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  lateral Datasheet PDF File

For lateral Found Datasheets File :: 1948    Search Time::1.781ms    
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    FDC645N FDC645

FAIRCHILD[Fairchild Semiconductor]
Part No. FDC645N FDC645
OCR Text ...EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). 20 deg maximum Typical component cavity center line 0.5mm maximum B0 20 deg maximum component rotation 0.5mm maximum Sketch A (Side or Fr...
Description N-Channel PowerTrench MOSFET

File Size 305.15K  /  8 Page

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    FDS3580

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS3580
OCR Text ...EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). 20 deg maximum Typical component cavity center line 0.5mm maximum B0 20 deg maximum component rotation 0.5mm maximum Sketch A (Side or Fr...
Description 80V N-Channel PowerTrenchTM MOSFET

File Size 200.30K  /  8 Page

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    L4947R L4947

STMicroelectronics N.V.
Part No. L4947R L4947
OCR Text ...functions. The power stage is a lateral PNP transistor which allows a very low dropout voltage (typ. 400mV at TJ = 25C, max. 750mV over the full temperature range @ IO = 500mA). The typical curve of the dropout voltage as a function of the ...
Description 5V-0.5A VERY LOW DROP REGULATOR WITH RESET 5V 0.5A的非常低,复位降调节

File Size 56.78K  /  6 Page

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    FDD6030L FDD6030

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. FDD6030L FDD6030
OCR Text ...EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). 10 deg maximum Typical component cavity center line 0.9mm maximum B0 10 deg maximum component rotation 0.9mm maximum Sketch A (Side or Fr...
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor 50 A, 30 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252

File Size 167.82K  /  6 Page

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    Freescale (Motorola)
Part No. MRF9060MR1
OCR Text ... n ? channel enhancement ? mode lateral mosfets designed for broadband commercial and industrial applications with frequen- cies up to 1000 mhz. the high gain and broadband performance of these devices make them ideal for large ? signal, c...
Description 945 MHz, 60 W, 26 V lateral N–Channel Broadband RF Power MOSFET

File Size 263.40K  /  12 Page

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    MRF6S21100HR3 MRF6S21100HSR3

Freescale (Motorola)
Freescale Semiconductor, Inc
Part No. MRF6S21100HR3 MRF6S21100HSR3
OCR Text ... N - Channel Enhancement - Mode lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B ...
Description 2170 MHz, 23 W Avg., 28 V, 2 x W–CDMA lateral N–Channel RF Power MOSFET
RF Power Field Effect Transistors N-Channel Enhancement-Mode lateral MOSFETs

File Size 428.53K  /  12 Page

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    Motorola
Part No. MRF6S21100H MOTOROLAINC-MRF6S21100HSR3
OCR Text ... N - Channel Enhancement - Mode lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B ...
Description 2170 MHz, 23 W Avg., 28 V, 2 x W?CDMA lateral N?Channel RF Power MOSFET 

File Size 406.27K  /  12 Page

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    Freescale Semiconductors
Part No. MRF6S21100NBR1 MRF6S21100N
OCR Text ... N - Channel Enhancement - Mode lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f...
Description  Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz

File Size 510.14K  /  12 Page

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    MRF9085 MRF9085LR3 MRF9085LSR3

Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MRF9085 MRF9085LR3 MRF9085LSR3
OCR Text ... N - Channel Enhancement - Mode lateral MOSFETs MRF9085LR3 MRF9085LSR3 880 MHz, 90 W, 26 V lateral N - CHANNEL RF POWER MOSFETs Freescale Semiconductor, Inc... CASE 465 - 06, STYLE 1 NI - 780 MRF9085LR3 CASE 465A - 06, STYLE 1 ...
Description 128K 3.3 VOLT SERIAL CONFIGURATION PROM
880 MHz, 90 W, 26 V lateral N-CHANNEL RF POWER MOSFETs

File Size 487.99K  /  8 Page

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    SD5400 SD5001 SD5401 SD5401CY SD5000 SD5000I SD5000N SD5001N SD5400CY

LINEAR[Linear Integrated Systems]
Part No. SD5400 SD5001 SD5401 SD5401CY SD5000 SD5000I SD5000N SD5001N SD5400CY
OCR Text lateral DMOS SWITCH ZENER PROTECTED Product Summary Features * Quad SPST Switch with Zener Input Protection * Low Interelectrode Capacitance and Leakage * Ultra-High Speed Switching--tON: 1 ns * Ultra-Low Reverse Capacitance: 0.2 pF ...
Description QUAD N-CHANNEL lateral DMOS SWITCH ZENER PROTECTED

File Size 501.15K  /  3 Page

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For lateral Found Datasheets File :: 1948    Search Time::1.781ms    
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