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For adv Found Datasheets File :: 2864    Search Time::1.797ms    
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    TN87C196CA TN87C196CB AN87196CA AN87196CB AN80196CA

Intel Corporation
Part No. TN87C196CA TN87C196CB AN87196CA AN87196CB AN80196CA
OCR Text ...ddress data bus When the pin is adv it goes inactive (high) at the end of the bus cycle adv can be used as a chip select for external memory ALE adv is active only during external memory accesses Also LSIO when not used as ALE P5 1 INST ...
Description advANCED 16-BIT CHMOS MICROCONTROLLER WITH INTEGRATED CAN 2.0

File Size 375.54K  /  33 Page

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Part No. KM736V799T-55 KM736V799T-50
OCR Text ...d by the burst address advance( adv ) input. lbo pin is dc operated and determines burst sequence(linear or interleaved). zz pin controls power down state and reduces stand-by cur- rent regardless of clk. the km736v799 is fabricated using...
Description 128K X 36 CACHE SRAM, 3.1 ns, PQFP100

File Size 408.77K  /  15 Page

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    Cypress
Part No. CYM74S551 CYM74B550 74B550 CYM74S551PM-50C
OCR Text ... D A17 -A 3 WE 7-WE 0 ADSP ADSC adv SYNCS 0 ECDOE A 15 PD3 CYM74P550A NC PD 2 NC PD 1 GND PD0 NC TAG 7 - TAG 0 A13:0 A17 -A 5 CK D 63-D 32 A WE 3-WE 0 BE 3-BE0 ADSP ADSC adv CE1 OE VCC3 CE 2 VSS CE 3 32Kx32 74b550-2 ...
Description From old datasheet system
OPTi Viper Chip Set Level II Cache Module Family

File Size 197.36K  /  8 Page

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    IS61C632A IS61C632A-6PQ IS61C632A-6TQ IS61C632A-4PQ IS61C632A-4TQ IS61C632A-5PQ IS61C632A-5TQ IS61C632A-7PQ IS61C632A-7T

Integrated Circuit Solution Inc
ICSI
Part No. IS61C632A IS61C632A-6PQ IS61C632A-6TQ IS61C632A-4PQ IS61C632A-4TQ IS61C632A-5PQ IS61C632A-5TQ IS61C632A-7PQ IS61C632A-7TQ IS61C632A-8PQ IS61C632A-8TQ
OCR Text ...IS61C632A and controlled by the adv (burst address advance) input pin. Asynchronous signals include output enable (OE), sleep mode input (ZZ), clock (CLK) and burst mode input (MODE). A HIGH input on the ZZ pin puts the SRAM in the power-do...
Description 32K x 32 SYNCHRONOUS PIPELINED STATIC RAM
SYNCHRONOUS STATIC RAM

File Size 482.58K  /  16 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
ITT, Corp.
Part No. K7B161825A K7A163600A K7A163601A K7B163625A K7A161800A K7A161801A K7A203200B-QCI14
OCR Text ... Enable Control. * ADSP , ADSC, adv Burst Control Pins. * TTL-Level Three-State Output. * 100-TQFP-1420A * Operating in commeical and industrial temperature range. GENERAL DESCRIPTION The K7B163625A and K7B161825A are 18,874,368-bit Syn...
Description    512Kx36 & 1Mx18 Synchronous SRAM
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 400V; Case Size: 35x30 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 470uF; Voltage: 250V; Case Size: 25x30 mm; Packaging: Bulk 512Kx36

File Size 264.02K  /  19 Page

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    K7B323625M K7A321800M-QC14 K7B323625M-QC6575 K7A321800M-QC20 K7A323600M-QC14 K7A323600M-QC20 K7A323600M-QC25 K7B321825M

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K7B323625M K7A321800M-QC14 K7B323625M-QC6575 K7A321800M-QC20 K7A323600M-QC14 K7A323600M-QC20 K7A323600M-QC25 K7B321825M K7B321825M-QC65 K7B321825M-QC75 K7B323625M-QC65
OCR Text ... Enable Control. * ADSP , ADSC, adv Burst Control Pins. * TTL-Level Three-State Output. * 100-TQFP-1420A Package GENERAL DESCRIPTION The K7B323625M and K7B321825M are 37,748,736-bit Synchronous Static Random Access Memory designed for h...
Description 1Mx36 & 2Mx18 Synchronous SRAM

File Size 262.63K  /  19 Page

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    KM732V589A

Samsung semiconductor
Part No. KM732V589A
OCR Text ...put Enable Control. ADSP, ADSC, adv Burst Control Pins. TTL-Level Three-State Output. 100-QFP-1420C 100-TQFP-1420A GENERAL DESCRIPTION The KM732V589A/L is a 1,048,576-bit Synchronous Static Random Access Memory designed for high perform...
Description 32Kx32 Synchronous SRAM

File Size 329.71K  /  15 Page

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    M5M5V5636GP-16 M5M5V5636GP16

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. M5M5V5636GP-16 M5M5V5636GP16
OCR Text ...E2, E3#), Address advance/Load (adv), Clock Enable (CKE#), Byte Write Enables (BWa#, BWb#, BWc#, BWd#) and Read/Write (W#). Write operations are controlled by the four Byte Write Enables (BWa# - BWd#) and Read/Write(W#) inputs. All writes a...
Description 18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM

File Size 255.92K  /  17 Page

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    M5M5V5636GP16

Mitsubishi Electric Semiconductor
Part No. M5M5V5636GP16
OCR Text ...E2, E3#), Address advance/Load (adv), Clock Enable (CKE#), Byte Write Enables (BWa#, BWb#, BWc#, BWd#) and Read/Write (W#). Write operations are controlled by the four Byte Write Enables (BWa# - BWd#) and Read/Write(W#) inputs. All writes a...
Description 18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM

File Size 249.20K  /  16 Page

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    CY7C1347F-166AC CY7C1347F-166AI CY7C1347F-166BGC CY7C1347F-166BGI CY7C1347F CY7C1347F-166BZC CY7C1347F-133AC CY7C1347F-1

CYPRESS[Cypress Semiconductor]
Part No. CY7C1347F-166AC CY7C1347F-166AI CY7C1347F-166BGC CY7C1347F-166BGI CY7C1347F CY7C1347F-166BZC CY7C1347F-133AC CY7C1347F-133AI CY7C1347F-133BGC CY7C1347F-133BGI CY7C1347F-133BZC CY7C1347F-200AI CY7C1347F-250BGC CY7C1347F-200BGC CY7C1347F-200BGI CY7C1347F-200BZC CY7C1347F-225AC CY7C1347F-225BGC CY7C1347F-250AC CY7C1347F-200AC
OCR Text ...t sequence is controlled by the adv input. A 2-bit on-chip wraparound burst counter captures the first address in a burst sequence and automatically increments the address for the rest of the burst access. Byte write operations are qualifie...
Description 4-Mbit (128K x 36) Pipelined Sync SRAM

File Size 420.08K  /  19 Page

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