiconductors]
Part No. ZXSC10004 ZXSC100X8 ZXSC100N8 ZXSC100
Description Single Cell System Power Boost Converter
SINGLE CELL DC-DC CONVERTER SOLUTION

File Size 302.50K  /  17 Page

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    FREESCALE[Freescale Semiconductor, Inc]
Part No. MPC8280
Description CodeWarrior⑩ development Studio

File Size 928.09K  /  2 Page

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    Sigma Designs
Part No. SMP8634
Description WinCE BSP And development Help

File Size 4,281.62K  /  89 Page

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For stard-cell development flow Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

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