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SDR625CT 9N60C SD166 1N4068A 0PFTN 16C55 P1003 MC729G2
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  con.c 2 Datasheet PDF File

For con.c 2 Found Datasheets File :: 17074    Search Time::1.453ms    
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    STP40NF03L P40NF03L

意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STP40NF03L P40NF03L
OCR Text ...n-source Breakdown Voltage Test Con ditions I D = 250 A V GS = 0 Min. 30 1 10 100 Typ. Max. Unit V A A nA V DS = Max Rating Zero Gate Vo...c =125 oC ON () Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS ...
Description Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:150uF; Capacitance
N-CHANNEL POWER MOSFET
N - CHANNEL 30V - 0.020 ohm - 40A TO-220 STripFET POWER MOSFET

File Size 80.96K  /  8 Page

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    STP50NE10L 6037

STMICROELECTRONICS[STMicroelectronics]
Part No. STP50NE10L 6037
OCR Text ...n-source Breakdown Voltage Test Con ditions I D = 250 A V GS = 0 Min. 100 1 10 100 Typ. Max. Unit V A A nA V DS = Max Rating Zero Gate V...c = 125 oC ON () Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS...
Description From old datasheet system
N - CHANNEL 100V - 0.020ohm - 50A TO-220 STripFET POWER MOSFET

File Size 85.74K  /  8 Page

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    STP50NE10 6035

STMICROELECTRONICS[STMicroelectronics]
Part No. STP50NE10 6035
OCR Text ...n-source Breakdown Voltage Test Con ditions I D = 250 A V GS = 0 Min. 100 1 10 100 Typ. Max. Unit V A A nA V DS = Max Rating Zero Gate V...c = 125 oC ON () Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS...
Description N-channel 100V - 0.021 - 50A TO-220 STripFET Power MOSFET
N - CHANNEL 100V - 0.021ohm - 50A TO-220 STripFET POWER MOSFET
From old datasheet system
N-channel 100V - 0.021з - 50A TO-220 STripFET⑩ Power MOSFET

File Size 85.29K  /  8 Page

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    STP5NB60 STP5NB60FP 6767

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STP5NB60 STP5NB60FP 6767
OCR Text ...n-source Breakdown Voltage Test Con ditions I D = 250 A V GS = 0 Min. 600 1 50 100 T yp. Max. Unit V A A nA Zero G ate Voltage V DS = Ma...c = 125 oC ON () Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS...
Description N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET
N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET
N - CHANNEL 600V - 1.8 - 5A - TO-220/TO-220FP PowerMESH TM MOSFET
From old datasheet system

File Size 106.93K  /  9 Page

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    STP5NB80 STP5NB80FP 6418

STMICROELECTRONICS[STMicroelectronics]
Part No. STP5NB80 STP5NB80FP 6418
OCR Text ...n-source Breakdown Voltage Test Con ditions I D = 250 A V GS = 0 Min. 800 1 50 100 T yp. Max. Unit V A A nA Zero G ate Voltage V DS = Ma...c = 125 oC ON () Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS...
Description From old datasheet system
N - CHANNEL 800V - 1.8W - 5A - TO-220/TO-220FP PowerMESH] MOSFET
N - CHANNEL 800V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET

File Size 106.52K  /  9 Page

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    STP5NB90 STP5NB90FP 6166 5NB90 STP5NA90

STMICROELECTRONICS[STMicroelectronics]
意法半导
ST Microelectronics
STMicroelectronics N.V.
Part No. STP5NB90 STP5NB90FP 6166 5NB90 STP5NA90
OCR Text ...n-source Breakdown Voltage Test Con ditions I D = 250 A V GS = 0 Min. 900 1 50 100 T yp. Max. Unit V A A nA V DS = Max Rating Zero G ate...c = 125 C o ON () Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = ...
Description N-CHANNEL 900V - 2.3 OHM - 5A - TO-220/TO-220FP
From old datasheet system
ZENER DIODES
N - CHANNEL PowerMESH MOSFET
N - CHANNEL 900V - 2.3 ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET -频道900V - 2.3欧姆- 5A TO-220/TO-220FP PowerMESH MOSFET

File Size 45.04K  /  6 Page

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    STP60NE03L-12 6077

ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
Part No. STP60NE03L-12 6077
OCR Text ...n-source Breakdown Voltage Test Con ditions I D = 250 A V GS = 0 Min. 30 1 10 100 Typ. Max. Unit V A A nA V DS = Max Rating Zero Gate Vo...c = 125 oC ON () Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS...
Description N-CHANNEL Power MOSFET
N - CHANNEL 30V - 0.009 ohm - 60A - T0-220 STripFET POWER MOSFET -通道30V 0.009欧姆-0A T0 220 STripFET功率MOSFET
From old datasheet system
N - CHANNEL 30V - 0.009 - 60A - T0-220 STripFET TM POWER MOSFET
N - CHANNEL 30V - 0.009 Ohms - 60A - T0-220 STripFET POWER MOSFET

File Size 84.41K  /  8 Page

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    TH63 TH64

List of Unclassifed Manufacturers
Matsushita Electric Works(Nais)
ETC[ETC]
Electronic Theatre Controls, Inc.
Part No. TH63 TH64
OCR Text CONTAORE MINIATURIZZATO TH63*TH64 57.5 2.264 24 .945 48 1.890 mm TH64 (con reset) 1. Formato compatto 48 x 24 mm 2. Con...c'e bisogno di staccare la molla di montagigo dal contaore). Se il pannello ha uno spessore da 5 a 9...
Description CONTAORE MINIATURIZZATO
MINIATURE POWER RELAY

File Size 42.65K  /  2 Page

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    TIP31A TIP32C TIP31C TIP32A TIP32B

STMICROELECTRONICS[STMicroelectronics]
Part No. TIP31A TIP32C TIP31C TIP32A TIP32B
OCR Text ... Cut-off Current (I C = 0) Test Con ditions for T IP31A/32A for T IP31C/32B/32C for T IP31A/32A for T IP/ 32B for T IP31C/32C V EB = 5 V I C = 30 mA for TIP31A/32A for TIP32B for TIP31C/32C IC = 3 A IC = 3 A IC = 1 A IC = 3 A I C = 0.5 A I ...
Description COMPLEMENTARY SILICON POWER TRANSISTORS

File Size 63.73K  /  5 Page

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    TJA1010 TJA1010T

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. TJA1010 TJA1010T
OCR Text ... VI(STBY) Vo(STAT) Vo(SO) Io Io(con) Iclamp(rep) Eclamp(rep) Eclamp(nrep) Tvj Tstg Vesd PARAMETER supply voltage input voltage at pins SI, S...C Tj = 95 C repetitive inductive turn-off current per Tj = 135 C; note 1 output repetitive inductive...
Description Octal Low Side Driver OLSD

File Size 105.29K  /  16 Page

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For con.c 2 Found Datasheets File :: 17074    Search Time::1.453ms    
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