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CEL[California Eastern Labs]
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| Part No. |
GET-30704
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| OCR Text |
...NEC has developed many Kinds of Si-monolithic microwave ICs. In this report, the device structure and the results of the reliability qualifi...Po
;j 00 <1>
C/) -+00 ~
~ .+.J
00 <1>
<l> ~
<l> s
0 C) ~ "~ 00 "@ >-Q)
00 0 0 Ctj ... |
| Description |
Qualification Test Results on Si MMIC
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| File Size |
8,849.79K /
20 Page |
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it Online |
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HYNIX[Hynix Semiconductor]
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| Part No. |
GL6850 GL68501
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| OCR Text |
...rigger to start for VSUS A CC A SI V V VDIS and IDIS are the conditions applied to trigger to inhibit oscillation for VSI AVCC Trigger current must be limited to this value externally.
2
GL6850
PIN DESCRIPTION
PIN NUMBER PIN 1 PIN2 ... |
| Description |
TWO TONE RINGER
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| File Size |
35.56K /
3 Page |
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it Online |
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SHARP[Sharp Electrionic Components]
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| Part No. |
GP1A91LCJ00F
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| OCR Text |
...y Photo diode Material Silicon (Si) Maximum Sensitivity wavelength (nm) 900 Sensitivity wavelength (nm) 700 to 1 200 Response time (s) 3
* Photo emitter (qty. : 1)
Category Infrared emitting diode (non-coherent) Material Gallium arsenid... |
| Description |
Gap : 1.2mm, Slit : 0.23mm OPIC Output, Compact Transmissive Photointerrupter
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| File Size |
143.35K /
11 Page |
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it Online |
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SHARP[Sharp Electrionic Components]
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| Part No. |
GP1A91LRJ00F
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| OCR Text |
...y Photo diode Material Silicon (Si) Maximum Sensitivity wavelength (nm) 900 Sensitivity wavelength (nm) 700 to 1 200 Response time (s) 3
* Photo emitter (qty. : 1)
Category Infrared emitting diode (non-coherent) Material Gallium arsenid... |
| Description |
Gap : 1.2mm, Slit : 0.23mm OPIC Output, Compact Transmissive Photointerrupter
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| File Size |
144.92K /
11 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
HI5675_03 HI5675JCB HI567503
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| OCR Text |
SI B L PO S R SI L PA I N TE
HI5675
March 2003 FN4711.1
8-Bit, 20MSPS, Flash A/D Converter
The HI5675 is an 8-bit, analog-to-digital converter built in an advanced CMOS process. The low power, low differential gain and phase, high s... |
| Description |
8-Bit, 20MSPS, Flash A/D Converter
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| File Size |
201.64K /
10 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
HS-6564RH
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| OCR Text |
... CMOS - Total Dose 1 x 105 RAD (Si) - Transient Upset > 1 x 108 RAD (Si)/s - Latch-Up Free to > 1 x 1012 RAD (Si)/s * Low Power Standby 4.4mW Maximum * Low Power Operation 308mW/MHz Maximum * Data Retention 3.0V Minimum * TTL Compatible In/... |
| Description |
Radiation Hardened 8K x 8, 16K x 4 CMOS RAM Module
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| File Size |
568.67K /
9 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFM260
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| OCR Text |
...D ra in -to -S o u rc e O n R e si sta n ce (N o rm a li ze d )
I D = 46 A
I D , D r ain- to-S ourc e C urre nt (A )
2.0
100
...PO NSE)
N otes : 1 . D uty fac tor D = t PD M
0.01
t
1 t2
1
/t
2
0.001 0.00001... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.060ohm, Id=35A*)
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| File Size |
284.37K /
8 Page |
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it Online |
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Diodes, Inc.
NEC[NEC]
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| Part No. |
NP50P04KDG-E2-AY NP50P04KDG NP50P04KDG-E1-AY
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| OCR Text |
...10 V)
m
i
s
D er is p si io at n d it e m Li
TC = 25C Single Pulse
-0.01 -0.1
-1
-10
-100
VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - C/W... |
| Description |
50 A, 40 V, 0.015 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZK, TO-263, 3 PIN
MOS FIELD EFFECT TRANSISTOR
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| File Size |
170.73K /
7 Page |
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it Online |
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NEC[NEC]
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| Part No. |
NP50P06KDG-E2-AY NP50P06KDG NP50P06KDG-E1-AY
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| OCR Text |
... -0.1
TC = 25C Single Pulse
si is t io pa n d it e m Li
-0.01 -0.1
-1
-10
-100
VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - C/W
1000
100
Rth... |
| Description |
MOS FIELD EFFECT TRANSISTOR
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| File Size |
174.18K /
7 Page |
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it Online |
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