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Shenzhen Luguang Electronic Technology Co., Ltd
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| Part No. |
SS510 SS52 SS55 SS58
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| OCR Text |
...verage f o rward rec t i f ied curren t ,amperes peak f o rward surge curren t ,amperes ins t an t a neous f o rward curren t ,amperes ins t an t a neous reverse curren t ,micr o amperes nu m be r o f c y c l e s a t 6 0 h z ... |
| Description |
Surface Mount Schottky Barrier Rectifiers
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| File Size |
226.88K /
2 Page |
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it Online |
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Shenzhen Luguang Electronic Technology Co., Ltd Shenzhen Luguang Electr...
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| Part No. |
SS520 SS55
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| OCR Text |
...verage f o rward rec t i f ied curren t ,amperes peak f o rward surge curren t ,amperes ins t an t a neous f o rward curren t ,amperes ins t an t a neous reverse curren t ,micr o amperes nu m be r o f c y c l e s a t 6 0 h z ... |
| Description |
Surface Mount Schottky Barrier Rectifiers
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| File Size |
284.88K /
2 Page |
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it Online |
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Shenzhen Winsemi Microelectronics Co., Ltd
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| Part No. |
STN1A60S
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| OCR Text |
...60 0 v t ( r m s ) f or w a r d curren t r m s ( a ll condu ct i o n a ng l e s , t l = 50 ) 1 a i t s m p ea k f or w a r d s urg e curren t , ( f u ll cy c l e , s i n e w ave , 50 / 6 0 hz ) 9 . 1 / 1 0 a i 2 t c i r c u it f u s i n g ... |
| Description |
Logic Level Bi-Directional Triode Thyristor
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| File Size |
363.63K /
5 Page |
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it Online |
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Shenzhen Winsemi Microelectronics Co., Ltd
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| Part No. |
STN1A60
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| OCR Text |
...60 0 v t ( r m s ) f or w a r d curren t r m s ( a ll condu ct i o n a ng l e s , t l = 50 ) 1 a i t s m p ea k f or w a r d s urg e curren t , ( f u ll cy c l e , s i n e w ave , 50 / 6 0 hz ) 9 . 1 / 1 0 a i 2 t c i r c u it f u s i n g ... |
| Description |
Logic Level Bi-Directional Triode Thyristor
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| File Size |
348.59K /
5 Page |
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it Online |
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Shenzhen Winsemi Microelectronics Co., Ltd
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| Part No. |
WFD2N60
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| OCR Text |
...0 0 v i d con t i nuou s dra in curren t ( @ t c = 25 ) 2 . 0 a con t i nuou s dra in curren t ( @ t c = 100 ) 1 . 3 a i dm dra in curren t p u l se d (no t e1 ) 6 . 0 a v g s g a t e t o s our c e v o l tag e 3 0 v e a s s i ng le p u l... |
| Description |
Silicon N-Channel MOSFET
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| File Size |
501.64K /
7 Page |
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it Online |
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Shenzhen Winsemi Microelectronics Co., Ltd
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| Part No. |
WFP70N06
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| OCR Text |
...6 0 v i d con t i nuou s dra in curren t ( @ t c = 25 ) 7 0 a con t i nuou s dra in curren t ( @ t c = 100 ) 5 1 a i dm dra in curren t p u l se d (no t e1 ) 28 0 a v g s g a t e t o s our c e v o l tag e 2 5 v e a s s i ng le p u l se d... |
| Description |
Silicon N-Channel MOSFET
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| File Size |
514.78K /
7 Page |
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it Online |
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POLYFET[Polyfet RF Devices]
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| Part No. |
P123
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| OCR Text |
...reakdown Voltag Zero Bias Drain curren Gate Leakage curren Gate Bias for Drain curren Forward Transconductanc Saturation Resistanc Saturation curren Common Source Input Capacitanc Common Source Feedback Capacitanc Common Source Output Capac... |
| Description |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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| File Size |
37.97K /
2 Page |
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it Online |
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