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    ADS950 ADS-950MM ADS-950MC

Datel
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. ADS950 ADS-950MM ADS-950MC
OCR Text ...8 (USA) * Tel: (508) 339-3000, (800) 233-2765 Fax: (508) 339-6356 * Email: sales@datel.com * Internet: www.datel.com (R) (R) ADS-95...S/H Acquisition Time ( to 0.003%FSR, 10V step) Overvoltage Recovery Time A/D Conversion Rate MIN...
Description 18-Bit/ 500kHz/ Low-Power Sampling A/D Converters
18-Bit, 500kHz, Low-Power Sampling A/D Converters

File Size 182.97K  /  6 Page

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    AME7106 AME7106A AME7106ACKW AME7106CPL AME7106R AME7106RCPL AME7106Y AME7107 AME7107A AME7107ACKW AME7107CPL AME7107R A

AME[Analog Microelectronics]
Part No. AME7106 AME7106A AME7106ACKW AME7106CPL AME7106R AME7106RCPL AME7106Y AME7107 AME7107A AME7107ACKW AME7107CPL AME7107R AME7107RCPL AME7107Y
OCR Text ...) The backplane frequency is 1/800 of the oscillator clock frequency. For example if the oscillator frequency is 48 KHz (3 conversions per ...s segment AB4 sinks current from two LED segments, and has a 16 mA driving capability. The polarity ...
Description 3-1/2 Digit A/D Converter High Accuracy, Low Power

File Size 1,365.67K  /  20 Page

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    AME8815BEDS250 AME8815AEBT180 AME8815AEGT180 AME8815BEBT180 AME8815BEGT180 AME8815AEBT330 AME8815AEGT330 AME8815BEBT330

AME[Analog Microelectronics]
Part No. AME8815BEDS250 AME8815AEBT180 AME8815AEGT180 AME8815BEBT180 AME8815BEGT180 AME8815AEBT330 AME8815AEGT330 AME8815BEBT330 AME8815BEGT330 AME8815AEBT475 AME8815BEBT475 AME8815BEB AME8815AEBT500 AME8815BEBT500 AME8815BECS330 AME8815AEGT475 AME8815BEGT475 AME8815BECS150 AME8815AECS150 AME8815BEGT500 AME8815 AME8815AEBT150 AME8815AEBT250 AME8815AECS180 AME8815AECS250 AME8815AECS330 AME8815AECS475 AME8815AECS500 AME8815AEDS150 AME8815AEDS180 AME8815AEDS250 AME8815AEDS330 AME8815AEDS475 AME8815AEDS500 AME8815AEGT150 AME8815AEGT250 AME8815AEGT500 AME8815BEBT150 AME8815BEBT250 AME8815BECS180 AME8815BECS250 AME8815BECS475 AME8815BECS500 AME8815BEDS150 AME8815BEDS180 AME8815BEDS330 AME8815BEDS475 AME8815BEDS500 AME8815BEGT150 AME8815BEGT250
OCR Text ... Note 1 -1.5 Typ Max 7 1.5 1300 800 600 mA mA mA A A % % % % o o Units V % Dropout Voltage VDROPOUT mV Line Regulation RE...S/DIV Current Limit Response 3 Current Limit Vs. V IN 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 2 ...
Description 1.5A CMOS LDO

File Size 106.32K  /  17 Page

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    BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSERIES

NXP Semiconductors / Philips Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSERIES
OCR Text ... 1 V; see Fig.8 240 320 400 500 800 2 5 mV mV mV mV mV A ns PARAMETER CONDITIONS MAX. UNIT Cd Note diode capacitance 10 pF 1. Pulsed test: tp = 300 s; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT323 st...
Description Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Schottky barrier double diodes

File Size 29.07K  /  5 Page

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    BCM1250

ETC
Broadcom Corporation.
Part No. BCM1250
OCR Text ...w power dissipation of 8-10W (@ 800 MHz) * High functional integration Programming * Instruction Setease and flexibility based on MIPS64 Arc...s world-class performance, power efficiency and integration, the processor is ideal for a broad vari...
Description HIGH PERFORMANCE INTEGRATED 64 BIT MULTIPROCESSOR

File Size 136.73K  /  2 Page

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    BTS117

INFINEON TECHNOLOGIES AG
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BTS117
OCR Text ...) IDSS VIN(th) IIN(1) 60 1.3 800 Tj = - 40 ...+ 150C, ID = 10 mA Off state drain current VDS = 32 V, Tj = -40...+150 C, VIN = 0 V ...s, Tj = -40...+150 C Dynamic Characteristics Turn-on time Turn-off time Slew rate on Slew rate off ...
Description 10 A BUF OR INV BASED PRPHL DRVR, PSFM3
Smart Lowside Power Switch (Logic Level Input Input Protection ESD Thermal Shutdown Overload protection)
From old datasheet system

File Size 137.31K  /  10 Page

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    BTS120 C67078-A5009-A2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BTS120 C67078-A5009-A2
OCR Text ...Values 100 100 20 19 3.5 76 55 800 75 - 55 ... + 150 E 55/150/56 K/W 1.67 75 C - W A Unit V VDS VDGR VGS ID ID-ISO ID puls ISC PSCmax ...S pF - 2000 700 240 45 75 220 110 ns Ciss Coss - Crss - - - - - Turn-on time ton, (ton = ...
Description From old datasheet system
TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)
N-Channel TEMPFET

File Size 310.34K  /  9 Page

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    BUPD1520

Power Innovations Ltd
Power Innovations Limited
Part No. BUPD1520
OCR Text ... 0 0 200 400 600 800 1000 1200 1400 1600 VCE - Collector-Emitter Voltage - V VCE - Collector-Emitter Voltage - V ...s standard warranty. Testing and other quality control techniques are utilized to the extent PI deem...
Description NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

File Size 114.07K  /  5 Page

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    BUX41 ON0260

Motorola Inc
MOTOROLA[Motorola, Inc]
Part No. BUX41 ON0260
OCR Text ...0912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tat...
Description 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS
From old datasheet system

File Size 122.51K  /  4 Page

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    C67070-A2701-A67 050B17N2 BSM50GB170DN2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. C67070-A2701-A67 050B17N2 BSM50GB170DN2
OCR Text ...E 16 14 12 10 8 C 10 1 800 V 1200 V Ciss 10 0 6 Coss 4 2 0 0.0 10 0.1 0.2 0.3 0.4 0.5 0.6 0.7 C 0.9 -1 Crss 0 5 10 15 ...s, L < 50 nH 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 2 0.0 0 250 500 750 1000 1250 1500...
Description IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT功率模块(半桥包括快速续流二极管的绝缘金属基片包
From old datasheet system

File Size 111.79K  /  9 Page

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