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  low-curent Datasheet PDF File

For low-curent Found Datasheets File :: 2164    Search Time::2.14ms    
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    IRLML2402TR IRLML2402

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRLML2402TR IRLML2402
OCR Text Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching D G S RDS(on) = ...Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig ...
Description HEXFET POWER MOSFET HEXFET功率MOSFET

File Size 198.30K  /  8 Page

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    IRLML2803 IRLML2803TR IRLML2803PBF

IRF[International Rectifier]
Part No. IRLML2803 IRLML2803TR IRLML2803PBF
OCR Text Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching D G S RDS(on) = ...Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig ...
Description 30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package
Power MOSFET(Vdss=30V, Rds(on)=0.25ohm)

File Size 188.07K  /  9 Page

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    Kersemi Electronic Co., Ltd.
Kersemi Electronic Co., Ltd...
Part No. IRF1404LPBF IRF1404SPBF
OCR Text ...techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized de...curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet ? power mosfets ...
Description HEXFET? Power MOSFET

File Size 3,880.58K  /  10 Page

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    IRFPC50A

IRF[International Rectifier]
Part No. IRFPC50A
OCR Text ...ax 0.58 ID 11A Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedne...Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig ...
Description Power MOSFET(Vdss=600V, Rds(on)max=0.58ohm, Id=11A)

File Size 94.48K  /  8 Page

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    IRFR1205 IRFU1205 IRFRU1205

IRF[International Rectifier]
Part No. IRFR1205 IRFU1205 IRFRU1205
OCR Text Low On-Resistance Surface Mount (IRFR1205) Straight Lead (IRFU1205) Fast Switching Fully Avalanche Rated D VDSS = 55V G S RDS(on) ...Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig ...
Description Power MOSFET(Vdss=55V, Rds(on)=0.027ohm, Id=44A?
Power MOSFET(Vdss=55V, Rds(on)=0.027ohm, Id=44A)
Power MOSFET(Vdss=55V, Rds(on)=0.027ohm, Id=44A?)

File Size 140.62K  /  10 Page

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    IPL60R360P6S

Infineon Technologies AG
Infineon Technologies A...
Part No. IPL60R360P6S
OCR Text ...rificingeaseofuse.extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lightera...curent i gss - - 100 na v gs =20v, v ds =0v drain-source on-state resistance r ds(on) - - 0.32 0.84...
Description IGBT Modules
Very high commutation ruggedness

File Size 1,345.05K  /  14 Page

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    IRFZ34E

IRF[International Rectifier]
Part No. IRFZ34E
OCR Text Low On-Resistance l Dynamic dv/dt Rating l 175C Operating Temperature l Fast Switching l Ease of Paralleling Description l l D VDSS =...Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig ...
Description N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管)

File Size 116.70K  /  8 Page

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    IRLML5103 IRLML5103PBF IRLML5103TR

IRF[International Rectifier]
Part No. IRLML5103 IRLML5103PBF IRLML5103TR
OCR Text Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching D G S RDS(on) = ...Curent Body Diode Forward Drop Ripple 5% [ISD] *** VGS = 5.0V for Logic Level and 3V...
Description -30V Single P-Channel HEXFET Power MOSFET in a Micro 3 package
Power MOSFET(Vdss=-30V, Rds(on)=0.60ohm)

File Size 190.06K  /  9 Page

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    IRLMS1503

International Rectifier
Part No. IRLMS1503
OCR Text Low RDS(on) N-Channel MOSFET D D G 1 6 A D D S VDSS = 30V 2 5 3 4 Description Fifth Generation HEXFET(R) powe...Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig ...
Description 30V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package

File Size 175.92K  /  8 Page

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    IRLMS1902 IRLMS1902TR

International Rectifier
Part No. IRLMS1902 IRLMS1902TR
OCR Text Low RDS(on) N-Channel MOSFET D D G 1 6 A D D S VDSS = 20V 2 5 3 4 Description Fifth Generation HEXFET(R) powe...Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig ...
Description 20V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package

File Size 183.10K  /  8 Page

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