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TriQuint Semiconductor,Inc.
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| Part No. |
TGA9088A-SCC
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| OCR Text |
...the tga9088a-scc is 100% dc and rf tested on-wafer to ensure performance compliance. 0 5 10 15 20 25 17 18 19 20 21 frequency (ghz) p2db (db...w 3/ 4 / t ch operating channel temperature 150 0 c1/ 2 / t m mounting temperature (30 seconds) 320... |
| Description |
17-21 GHz Medium Power Amplifier
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| File Size |
164.63K /
8 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
Mrf6S19140HSR3 Mrf6S19140HR3 Mrf6S19140HR3_07
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| OCR Text |
rf Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with...w AVG., 28 V 2 x N - CDMA LATERAL N - CHANNEL rf POwER MOSFETs
CASE 465B - 03, STYLE 1 NI - 880 M... |
| Description |
rf Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
400.35K /
11 Page |
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it Online |
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Freescale (Motorola)
FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
Mrf6S19140HSR3 Mrf6S19140HR3
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| OCR Text |
rf Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with...w AVG., 28 V 2 x N - CDMA LATERAL N - CHANNEL rf POwER MOSFETs
CASE 465B - 03, STYLE 1 NI - 880 M... |
| Description |
N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
394.12K /
12 Page |
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it Online |
Download Datasheet |
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Freescale Semiconductor...
FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
Mrf6S19060NR1 Mrf6S19060NBR1 Mrf6S19060N Mrf6S19060NR108
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| OCR Text |
rf Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA base station applications with fr...w L L applications. * Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 610 mA, Pout =... |
| Description |
rf Power Field Effect Transistors
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| File Size |
605.95K /
16 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
Mrf6S18140HSR3 Mrf6S18140HR3
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| OCR Text |
rf Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N- CDMA base station applications with fre...w L L applications. * Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout ... |
| Description |
rf Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
405.55K /
12 Page |
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it Online |
Download Datasheet |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
Mrf6S18060MBR1 MRD6S18060MR1
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| OCR Text |
...r: Mrf6S18060 Rev. 2, 5/2006
rf Power Field Effect Transistors
Mrf6S18060MR1 Mrf6S18060MBR1
1800 - 2000 MHz, 60 w, 26 V GSM/GSM EDGE LATERAL N - CHANNEL rf POwER MOSFETs
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for... |
| Description |
rf Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
676.45K /
20 Page |
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it Online |
Download Datasheet |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
Mrf6P9220HR3
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| OCR Text |
rf Power Field Effect Transistor
N -Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial application...w AVG., 28 V SINGLE N -CDMA LATERAL N -CHANNEL rf POwER MOSFET
CASE 375G-04, STYLE 1 NI-860C3
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| Description |
880 MHz, 47 w AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL rf POwER MOSFET
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| File Size |
431.30K /
12 Page |
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it Online |
Download Datasheet |
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