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  7.0-12.0 Datasheet PDF File

For 7.0-12.0 Found Datasheets File :: 436556    Search Time::6.469ms    
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    2SC5010 2SC5010-T1 2SC5010-T1-T2

NEC Corp.
Part No. 2SC5010 2SC5010-T1 2SC5010-T1-T2
OCR Text ...ICBO IEBO hFE fT Cre |S21e|2 NF 7.0 75 12.0 0.4 8.5 1.5 2.5 0.7 MIN. TYP. MAX. 0.1 0.1 150 GHz pF dB dB UNIT TEST CONDITIONS VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 10 mA*1 VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 3 V, IE = 0 , f ...
Description NPN epitaxial-type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
128 x 128 pixel format, LED or EL Backlight available

File Size 59.95K  /  10 Page

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    2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2

NEC[NEC]
NEC Corp.
Part No. 2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2
OCR Text ...mA,f = 1.0 GHz VCE = 10 V, IC = 7 mA,f = 1.0 GHz A A *1 Pulse Measurement; PW 350 s, Duty Cycle 2 % Pulsed. *2 Measured with 3 terminals bridge, Emitter and Case should be grounded. hFE Classification Rank Marking hFE EB R26 50 to ...
Description NPN epitaxial-type silicon transistor
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 50.99K  /  8 Page

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    2SC5012 2SC5012-T1 2SC5012-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5012 2SC5012-T1 2SC5012-T2
OCR Text ... mA,f = 1.0 GHz VCE = 8 V, IC = 7 mA,f = 1.0 GHz A A *1 Pulse Measurement; PW 350 s, Duty Cycle 2 % Pulsed. *2 Measured with 3 terminals bridge, Emitter and Case should be grounded. hFE Classification Rank Marking hFE EB R36 50 to ...
Description HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 49.43K  /  7 Page

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    2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB

NEC[NEC]
NEC Corp.
Part No. 2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB
OCR Text ...ICBO IEBO hFE fT Cre |S21e|2 NF 7.5 50 100 10 0.25 9.5 1.8 3.0 0.8 MIN. TYP. MAX. 1.0 1.0 250 GHz pF dB dB UNIT TEST CONDITION VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 6 V, IC = 10 mA*1 VCE = 6 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz*...
Description L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 51.33K  /  8 Page

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    2SC5014 2SC5014-T1 2SC5014-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5014 2SC5014-T1 2SC5014-T2
OCR Text ...9.4 -45.4 -51.0 -55.5 -59.6 -63.7 -67.3 -70.7 -74.1 -77.1 -80.7 -82.9 -90.3 -93.1 -93.5 -101.3 -103.4 -113.9 -115.1 -121.2 -127.8 -138.4 -147.3 -149.6 -158.2 -165.5 S12 ANG 169.7 159.5 150.5 142.2 134.0 127.8 121.6 116.0 111.1 106.5 102...
Description HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 48.18K  /  8 Page

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    2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518

NEC[NEC]
NEC Corp.
Part No. 2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518
OCR Text ...3.716 11.834 10.355 9.190 8.182 7.376 6.751 6.171 5.658 5.286 4.932 4.630 4.347 4.128 3.914 3.734 3.561 3.386 3.242 3.117 2.986 2.891 2.790 ...0 76.2 73.3 70.9 68.7 66.0 64.0 61.1 59.3 56.7 54.9 53.0 50.2 48.6 47.4 44.0 42.6 40.5 MAG .011 .029...
Description Discrete
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 49.94K  /  8 Page

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    2SC5018

PANASONIC[Panasonic Semiconductor]
Matsshita / Panasonic
Part No. 2SC5018
OCR Text ... (1.45) 0.8 0.5 4.50.1 0.7 4.0 s Features q q 0.65 max. 1.0 1.0 High collector to base voltage VCBO. High emitter to base voltage VEBO. 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collect...
Description Transistor
Silicon NPN triple diffusion planer type(For high breakdown voltage high-speed switching)

File Size 35.44K  /  2 Page

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    2SC5019

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5019
OCR Text ...VCE = 8V, IC = 20mA, f = 800MHz 7.5 15 10 80 5 6 0.9 10 11.5 1.7 1.2 250 GHz pF dB dB dB min typ max 1 1 Unit A A V V 2.50.1 +0.25 1 Transistor PC -- Ta 1.4 2SC5019 IC -- VCE 24 Ta=25C 20 IB=200A 100 120 VCE=8V IC -- V...
Description Silicon NPN epitaxial planer type(For UHF band low-noise amplification)

File Size 37.02K  /  2 Page

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    2SC5022

HITACHI[Hitachi Semiconductor]
Part No. 2SC5022
OCR Text ...tage V CB (V) 5 10.0 0.3 7.0 0.3 3.2 0.2 2.8 0.2 2.5 0.2 Unit: mm 0.6 5.0 0.3 2.0 0.3 1.2 0.2 1.4 0.2 12.0 0.3 4.45 0.3 2.5 14.0 1.0 0.5 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-22...
Description Silicon NPN Triple Diffused

File Size 33.36K  /  7 Page

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    2SC5032

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5032
OCR Text ... 4.10.2 8.00.2 Solder Dip 13.7-0.2 +0.5 High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insul...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 57.59K  /  3 Page

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