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NXP Semiconductors N.V.
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| Part No. |
BGA2012
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| OCR Text |
...ions in a 6-pin sot363 plastic smd package. pinning pin description 1rf in 2v c 3v s 4rf out 5, 6 gnd handbook, halfpage top view mbl251 bi...c6 multilayer ceramic chip capacitor ? 100 nf 0805 l1 smd inductor ? 3.9 nh 0603 l2 smd inductor ? 3... |
| Description |
1900 MHz high linear low noise amplifier
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| File Size |
98.38K /
12 Page |
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Vishay Sprague
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| Part No. |
94SVP157X0016F8 94SVP827X06R3F12
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| OCR Text |
...th at www.vishay.com/doc?91000 smd aluminum solid capacitors with conductive polymer features ? vishay os-con series utilizes a polymerized...c6 6.3 6.0 6.6 6.6 7.3 0.5 to 0.8 2.1 e7 8.0 7.0 8.3 8.3 9.0 0.5 to 0.8 3.2 f8 10.0 8.0 10.3 1... |
| Description |
CAP 150UF 16VDC 20% 10 X 8MM SMD 0.035 OHM 2670MA 2000 HR - Tape and Reel Cap Aluminum 820uF 6.3V 20% (10 X 12.7mm) SMD 0.014 Ohm 5040mA 2000 hr 105C
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| File Size |
80.18K /
4 Page |
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NXP Semiconductors N.V.
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| Part No. |
BLF6G38LS-100
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| OCR Text |
...citor 470 ? f; 63 v l1 ferrite smd bead - r1, r2, r3 smd resistor 9.1 ? smd 1206 table 10. measured test circuit impedances f z i z o (ghz...c6 c7 c8 l1 r3 c9 c10 c11 c5 r2 c2 c1 c3
blf6g38-100_6g38ls-100_1 all information provided in this... |
| Description |
WiMAX power LDMOS transistor
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| File Size |
120.00K /
13 Page |
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INFINEON TECHNOLOGIES AG
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| Part No. |
IPA65R280C6
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| OCR Text |
...nction - ambient r thja - - 62 smd version, device on pcb, minimal footprint - 35 - smd version, device on pcb, 6cm 2 cooling area 1) ...c6 power transistor ipx65r280c6 electrical characteristics final data sheet 6 rev. 2.0, 2010-07-2... |
| Description |
650 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| File Size |
4,265.26K /
19 Page |
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Infineon Technologies AG
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| Part No. |
IPI60R380C6 IPA60R380C6 IPP60R380C6 IPB60R380C6 IPD60R380C6
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| OCR Text |
...in. Values Typ. Max. 1.5 62 C/W SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6cm2 cooling area1) 260 C reflow M...C6 Power Transistor IPx60R380C6
Electrical characteristics
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Electrical characteristics
El... |
| Description |
10.6 A, 600 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 Metal Oxide Semiconductor Field Effect Transistor
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| File Size |
2,035.33K /
19 Page |
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Price and Availability
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