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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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| Part No. |
K4S561633C-N K4S561633C-P1H K4S561633C-P1L K4S561633C-P75 K4S561633C-RBL K4S561633C-RL K4S561633C-RL75
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| OCR Text |
...& 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). * All inputs are sampled at the positive going edge of the system clock. * Burst read single-bit write operation. * DQM for masking * Auto refresh. * 6... |
| Description |
From old datasheet system IC,SDRAM,4X4MX16,CMOS,BGA,54PIN,PLASTIC 16Mx16 SDRAM 54CSP 16Mx16显示内存54CSP
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| File Size |
58.25K /
8 Page |
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it Online |
Download Datasheet
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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| Part No. |
K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163PF-RG K4S56163PF-RG_F90 K4S56163PF-RG_F1L K4S56163PF-RG_F75 K4S56163PF-RG/F90 K4S56163PF-RG/F1L K4S56163PF-RG/F75 K4S56163PF-RF750 K4S56163PF-BF900 K4S56163PF-RG750 K4S56163PF-BG750 K4S56163PF-RF900
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| OCR Text |
...& 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). * EMRS cycle with address key programs. * All inputs are sampled at the positive going edge of the system clock. * Burst read single-bit write operatio... |
| Description |
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 LEAD FREE, FBGA-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54 16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54 4M x 16bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM CAP 47UF 350V ELECT EB SMD
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| File Size |
111.59K /
12 Page |
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it Online |
Download Datasheet
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Price and Availability
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