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				MicrochipTechnology Microchip Technology Inc. MICROCHIP[Microchip Technology]
Part No.	24C04A 24C04A-SN 24C04A-EP 24C04A-ESL 24C04A-ESM 24C04A-ESN 24C04A-P 24C04A-SL 24C04A-SM 24C04AP
OCR Text	...) of the falling edge of SCL to avoid unintended generation of START or STOP conditions. 2: This parameter is not tested but guaranteed by characterization. For endurance estimates in a specific application, please consult the Total Enduran...
Description	1K/2K/4K5.0VI2COSerialEEPROMs IC 4K 5.0V I 2 C ⑩ Serial EEPROM 4K 5.0V I 2 C Serial EEPROM 4K 5.0V I 2 C ?Serial EEPROM
File Size	98.21K / 12 Page	View it Online	Download Datasheet

				http:// Microchip Technology, Inc. Microchip Technology Inc. MicrochipTechnology MICROCHIP[Microchip Technology]
Part No.	24C08B 24C08B-EP 24C08B-ESL 24C08B-ESN 24C16B 24C16B-EP 24C16B-ESL 24C16B-ESN 24C08
OCR Text	...) of the falling edge of SCL to avoid unintended generation of START or STOP conditions. 3: The combined TSP and VHYS specifications are due to new Schmitt trigger inputs which provide improved noise and spike suppression. This eliminates t...
Description	The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS DIODE ZENER 5.1V 120MW SSSMINI2 8K/16K5.0VI2COSerialEEPROMs 8K/16K 5.0V I 2 C O Serial EEPROMs
File Size	69.77K / 12 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR ST25C16B6TR ST25C16M1TR ST25C16M3TR ST25C16M5TR ST25C16M6TR ST24C16 ST24C16B1TR ST24C16B3TR ST24C16B5TR ST24C16B6TR ST24C16M1TR ST24C16M3TR ST24C16M5TR ST24C16M6TR ST24W16 ST24W16B1TR ST24W16B3TR ST24W16B5TR ST24W16B6TR ST24W16M1TR ST24W16M3TR ST24W16M5TR ST24W16M6TR ST25W16 ST25W16B1TR ST25W16B3TR ST25W16B5TR ST25W16B6TR ST25W16M1TR ST25W16M3TR ST25W16M5TR ST25W16M6TR
OCR Text	...A away from SCL = 1 in order to avoid unwanted START and/or STOP conditions. 3. In the Multibyte Write mode only, if accessed bytes are on two consecutive 8 bytes rows (5 address MSB are not constant) the maximum programming time is doubled...
Description	MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护 MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No MOSFET, DUAL, PP, POWERPAK; Transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes (ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16/8/4/2/1KbitSerialICBusEEPROM
File Size	125.39K / 17 Page	View it Online	Download Datasheet

				MICROCHIP[Microchip Technology]
Part No.	24C64 24LC64 24LC64-EP 24LC64-ESM 24LC64-ESN 24LC64-EST 24LC64-IP 24LC64-ISM 24LC64-ISN 24LC64-IST 21189B 24AA64-EP 24AA64 24AA64-ESM 24AA64-ESN 24AA64-EST 24AA64-IP 24AA64-ISM 24AA64-ISN 24AA64-IST
OCR Text	...) of the falling edge of SCL to avoid unintended generation of START or STOP conditions. The combined TSP and VHYS specifications are due to new Schmitt trigger inputs which provide improved noise spike suppression. This eliminates the need...
Description	64K I 2 C ⑩ CMOS Serial EEPROM From old datasheet system 64K I 2 C CMOS Serial EEPROM
File Size	121.87K / 12 Page	View it Online	Download Datasheet

				Microchip Technology, Inc. Microchip Technology Inc. MicrochipTechnology MICROCHIP[Microchip Technology]
Part No.	24FC32 24FC32-IP 24FC32-ISM 24FC32-P 24FC32-SM
OCR Text	...) of the falling edge of SCL to avoid unintended generation of START or STOP conditions. 3: The times shown are for a single page of 8 bytes. Multiply by the number of pages loaded into the write cache for total time. 4: This parameter is n...
Description	32K 5.0V 1 MHz I 2 C Smart Serial EEPROM 32K.0V 1兆赫I 2 C串行EEPROM智能 32K 5.0V 1 MHz I 2 C Smart Serial EEPROM 32K5.0V1MHzI2CSmartSerialEEPROM
File Size	93.89K / 12 Page	View it Online	Download Datasheet

				MICROCHIP[Microchip Technology]
Part No.	24LC16B-MT 24LC08B 24LC08B-MT
OCR Text	...) of the falling edge of SCL to avoid unintended generation of START or STOP conditions. 3: The combined TSP and VHYS specifications are due to Schmitt trigger inputs which provide improved noise spike suppression. This eliminates the need ...
Description	8K/16K I 2 C Serial EEPROMs in ISO Micromodules
File Size	397.03K / 12 Page	View it Online	Download Datasheet

				http:// MICROCHIP[Microchip Technology] MicrochipTechnology Microchip Technology Inc.
Part No.	24LC16 24LC16B 24LC16B-IP 24LC16B-ISL 24LC16B-ISN 24LC16B-P 24LC16B-SL 24LC16B-SN
OCR Text	...) of the falling edge of SCL to avoid unintended generation of START or STOP conditions. 3: The combined TSP and VHYS specifications are due to new Schmitt trigger inputs which provide improved noise and spike suppression. This eliminates t...
Description	8K/16K2.5VSPIOBusSerialEEPROM 16K2.5VI2COSerialEEPROM 16K 2.5V I 2 C O Serial EEPROM 8K/16KI2CSerialEEPROMsinISOMicromodules
File Size	70.12K / 12 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	2SJ567
OCR Text	...n for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products...
Description	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (ヰ-MOSV) TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (-MOSV)
File Size	237.21K / 7 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	2SJ610
OCR Text	...n for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products...
Description	Switching Regulator, DC-DC Converter and Motor Drive Applications
File Size	235.74K / 7 Page	View it Online	Download Datasheet

				Toshiba Corporation Toshiba Semiconductor Sanyo Semicon Device
Part No.	2SJ619
OCR Text	...n for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products...
Description	ZD-3.6V- 1 W TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2MOSV) Field Effect Transistor Silicon P Channel MOS Type (L2-PI-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications
File Size	216.16K / 6 Page	View it Online	Download Datasheet

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