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  d-100a Datasheet PDF File

For d-100a Found Datasheets File :: 24564    Search Time::1.454ms    
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    APT4016BVFR APT4016BVFRG APT4016SVFR APT4016SVFRG

Advanced Power Technology
Part No. APT4016BVFR APT4016BVFRG APT4016SVFR APT4016SVFRG
OCR Text ...47 or Surface Mount D3Pak G D S All Ratings: TC = 25C unless otherwise specified. APT4016B_SVFR(G) UNIT Volts Amps 400 27 108 ...100A/s) Reverse Recovery Charge (IS = -27A, di/dt = 100A/s) Peak Recovery Current (IS = -27A, di/dt ...
Description POWER MOS V FREDFET

File Size 68.73K  /  4 Page

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    APT5024BFLL05 APT5024SFLL APT5024BFLL

ADPOW[Advanced Power Technology]
Part No. APT5024BFLL05 APT5024SFLL APT5024BFLL
OCR Text ...e * FAST RECOVERY BODY DIODE D G S All Ratings: TC = 25C unless otherwise specified. APT5024BFLL_SFLL UNIT Volts Amps 500 22 88 30...100A/s) Reverse Recovery Charge (IS = -ID 22A, di/dt = 100A/s) Peak Recovery Current (IS = -ID 22A, ...
Description POWER MOS 7 FREDFET

File Size 159.44K  /  5 Page

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    IXGK120N120A3 IXGX120N120A3

IXYS Corporation
Part No. IXGK120N120A3 IXGX120N120A3
OCR Text ...ulse Test, t 300s, Duty Cycle, d 2%. 2. Switching Times may Increase for VCE (Clamp) > 0.8 VCES, Higher TJ or Increased RG. Terminals: ...100A 20 16 12 8 4 on 12 10 8 6 4 2 100 - MilliJoules RG - Ohms IC - Amperes Fig. 14. ...
Description GenX3 A3-Class IGBTs

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    ICSSSTVA16859B ICSSSTVA16859BG-T ICSSSTVA16859BGLF-T ICSSSTVA16859BK-T ICSSSTVA16859BKLF-T

Integrated Circuit Systems
Part No. ICSSSTVA16859B ICSSSTVA16859BG-T ICSSSTVA16859BGLF-T ICSSSTVA16859BK-T ICSSSTVA16859BKLF-T
OCR Text ...r H CLK# X or Floating L or H D X or Floating H L X Q Outputs Q L H L Q0(2) 64-Pin TSSOP 6.10 mm. Body, 0.50 mm. pitch Q8A VDDQ Q9A Q...100A IOH = -8mA IOL = 100A IOL = 8mA VI = VDD or GND RESET# = GND VI = VIH(AC) or VIL(AC), RESET# = ...
Description DDR 13-Bit to 26-Bit Registered Buffer

File Size 122.87K  /  10 Page

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    BUK452-100B BUK452-100A

NXP Semiconductors N.V.
Philips Semiconductors
Part No. BUK452-100B BUK452-100A
OCR Text ...N CONFIGURATION tab SYMBOL d g 1 23 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC ...100A 11 7.7 44 60 175 175 MAX. 100 100 30 -100B 10 7 40 UNIT V V V A A A W C C THERMAL RESISTANCE...
Description PowerMOS transistor 11 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 51.94K  /  7 Page

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    AO6603 AO6603L

Alpha & Omega Semicondu...
Alpha & Omega Semiconductors
Part No. AO6603 AO6603L
OCR Text ...A VGS=4.5V, V DS=5V VGS=4.5V, I D=1.7A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=2.5V, I D=1A VGS=1.8V, I D=0.7A gFS VSD IS Forw...100A/s IF=1A, dI/dt=100A/s 4 15.5 2.4 6.7 1.6 16 4 8.1 125 225 315 290 425 0.55 Min 20 1 5 25 0.8 Ty...
Description Complementary Enhancement Mode Field Effect Transistor

File Size 274.03K  /  7 Page

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    AO4601 AO4601L

Alpha & Omega Semiconductors
Part No. AO4601 AO4601L
OCR Text ... lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. Thes...100A/s 7 25.2 12 32 26 19 25 18 -2.5 Min -30 -1 -5 100 -3 Typ Max Units V A nA V A m m m S V A pF pF...
Description Complementary Enhancement Mode Field Effect Transistor

File Size 300.13K  /  7 Page

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    AO4600L AO4600

Alpha & Omega Semiconductors
Part No. AO4600L AO4600
OCR Text ...o lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. Thes...100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/s 2 ...
Description Complementary Enhancement Mode Field Effect Transistor

File Size 263.38K  /  7 Page

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Part No. MICROSEMIPOWERPRODUCTSGROUP-APT5020BVFRG
OCR Text d = 250 m a) on state drain current 2 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v ...100a/ m s) reverse recovery charge (i s = -i d [cont.], di / dt = 100a/ m s) peak recovery curre...
Description

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