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  rg-195 u Datasheet PDF File

For rg-195 u Found Datasheets File :: 657    Search Time::1.547ms    
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    HFA50PA60C

International Rectifier
Part No. HFA50PA60C
OCR Text ...uit L = 100H HIGH-SPEED SWITCH Rg = 25 ohm CuRRENT MONITOR FREE-WHEEL DIODE + Vd = 50V Fig. 10 - Reverse Recovery Waveform and Definitions I L(PK) DuT DECAY TIME V (AVAL) V R(RATED) Fig. 11 - Avalanche Test Circuit and Wavefor...
Description HEXFREDTM ultrafast, Soft Recovery Diode

File Size 239.28K  /  5 Page

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    IRFS640 IRFS640B IRF640B IRF640 IRF640BTSTUFP001 IRF640BFP001

FAIRCHILD[Fairchild Semiconductor]
http://
Part No. IRFS640 IRFS640B IRF640B IRF640 IRF640BTSTuFP001 IRF640BFP001
OCR Text ..., 5) VDD = 100 V, ID = 18 A, RG = 25 (Note 4, 5) -------- 20 145 145 110 45 6.5 22 50 300 300 230 58 --- ns ns ns ns nC nC ...195 1.47 18 72 1.5 --- A A V ns C Notes: 1. Repetitive Rating : Pulse width limited by maxi...
Description 200V N-Channel B-FET / Substitute of IRF640 & IRF640A
200V N-Channel MOSFET

File Size 913.80K  /  10 Page

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    IXYS[IXYS Corporation]
Part No. IXFN80N50 IXFN75N50
OCR Text ... 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C 64 6 5 700 -55 ... +150 150 -55 ... +150 Either Source terminal of miniBLOC can be us...195 1.045 0.155 0.186 0.968 -0.002 Max. 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 ...
Description (IXFN80N50 / IXFN75N50) HiPerFET Power MOSFETs Single Die MOSFET

File Size 125.53K  /  4 Page

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    SMOS44N50 SMOS48N50

ETC
Part No. SMOS44N50 SMOS48N50
OCR Text ...us; VDD VDSS' 5 150 C; RG=2 520 -55...+150 150 -55...+150 o PD TJ TJM Tstg TL VISOL TC=25oC W C 1.6mm(0.063 in.) from case for 10s 50/60Hz,RMS IISOL 1mA t=1 min t=1 s 2500 3000 1.5/13 1.5/13 30 o C V~ ...
Description POWER MOSFETS

File Size 162.20K  /  2 Page

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    IXYS[IXYS Corporation]
IXYS, Corp.
Part No. IXTH14N100
OCR Text ...VDS = 0.5 * VDSS, ID = 0.5 ID25 RG = 2 , (External) 21 80 36 195 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 28 85 0.35 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain 1 2 3 TO-247 AD O...
Description Discrete MOSFETs: Standard N-channel Types
MegaMOSTMFET 14 A, 1000 V, 0.82 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD

File Size 45.69K  /  2 Page

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    hitachi
Part No. 2SK3155
OCR Text ...Tc = 25C 3. Value at Tch = 25C, Rg 50 2 2SK3155 Electrical Characteristics (Ta = 25C) Item Symbol Min 150 20 -- -- 1.0 -- -- 8.5 -...195 110 0.9 140 Max -- -- 10 10 2.5 0.13 0.15 -- -- -- -- -- -- -- -- -- -- unit V V A A V S pF pF...
Description Silicon NPN Triple Diffused
From old datasheet system

File Size 59.07K  /  10 Page

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    INTERSIL[Intersil Corporation]
Part No. HGTD1N120BNS FN4649 HGTP1N120BN
OCR Text ... 3. VCE(PK) = 840V, TJ = 125oC, RG = 82. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250A, VGE = 0V IC = 10mA, VGE = 0V VCE = BVCES TC = 25oC TC = 125oC TC = ...
Description 5.3A/ 1200V/ NPT Series N-Channel IGBT
5.3A, 1200V, NPT Series N-Channel IGBT
From old datasheet system

File Size 71.00K  /  7 Page

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    INTERSIL[Intersil Corporation]
Part No. HGTD1N120CNS FN4652 HGTP1N120CN
OCR Text ... 3. VCE(PK) = 840V, TJ = 125oC, RG = 82. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES BVECS...195 155 20 18 100 625 460 225 2.1 uNITS ns ns ns ns J J J ns ns ns ns J J J oC/W Typical Perform...
Description From old datasheet system
6.2A 1200V NPT Series N-Channel IGBT
6.2A, 1200V, NPT Series N-Channel IGBT

File Size 76.20K  /  7 Page

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    IXFN39N90NBSP IXFN39N90

IXYS[IXYS Corporation]
Part No. IXFN39N90NBSP IXFN39N90
OCR Text ... 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C IXFN 39N90 VDSS ID25 RDS(on) = = = 900 V 39 A 0.22 D trr 250 ns G S...195 1.045 0.155 0.186 0.968 -0.002 Max. 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 ...
Description HiPerFET Power MOSFETs Single MOSFET Die

File Size 123.63K  /  4 Page

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    Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. HGT1S12N60B3DS HGTP12N60B3D HGTG12N60B3D FN4411
OCR Text ... 2. VCE(PK) = 360V, TJ = 125oC, RG = 25. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES ICES VCE(SAT) VGE(TH) IGES SSOA VGEP Qg(ON) td(ON)I trI td(OFF)I tfI EON EOFF td(ON)I trI td(OFF)I tfI EO...
Description 27A, 600V, uFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode(27A, 600V, uFS系列带超快二极管 N沟道绝缘栅双极型晶体 27 A, 600 V, N-CHANNEL IGBT, TO-263AB
From old datasheet system

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