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  process temperature Datasheet PDF File

For process temperature Found Datasheets File :: 91412    Search Time::1.547ms    
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    IRF1404L IRF1404S

IRF[International Rectifier]
Part No. IRF1404L IRF1404S
OCR Text process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175C Operating temperature l Fast Switching l Fully Avalanche Rated Description (R) l l IRF1404S IRF1404L D VDSS = 40V G S RDS(on) = 0.004 ID = 162A Sevent...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A)

File Size 237.30K  /  10 Page

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    IRF1404

International Rectifier
Part No. IRF1404
OCR Text process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating temperature Fast Switching Fully Avalanche Rated D VDSS = 40V G S RDS(on) = 0.004 ID = 162A Description Seventh Generation HEXFET(R) Power MOSFETs ...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A)
Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=162A)

File Size 105.33K  /  8 Page

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    IRF1405L IRF1405S

IRF[International Rectifier]
Part No. IRF1405L IRF1405S
OCR Text ...ate Control Power Door Advanced process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G VDSS = 55V RDS(on) = 5.3m S Benefits q q q q q q ...
Description Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?
Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=131A)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?)
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 153.38K  /  11 Page

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    IRF1405

International Rectifier
Part No. IRF1405
OCR Text ...ate Control Power Door Advanced process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G VDSS = 55V RDS(on) = 5.3m S Benefits q q q q q q ...
Description Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A)
Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=169A)

File Size 114.28K  /  9 Page

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    IRF1407L IRF1407S IRF1407STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF1407L IRF1407S IRF1407STRR
OCR Text process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G VDSS = 75V RDS(on) = 0.0078 S Description Advanced HEXFET(R) Power MOSFETs from ...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?)
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A)
Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A)
TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 75V的五(巴西)直| 100号A(丁)|63AB

File Size 158.12K  /  11 Page

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    IRF1407

International Rectifier
Part No. IRF1407
OCR Text ...ive Electrical Systems Advanced process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 75V G S Benefits q q q q q q RDS(on) = 0.00...
Description Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?)
POWER MOSFET(VDSS=75V, RDS(ON)=0.0078OHM, ID=130Aㄌ)
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A)
Power MOSFET(Vdss=75V/ Rds(on)=0.0078ohm/ Id=130A)

File Size 126.10K  /  9 Page

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    IRF1704

International Rectifier
Part No. IRF1704
OCR Text process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Repetitive Avalanche Allowed up to Tj Max Automotive Qualifie...temperature with a Stripe Planar design that utilizes the latest processing techniques to achieve ex...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A??
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A)
POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?)
Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)

File Size 100.05K  /  8 Page

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    IRF2204

International Rectifier
Part No. IRF2204
OCR Text ...ive Electrical Systems Advanced process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 40V G S Features RDS(on) = 3.6m ID = ...
Description 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
AUTOMOTIVE MOSFET

File Size 138.67K  /  9 Page

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    IRF2804S-7P

IRF[International Rectifier]
Part No. IRF2804S-7P
OCR Text process Technology Ultra Low On-Resistance 175C Operating temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 40V G S RDS(on) = 1.6m ID = 160A Description Specifically designed for Automotive applications, ...
Description AUTOMOTIVE MOSFET

File Size 260.32K  /  10 Page

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    IRF2804 IRF2804L IRF2804S

IRF[International Rectifier]
Part No. IRF2804 IRF2804L IRF2804S
OCR Text process Technology Ultra Low On-Resistance 175C Operating temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 40V RDS(on) = 2.0m G S Description Specifically designed for Automotive applications, this HEXFET...
Description 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 273.77K  /  12 Page

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For process temperature Found Datasheets File :: 91412    Search Time::1.547ms    
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