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  drive cutoff Datasheet PDF File

For drive cutoff Found Datasheets File :: 6525    Search Time::2ms    
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    2SJ517

HITACHI[Hitachi Semiconductor]
Part No. 2SJ517
OCR Text .... (at V GS =-4V, ID =-1A) * Low drive current * High speed switching * 2.5V gate drive devices. Outline UPAK 3 D 2 1 4 G ...cutoff voltage Static drain to source on state resistance Static drain to source on state resistance...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 42.79K  /  8 Page

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    2SJ518

HITACHI[Hitachi Semiconductor]
Part No. 2SJ518
OCR Text ...t (V GS = -10V, ID = -1A) * Low drive current * 4 V gete drive devices * High speed switching Outline UPAK 3 D 2 1 4 G ...cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacita...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 46.74K  /  9 Page

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    2SJ520 2SJ520TP-FA

Sanyo Semicon Device
Sanyo Electric Co., Ltd.
Part No. 2SJ520 2SJ520TP-FA
OCR Text ...es * Low ON resistance. * 2.5V drive. Package Dimensions unit:mm 2083B [2SJ520] 6.5 5.0 4 1.5 2.3 0.5 0.85 0.7 5.5 ...cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacita...
Description P-Channel Silicon MOSFET Load Switching Applications
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated &#181;P Reset 晶体管| MOSFET的| P通道| 20V的五(巴西)直| 10A条(丁)|52VAR

File Size 43.24K  /  4 Page

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    2SJ526

HITACHI[Hitachi Semiconductor]
Part No. 2SJ526
OCR Text ...nce R DS(on) = 0.11 typ. * Low drive current * 4 V gete drive devices * High speed switching Outline TO-220FM D G 12 S 1. G...cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacita...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 50.48K  /  9 Page

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    2SJ527 2SJ527L 2SJ527S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ527 2SJ527L 2SJ527S
OCR Text ...ance R DS(on) = 0.3 typ. * Low drive current * 4 V gete drive devices * High speed switching Outline DPAK-1 4 4 D 12 G 3 S ...cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacita...
Description    Silicon P Channel MOS FET High Speed Power Switching

File Size 53.03K  /  9 Page

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    2SJ528 2SJ528L 2SJ528S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ528 2SJ528L 2SJ528S
OCR Text ...RDS(on) = 0.17 typ. * 4 V gete drive devices * High speed switching Outline DPAK-2 4 D 4 12 G 3 12 S 3 1. Gate 2. ...cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacita...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching

File Size 52.33K  /  9 Page

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    2SJ529 2SJ529L 2SJ529S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ529 2SJ529L 2SJ529S
OCR Text ... DS(on) = 0.12 typ. * 4 V gete drive devices * High speed switching Outline DPAK-2 4 D 4 12 G 3 12 S 3 1. Gate 2. ...cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacita...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching

File Size 51.89K  /  9 Page

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    2SJ530 2SJ530L 2SJ530S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ530 2SJ530L 2SJ530S
OCR Text ... R DS(on) = 0.08 typ. * 4V gate drive devices. * High speed switching. Outline DPAK-2 4 D 4 12 G 3 12 S 3 1. Gate 2...cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacita...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 56.07K  /  9 Page

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    2SJ531

HITACHI[Hitachi Semiconductor]
Part No. 2SJ531
OCR Text ...nce R DS(on) = 0.050 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220CFM D G 12 3 ...cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacita...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 49.99K  /  9 Page

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    2SJ532

HITACHI[Hitachi Semiconductor]
Part No. 2SJ532
OCR Text ...nce R DS(on) = 0.042 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220CFM D G 12 S ...cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacita...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 50.69K  /  9 Page

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For drive cutoff Found Datasheets File :: 6525    Search Time::2ms    
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