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				Philips Semiconductors
Part No.	BLV103
OCR Text	...THERMAL RESISTANCE SYMBOL Rth j-mb Rth mb-h PARAMETER from junction to mounting base from mounting base to heatsink CONDITIONS Tmb = 25 C; P...9 mm x 2.4 mm 23 mm x 2.4 mm 16 mm x 2.4 mm 3 mm x 3 mm int. dia. 3 mm; length 5 mm; leads 2 mm x 5 ...
Description	UHF power transistor
File Size	89.32K / 10 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	BLV193
OCR Text	...THERMAL RESISTANCE SYMBOL Rth j-mb Rth mb-h PARAMETER from junction to mounting base from mounting base to heatsink CONDITIONS Pdis = 44 W; ...9 Gain as a function of load power (PEP), typical values. Fig.10 Load power (PEP) as a functio...
Description	UHF power transistor
File Size	107.99K / 14 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BT258U-800R BT258U-600R BT258U BT258U-500R
OCR Text	...ERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS MIN. - BT258U series TYP. 70 MAX. 2.0 - UNIT K/W K/W Thermal ...9 180 1.57 BT150 Tmb(max) / C a = 1.57 1.9 109 111 113 115 117 119 121 123 80 70 60 50 4...
Description	Thyristors logic level 8 A, 800 V, SCR, TO-251
File Size	50.55K / 6 Page	View it Online	Download Datasheet

				http:// PHILIPS[Philips Semiconductors]
Part No.	BUK220-50Y BUK220-50Y_1
OCR Text	...PINNING - SOT426 PIN 1 2 3 4 5 mb DESCRIPTION Ground Input (connected to mb) Status Load Battery PIN CONFIGURATION mb SYMBOL I S ...9 V VBG 16 V VLG = 0 V Tmb = 25C 4 MIN. 50 50 18 20 TYP. 55 55 23 25 MAX. 65 65 28 30 ...
Description	From old datasheet system TOPFET high side switch SMD version of BUK219-50Y
File Size	38.65K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK221-50DY
OCR Text	... Pinning information B S mb I1 P I2 1234567 L2 L1 Front view MBK128 G 03pa68 No connection can be made to pin 4 (cropp...9 Tmb = 150 C Tmb = 25 C IL(off) off-state load current VBL = VBG; per channel Tmb = 150 C Tmb = 25 ...
Description	Dual channel high-side TOPFET
File Size	90.52K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK7213-40A
OCR Text	...information Table 1: Pin 1 2 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Description gate (g) mb d Simplified outline ...9 Tj = 25 C Tj = 175 C Tj = -55 C IDSS drain-source leakage current VDS = 40 V; VGS = 0 V Tj = 25 C ...
Description	TrenchMOS standard level FET TrenchMOS?? standard level FET Trenchmos (tm) standard level FET
File Size	103.12K / 14 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK7227-100B
OCR Text	...information Table 1: Pin 1 2 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Simplified outline [1] Description gate (g) d...9 Tj = 25 C Tj = 185 C Tj = -55 C IDSS drain-source leakage current VDS = 100 V; VGS = 0 V Tj = 25 C...
Description	TrenchMOS standard level FET
File Size	86.14K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK7240-100A
OCR Text	...information Table 1: Pin 1 2 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Description gate (g) mb Simplified outline ...9 Tj = 25 C Tj = 175 C Tj = -55 C IDSS drain-source leakage current VDS = 100 V; VGS = 0 V Tj = 25 C...
Description	TrenchMOS standard level FET TrenchMOS TM standard level FET TrenchMOS⑩ standard level FET
File Size	106.46K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUT11AI
OCR Text	...ERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient in free air CONDITIONS TYP. MAX. 1.25 60 ...9.0 V; IC = 0 A IB = 0 A; IC = 100 mA; L = 25 mH IC = 2.5 A;IB = 0.33 A IC = 2.5 A;IB = 0.33 A IC = ...
Description	Silicon Diffused Power Transistor
File Size	17.61K / 4 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	BUT11 BUT11A
OCR Text	...AL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 1.25 UNIT K/W 1997 Aug 13 1 Ph...9 - IC = 2.5 A; IB = 500 mA; see Figs 7 and 9 IC = 3 A; IB = 0.6 A; see Fig.7 IC = 2.5 A; IB = 0.5 A...
Description	Silicon Diffused Power Transistor(硅扩散功率型晶体 Silicon diffused power transistors
File Size	96.54K / 12 Page	View it Online	Download Datasheet

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