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  dv dt Datasheet PDF File

For dv dt Found Datasheets File :: 35621    Search Time::6.422ms    
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    Z0405MF Z0405MF0AA2 Z0405MF1AA2 Z0405NF Z0405NF0AA2 Z0405NF1AA2 Z0405SF Z0405SF0AA2 Z0405SF1AA2 Z0409MF Z0409MF0AA2 Z040

STMicroelectronics
ST Microelectronics
SGS Thomson Microelectronics
Part No. Z0405MF Z0405MF0AA2 Z0405MF1AA2 Z0405NF Z0405NF0AA2 Z0405NF1AA2 Z0405SF Z0405SF0AA2 Z0405SF1AA2 Z0409MF Z0409MF0AA2 Z0409MF1AA2 Z0409SF Z0409SF0AA2 Z0409SF1AA2 Z0410MF Z0410MF0AA2 Z0410MF1AA2 Z0402MF0AA2 Z0402NF0AA2 Z0402SF0AA2 Z0402MF0 Z0409NF Z0409NF1AA2 Z0409NF0AA2 Z0402SF Z0402SF1AA2 Z0402NF1AA2 Z0410NF0AA2 Z0402MF1AA2 Z0410 Z0410NF1AA2 Z0410SF1AA2 Z0410SF0AA2
OCR Text ...nt 02 IGT (1) VGT VGD IH (2) IL dv/dt (2) (dv/dt)c (2) VD = 12 V VD = VDRM IT = 50 mA IG = 1.2 IGT I - III - IV II VD = 67 %VDRM gate open Tj = 110C (dI/dt)c = 1.8 A/ms Tj = 110C MIN. MIN. RL = 30 RL = 3.3 k Tj = 125C ALL ALL ALL MAX. MAX....
Description 4A TRIACS
From old datasheet system
Triacs, 4A, 700V, sensitivity 25mA
Triacs, 4A, 600V, sensitivity 25mA

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    Shenzhen Winsemi Microelectronics Co., Ltd
Part No. WFU5N60
OCR Text ... avalanche energy (note1) 12 mj dv/dt peak diode recovery dv /dt (note3) 4.5 v/ns p d total power dissipation(@tc=25 ) 51 w derating factor above 25 0. 39 w/ t j ,t stg junction and storage temperature -55~150 t l channel temperature 30...
Description Silicon N-Channel MOSFET

File Size 495.11K  /  7 Page

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    Shenzhen Winsemi Microelectronics Co., Ltd
Part No. WFU5N60B
OCR Text ... avalanche energy (note1) 10 mj dv/dt peak diode recovery dv /dt (note3) 4.5 v/ns p d total power dissipation(@tc=25 ) 50 w derating factor above 25 0.23 w/ t j junction temperature 150 t stg storage temperature -55~150 t l channel tem...
Description Silicon N-Channel MOSFET

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    IRFW640BTMFP001

Fairchild Semiconductor
Part No. IRFW640BTMFP001
OCR Text ...00% avalanche tested ? improved dv/dt capability absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics symbol parameter irfw640b / irfi640b units v dss drain-source voltage 200 v i d drain current - cont...
Description 200V N-Channel B-FET / Substitute of IRFW640A

File Size 701.79K  /  9 Page

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    Shenzhen Winsemi Microelectronics Co., Ltd
Part No. WFU2N60
OCR Text ...avalanche energy (note1) 5.4 mj dv/dt peak diode recovery dv /dt (note3) 4.5 v/ ns p d total power dissipation(@tc=25 ) 46 w derating factor above 25 0.35 w/ t j ,t stg junction and storage temperature -55~150 t l channel temperature 30...
Description Silicon N-Channel MOSFET

File Size 555.97K  /  7 Page

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    Shenzhen Winsemi Microelectronics Co., Ltd
Part No. WFU1N60
OCR Text ...avalanche energy (note1) 3.9 mj dv/dt peak diode recovery dv /dt (note3) 5.5 v/ ns p d total power dissipation(@tc=25 ) 32 w derating factor above 25 0.24 w/ t j ,t stg junction and storage temperature -55~150 t l maximum lead temperatu...
Description Silicon N-Channel MOSFET

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    TSM15N50CI TSM15N50CZ

Taiwan Semiconductor Company, Ltd
Part No. TSM15N50CI TSM15N50CZ
OCR Text ...pical @ 39nc (typ.) improve dv/dt capability block diagram n-channel mosfet ordering information part no. package packing tsm15n50cz c0 to-220 50pcs / tube tsm15n50ci c0 ito-220 50pcs / tube absolute maximum rating ...
Description 500V N-Channel Power MOSFET

File Size 394.76K  /  10 Page

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    ST Microelectronics
Part No. STE70NM60
OCR Text ...ical r ds (on) = 0.050 w high dv/dt and avalanche capabilities improved esd capability low input capacitance and gate charge low gate input resistance tight process control industrys lowest on-resistance description the mdmesh? ...
Description N-channel Power MOSFET

File Size 245.73K  /  8 Page

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    SIHG25N40D

Vishay Siliconix
Part No. SIHG25N40D
OCR Text ...urce voltage slope t j = 125 c dv/dt 24 v/ns reverse diode dv/dtd 0.6 soldering recommendations (peak temperature) for 10 s 300 c c sihg25n40d www.vishay.com vishay siliconix s12-0625-rev. b, 26-mar-12 2 document number: 91484 for tec...
Description D Series Power MOSFET

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    CD471290A CD420890A CD421690A CD471690A CD4290A CD421290A CD470890A

http://
POWEREX[Powerex Power Semiconductors]
Powerex Power Semicondu...
Part No. CD471290A CD420890A CD421690A CD471690A CD4290A CD421290A CD470890A
OCR Text ... B Ln I +C I + D Sqrt I Minimum dv/dt Turn-Off Time (Typical) dv/dt t off Linear to 2/3 VDRM Tj=125C, Gate Open Circuit TJ = 25C, IT = 2A Vr = 50V, -dI/dt=10 A/s Re-Applied dv/dt = 200 V/s, Linear to 900 V Tj= -40C, VD=6V, Resistive Load Tj...
Description    POW-R-BLOK Dual SCR/Diode Isolated Module 90 Amperes / Up to 1600 Volts

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For dv dt Found Datasheets File :: 35621    Search Time::6.422ms    
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