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E473K 85L02H 0000X M1201 00ETT GL5UR44 117AP TDA8718
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    ERNI Electronics
Part No. 294002
OCR Text ...kontaktbereich vergoldet mating area gold plating anschlussbereich verzinnt 4-6 m terminal area 4-6 m tin plating koplanarit?t de r anschlsse 0,1 mm coplanarity area of termination 0,1 mm abspulrichtung - reel off direction a1 a10 oh...
Description 0,8 DRC-B, F 4mm, 20 polig

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    ERNI Electronics
Part No. 294001
OCR Text area 4-6 m tin plating koplanarit?t de r anschlsse 0,1 mm coplanarity area of termination anforderungsstufe 2 performance level 2 kontaktbereich vergoldet mating area gold plating anschlussbereich verzinnt 4-6 m 0,1 mm 24,5 150 330 ve...
Description 0,8 DRC-B, F 4mm, 16 polig

File Size 74.73K  /  1 Page

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    ERNI Electronics
Part No. 294000
OCR Text area gold plating anschlussbereich verzinnt 4-6 m terminal area 4-6 m tin plating koplanarit?t de r anschlsse 0,1 mm coplanarity area of termination anforderungsstufe 2 performance level 2 kontaktbereich vergoldet 0,1 mm 24,5 150 330 ...
Description 0,8 DRC-B, F 4mm, 12 polig

File Size 69.51K  /  1 Page

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    TOSHIBA
Part No. TPCC8107
OCR Text ...4 8.14 8.14 8.14 safe operating area safe operating area safe operating area safe operating area (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) note: the above characteristics curves are presented for re...
Description Power MOSFET (P-ch single)

File Size 238.64K  /  9 Page

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    2SD973A 2SD973 2SD0973

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SD973A 2SD973 2SD0973
OCR Text ...nted circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SD973...
Description Silicon NPN epitaxial planer type small signal transistor
Silicon NPN epitaxial planer type(For low-frequency power amplification) 1000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR

File Size 47.93K  /  3 Page

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    TK10V60W

Toshiba Semiconductor
Part No. TK10V60W
OCR Text ...7 8.17 8.17 8.17 safe operating area safe operating area safe operating area safe operating area (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) note: the above characteristics curves are presented fo...
Description MOSFETs
Power MOSFET (N-ch 500V<VDSS≤700V)

File Size 248.40K  /  10 Page

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    SSM6K504NU

Toshiba Semiconductor
Part No. SSM6K504NU
OCR Text ...ng to the board material, board area, board thickness and pad area. when using this device, be sure to take heat dissipation fully into account. 2014-04-04 rev.2.0 ssm6k504nu 3 5. 5. 5. 5. electrical characteristics electrical charac...
Description MOSFETs
Small-signal MOSFET

File Size 234.58K  /  9 Page

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    CENTRONIC
Part No. LD4C-5T
OCR Text ...avi ng eq ui val e nt acti ve area single elements active area r e sp onsivity a/ w = 436 nm dark current (na) capacitance pf shunt r e sistance meg. ohms ris e t i me n s = 820 nm r l = 50 ? typ. type no. mm 2 ...
Description (LDxx-5T) General Purpose Silicon Sensors

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    TPN4R203NC

Toshiba Semiconductor
Part No. TPN4R203NC
OCR Text ...4 8.14 8.14 8.14 safe operating area safe operating area safe operating area safe operating area (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) (guaranteed maximum) note: the above characteristics curves are presented for re...
Description MOSFETs Silicon N-channel MOS (U-MOS)

File Size 237.59K  /  9 Page

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