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				VIA Technologies ETC N.A.
Part No.	VT82C693
OCR Text	... / 2m / 4M / 8M / 16MxN DRAMs - 8 banks up to 1GB DRAMs (128Mb DRAM technology) - Flexible row and column addresses - 64-bit data width only - 3.3V DRAM interface with 5V-tolerant inputs - Programmable I/O drive capability for MA, command, ...
Description	APOLLO PRO-PLUS
File Size	122.76K / 7 Page	View it Online	Download Datasheet

				Winbond Electronics WINBOND[Winbond]
Part No.	W536030A W536060A W536090A W536120A
OCR Text	...al clock source, 4-bit ALU, two 8-bit timers, one 14 bits divider, maximum 24 pads for input or output, 8 interrupt sources and 8-level nest...2m/ 3M/ 4M bits Voice ROM for W536030A/060A/090A/120A based on 5 bits MDPCM algorithm - Voice ROM (V...
Description	MDPCM Voice/Melody w/64x16 ~ 40x8 LCD, 256x4x2 LCD RAM, 1/8&1/16 Duty, 1/4&1/5 Bias, 32Kx20 ROM, 1.4 VOICE/ MELODY / LCD CONTROLLER
File Size	95.57K / 12 Page	View it Online	Download Datasheet

				Winbond Electronics, Corp. WINBOND[Winbond]
Part No.	W55F05 W55F10 W55F20 W55FXX
OCR Text	...EOP CTRL VSS ADDR 1 2 3 4 8 7 6 5 MODE VDD CLK DATA -1- Publication Release Date: August 1996 Revision A2 W55FXX PIN D...2m BITS -6- W55FXX Headquarters No. 4, Creation Rd. III, Science-Based Industrial Park, Hs...
Description	4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门，串行闪 SERIAL FLASH EEPROM SERIES
File Size	71.95K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BTS630
OCR Text	...on) du/dt(off) Tj min. 5.9 5.8 3 17 12 2 50 95 20 20 150 1) Values typ. max. 70 16.9 20 4.2 18 5.4 19 14 3 150 5 10 98 8 14 120 120 1...2m A Pulse-width Comparator 6V max. 2mA (2) (1) Triangular Waveform Generator Input C t (5)...
Description	From old datasheet system PWM Power Unit (The device allows continuous power control for lamps,LEDs or inductive loads.)
File Size	133.73K / 8 Page	View it Online	Download Datasheet

				Samsung semiconductor Samsung Electronic
Part No.	K4S641632H-TL70 K4S641632H-TC70 K4S641632H-TC75 K4S641632H-TC60 K4S640832H-TC75 K4S641632H-L60 K4S640432H-TC K4S640432H-TC75 K4S640432H-L75 K4S640832H-L75 K4S641632H-L70 K4S641632H-L75 K4S640432H-TL75 K4S640832H-TL75 K4S641632H-TL60 K4S641632H-TL75
OCR Text	... & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) * All inputs are sampled at the positive going edge o...2m x 8 / 1M x 16 Sense AMP 4M x 4 / 2m x 8 / 1M x 16 4M x 4 / 2m x 8 / 1M x 16 4M x 4 / 2m x 8 / 1M ...
Description	64Mb H-die SDRAM Specification
File Size	142.04K / 14 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S643232C-TL55 K4S643232C-TL70 K4S643232C-TC70 V62C5181024LL-70P K4S643232C K4S643232C-TC10 K4S643232C-TC55 K4S643232C-TC60 K4S643232C-TC80 K4S643232C-TL10 K4S643232C-TL60 K4S643232C-TL80 K4S643232C-TC_L10 K4S643232C-TC_L55 K4S643232C-TC_L60 K4S643232C-TC_L70 K4S643232C-TC_L80 K4S643232C-TC/L10 K4S643232C-TC/L55 K4S643232C-TC/L60 K4S643232C-TC/L70 K4S643232C-TC/L80
OCR Text	... & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 15.6us re...
Description	2m x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
File Size	1,151.85K / 43 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4S643232E-TC70 K4S643232E K4S643232E-TC45 K4S643232E-TC50 K4S643232E-TC55 K4S643232E-TC60 K4S643232E-TL50 K4S643232E-TL60 K4S643232E-TC/L/E/N/I/P
OCR Text	... & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 15.6us re...
Description	2m x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存512k × 32 × 4银行同步DRAM LVTTL 2m x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL 512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet
File Size	100.95K / 12 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S643232E-TN70 K4S643232E-TE50 K4S643232E- K4S643232E-TE60 K4S643232E-TE70 K4S643232E-TN50 K4S643232E-TN60 K4S643232E
OCR Text	... & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 15.6us re...
Description	LED ORANGE DIFFUSED 2X5 RECT 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3 2m x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3 2m x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3 LED ORANGE DIFFUSED 2X5 RECT CONNECTOR ACCESSORY LED ORG/RED DIFFUSED 2X5MM RECT -2m x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
File Size	99.80K / 12 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S643232E-TP60 K4S643232E-TP70 K4S643232E-TI K4S643232E-TI60 K4S643232E-TI70
OCR Text	... & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 15.6us re...
Description	2m x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL CONNECTOR ACCESSORY IR LED 880NM 40 DEG SIDE VIEW
File Size	98.65K / 12 Page	View it Online	Download Datasheet

For 8 2m Found Datasheets File :: 10329 Search Time::2ms
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