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INTERSIL[Intersil Corporation]
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Part No. |
FSF9150R FSF9150D FN4089 FSF9150R4 FSF9150D1 FSF9150D3 FSF9150R1 FSF9150R3
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OCR Text |
Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
Description
The Discrete Products Operation of Intersil Corporation has developed a seri...tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switc... |
Description |
22A/ -100V/ 0.140 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs From old datasheet system
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File Size |
44.38K /
8 Page |
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INTERSIL[Intersil Corporation] Intersil, Corp.
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Part No. |
FSL234R FSL234D FN4030 FSL234R4 FSL234D1 FSL234D3 FSL234R1 FSL234R3
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OCR Text |
Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
Description
The Discrete Products Operation of Intersil Corporation has developed a seri...tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switc... |
Description |
4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 4A/ 250V/ 0.610 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs From old datasheet system 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 4 A, 250 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
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File Size |
45.36K /
8 Page |
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it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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Part No. |
FSYA9150R FSYA9150D FN4582 FSYA9150R4 FSYA9150D1 FSYA9150D3 FSYA9150R1 FSYA9150R3
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OCR Text |
... 0.140 * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) * Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias * D... |
Description |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs From old datasheet system
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File Size |
55.68K /
8 Page |
View
it Online |
Download Datasheet |
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International Rectifier, Corp.
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Part No. |
JANSH2N7261
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OCR Text |
...100volt, 0.18 w w w w w , mega rad hard hexfet international rectifiers rad hard technology hexfets demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x10 6 rads(si). u... |
Description |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR 重复性雪崩和DV /受好评的HEXFET晶体管胸
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File Size |
292.24K /
12 Page |
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it Online |
Download Datasheet |
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Intersil, Corp. INTERSIL[Intersil Corporation]
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Part No. |
FSS23A0R FSS23A0D FSS23A0D1 FSS23A0D3 FSS23A0R1 FN4485 FSS23A0R4 FSS23A0R3
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OCR Text |
... 0.330 * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) * Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias * D... |
Description |
9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 200 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA From old datasheet system 9A/ 200V/ 0.330 Ohm/ Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
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File Size |
56.22K /
8 Page |
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it Online |
Download Datasheet |
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Intersil, Corp. INTERSIL[Intersil Corporation]
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Part No. |
FSYA250R FSYA250D FSYA250R1 FN4313 FSYA250R4 FSYA250D1 FSYA250D3 FSYA250R3
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OCR Text |
Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
Description
The Discrete Products Operation of Intersil Corporation has developed a seri...tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switc... |
Description |
27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 27 A, 200 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system 27A/ 200V/ 0.100 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
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File Size |
45.54K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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