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For 9.5 Found Datasheets File :: 430070 Search Time::3.875ms
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				PANASONIC[Panasonic Semiconductor]
Part No.	2SC5032
OCR Text	...eatures q q q q q 3.20.1 9.90.3 2.90.2 4.10.2 8.00.2 Solder Dip 13.7-0.2 +0.5 High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer...
Description	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
File Size	57.59K / 3 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SC5034
OCR Text	... s Features q q q 3.20.1 9.90.3 2.90.2 4.10.2 8.00.2 Solder Dip High collector to emitter VCEO High-speed switching Full-pac...5 1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123 2.60.1 0.70.1 7 1:Base 2:Collector 3:Emit...
Description	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
File Size	58.16K / 3 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SC5035
OCR Text	...tures q q q q 4.60.2 3.20.1 9.90.3 2.90.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltag...5 3 40 2 150 -55 to +150 Unit V V V V A A A W C C 15.00.3 3.00.2 13.7-0.2 +0.5 1.20.1...
Description	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
File Size	61.01K / 3 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SC5036 2SC5036A
OCR Text	...res q q q q q 4.60.2 3.20.1 9.90.3 2.90.2 4.10.2 8.00.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide a...5 1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123 2.60.1 0.70.1 7 emitter voltage 2SC5036A ...
Description	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
File Size	58.72K / 3 Page	View it Online	Download Datasheet

				Panasonic Corporation PANASONIC[Panasonic Semiconductor]
Part No.	2SC5037 2SC5037A
OCR Text	...res q q q q q 4.60.2 3.20.1 9.90.3 2.90.2 4.10.2 8.00.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide a...5 3 1 40 2 150 -55 to +150 Unit V 15.00.3 3.00.2 s Absolute Maximum Ratings Parameter Coll...
Description	Silicon NPN triple diffusion planar type
File Size	62.18K / 3 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor] Toshiba Semiconductor
Part No.	2SC5049
OCR Text	... 0 - 0.1 0.95 0.95 1.9 0.2 2.95 0.2 0.3 + 0.2 1.1 - 0.1 0.65 2.8 Hitachi Code JEDEC EIAJ Weight (reference value) ...5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or du...
Description	Silicon NPN Epitaxial npn型硅外延
File Size	23.39K / 5 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SC5050
OCR Text	... 0 - 0.1 0.95 0.95 1.9 0.2 2.95 0.2 0.3 + 0.2 1.1 - 0.1 0.65 2.8 Hitachi Code JEDEC EIAJ Weight (reference value) ...5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or du...
Description	Silicon NPN Epitaxial
File Size	23.65K / 5 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SC5051
OCR Text	...2.1 0.3 0 - 0.1 0.2 0.9 0.1 0.65 0.65 1.3 0.2 0.425 0.1 0.3 + 0.05 - 0.1 0.3 + 0.05 - Hitachi Code JEDEC EIAJ Wei...5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or du...
Description	Silicon NPN Epitaxial
File Size	23.89K / 5 Page	View it Online	Download Datasheet

				Rohm CO.,LTD.
Part No.	2SC5060 2SC5060TV2M
OCR Text	...Max. 1.0 0.5 2.54 2.54 0.9 (1) (2) (3) 1.05 14.5 4.4 0.45 !Equivalent circuit C Taping specifications ROHM : ATV (1) Emitter (2) Collector (3) Base B R1 B : Base C : Collector E : Emitter R1 R2 R2 E 3k 1k...
Description	Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) Power transistor (9010V, 3A) Power transistor (9010V/ 3A) SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
File Size	50.71K / 1 Page	View it Online	Download Datasheet

				SANKEN[Sanken electric]
Part No.	2SC5071
OCR Text	...ns MT-100(TO3P) 5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=7A IC=7A, IB=1.4A IC=7A, IB=1.4A VCE=12V, IE=-1A...
Description	Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
File Size	23.88K / 1 Page	View it Online	Download Datasheet

For 9.5 Found Datasheets File :: 430070 Search Time::3.875ms
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