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				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4D64163HF K4D64163HF-TC60 K4D64163HF-TC33 K4D64163HF-TC36 K4D64163HF-TC40 K4D64163HF-TC50
OCR Text	... 8) -. Burst type (sequential & interleave) * All inputs except data & DM are sampled at the positive going edge of the system clock * Differential clock input * No Wrtie-Interrupted by Read Function * 2 DQS's ( 1DQS / Byte ) 64M DDR SDR...
Description	From old datasheet system 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
File Size	158.98K / 16 Page	View it Online	Download Datasheet

				Siemens
Part No.	HYB39S64400AT-8 HYB39S64400AT-8B HYB39S64160ATL-10 HYB39S64160ATL-8 HYB39S64160ATL-8B HYB39S64400ATL-8 HYB39S64400ATL-8B HYB39S64800ATL-10 HYB39S64800ATL-8 HYB39S64800ATL-8B
OCR Text	...ing the four memory banks in an interleave fashion allows random access operation to occur at higher rate than is possible with standard drams. a sequential and gapless data rate is possible depending on burst length, cas latency and speed...
Description	64 MBit Synchronous DRAM 64Mbit Synchronous DRAM
File Size	679.38K / 53 Page	View it Online	Download Datasheet

				CONSUMER MICROCIRCUITS LIMITED
Part No.	MX909A
OCR Text	...240 bits data block 32 240 bits interleave / de-interleave scramble / de-scramble data block 1 240 bits bit sync 16 bits frame sync 16 bits control bytes 16 bits fec 8 bits 7 byte frame head, always present data blocks, w hen present over a...
Description	High Speed Formatted GMSK Mobitex compatible Modem with Intelligent Interface
File Size	40.37K / 6 Page	View it Online	Download Datasheet

				Infineon Technologies A...
Part No.	HYB39S64400CT-7.5 HYB39S64800CT-7.5 HYB39S64800CTL-8 HYB39S64400CT-8 HYB39S64800CT-8
OCR Text	...ing the four memory banks in an interleave fashion allows random access operation to occur at higher rate than is possible with standard drams. a sequential and gapless data rate is possible depending on burst length, cas latency and speed...
Description	64M SDRAM Component 64-MBit Synchronous DRAM
File Size	399.42K / 52 Page	View it Online	Download Datasheet

				Winbond Electronics
Part No.	W981616BH
OCR Text	...e burst length, latency cycle, interleave or sequential burst to maximize its performance. w981616bh is ideal for ma in memory in high performance applications. features 3.3v 0.3v power supply up to 166 mhz clock frequency ...
Description	SDRAM 1Mx16 512K ′ 2 BANKS ′ 16 BITS SDRAM
File Size	1,017.01K / 40 Page	View it Online	Download Datasheet

				ICSI[Integrated Circuit Solution Inc]
Part No.	IC43R16160 IC43R16160-5T IC43R16160-6T IC43R16160-7TG IC43R16160-5TG IC43R16160-6TG IC43R16160-7T
OCR Text	...le Wrap Sequence: Sequential or interleave Programmable Burst Length: 2, 4, 8 for Sequential Type 2, 4, 8 for interleave Type Automatic and Controlled Precharge Command Power Down Mode Auto Refresh and Self Refresh Refresh Interval: 81...
Description	DYNAMIC RAM, DDR 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM
File Size	1,326.80K / 56 Page	View it Online	Download Datasheet

				Cirrus Logic
Part No.	CDB5012
OCR Text	...lar/bipolar input range burst & interleave calibration modes continuous conversion adjustable voltage reference serial data and clock bnc connections operation from internally-generated or externally-supplied master clock general desc...
Description	(CDB5012 - CDB5016) Evaluation Board
File Size	109.37K / 7 Page	View it Online	Download Datasheet

				Siemens Semiconductor Group Infineon
Part No.	HYB39S16160CT-7 HYB39S16160CT-6
OCR Text	...e Wrap Sequence : Sequential or interleave Programmable Burst Length: 1, 2, 4, 8 * * * * * * The HYB39S16160CT-6/-7 are high speed dual bank Synchronous DRAM's based on SIEMENS 0.25m process and organized as 2 banks x 512kbit x 16. Th...
Description	1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications
File Size	138.03K / 15 Page	View it Online	Download Datasheet

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