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				Nanya
Part No.	M2S4G64CB8HB5N M2S1G64CBH4B5P
OCR Text	...g for 1gb ? 1 5 /10/ 1 (row/column/rank) addressing for 2gb ? 15/10/ 2 (row/column/rank) addressing for 4 gb ? extended operating temperature rage ? auto self - refresh option ? serial presence detect ? gold...
Description	Unbuffered DDR3 SO-DIMM
File Size	617.21K / 28 Page	View it Online	Download Datasheet

				ALTERA[Altera Corporation]
Part No.	EPF8452A EPF81500A EPF81188A EPF8636A EPF8820A EPF8282A EPF8282AV FLEX8000
OCR Text	... are located at the end of each row (horizontal) and column (vertical) FastTrack Interconnect path. Altera Corporation 5 FLEX 8000 Programmable Logic Device Family Data Sheet Logic Array Block A logic array block (LAB) consists...
Description	programmable logic device family FLEX8000包括EPF8282A. PROGRAMMABLE LOGIC DEVICES FAMILY
File Size	425.22K / 61 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HYM71V16635BLT8
OCR Text	... /cas activity a0 ~ a11 address row address : ra0 ~ ra11, co lumn address : ca0 ~ ca9 auto-precharge flag : a10 /ras, /cas, /we row address strobe, column address strobe, write enable /ras, /cas and /we define the operation refer function ...
Description	PC133 SDRAM Unbuffered DIMM
File Size	376.45K / 14 Page	View it Online	Download Datasheet

				ESS Technology ETC[ETC] List of Unclassifed Manufacturers
Part No.	ES4428 ES4427
OCR Text	...enable. DRAM write enable. DRAM row address strobe 0. DRAM row address strobe 1 (active-low). DRAM address bus select 1 output. Only active in 64Mb SDRAM mode. DRAM row address strobe 2 output. DRAM address bus select 0 output. Only active ...
Description	Web/DVD Set-Top Box Solution
File Size	119.20K / 10 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HYM71V16635BLT6
OCR Text	... /cas activity a0 ~ a11 address row address : ra0 ~ ra11, column address : ca0 ~ ca8 auto-precharge flag : a10 /ras, /cas, /we row address strobe, column address strobe, write enable /ras, /cas and /we define the operation refer function t...
Description	PC133 SDRAM Unbuffered DIMM
File Size	445.27K / 14 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-B K4E170411D-F K4E170412D-F K4E170412D-B
OCR Text	...of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are...
Description	4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
File Size	254.50K / 21 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F
OCR Text	...of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this ...
Description	4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
File Size	223.25K / 20 Page	View it Online	Download Datasheet

				Micron Technology
Part No.	MT41K256M4
OCR Text	...8 x 8 banks refresh count 8k 8k row address 16k a[13:0] 16k a[13:0] bank address 8 ba[2:0] 8 ba[2:0] column address 2k a[11, 9:0] 1k a[9:0] preliminary ? 1gb: x4, x8 ddr3l sdram addendum description pdf: 09005aef833b7221 1gb_1_35v_ddr3.pdf ...
Description	1.35V DDR3L SDRAM Addendum
File Size	384.29K / 15 Page	View it Online	Download Datasheet

				EMC[ELAN Microelectronics Corp]
Part No.	EM91450B EM91450BP EM91450DK EM91450D EM91450AP EM91450 EM91450A EM91450C EM91450CK
OCR Text	...terface (column) Output circuit Row/Column programming counter HFO HDO RMUTE XMUTE I/O circuit Memory latch & decoder D/A converter DTMF XIN XOUT Oscillator Timing/Control circuit ROW1 Keyboard interface (Row) ...
Description	TONE/PULSE DIALER WITH LCD INTERFACE AND I.P.P. DETECT FUNCTION
File Size	212.25K / 24 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	HM514400B HM514400BL HM514400C HM514400CL HM514400CLS-6 HM514400CLS-7 HM514400CLS-8 HM514400BLTT-6 HM514400BLTT-7 HM514400BLTT-8 HM514400CLTT-6 HM514400CLTT-7 HM514400CLTT-8
OCR Text	... address input Data-in/Data-out Row address strobe Column address strobe Read/Write enable Output enable Power (+5 V) Ground 4 Block Diagram RAS Row Driver Row Driver RAS Control Circuit 256 k Memory Array Mat 256 k Me...
Description	1,048,576-word x 4-bit dynamic random access memory, 80ns 1,048,576-word x 4-bit dynamic random access memory, 60ns 1/048/576-word X 4-bit Dynamic Random Access Memory 1,048,576-word x 4-bit dynamic random access memory, 70ns
File Size	231.12K / 27 Page	View it Online	Download Datasheet

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