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CET[Chino-Excel Technology]
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| Part No. |
CEF07N8
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| OCR Text |
... = 50V, ID =4A VDD = 400V, ID = 6a, VGS = 10V RGEN=25
800 50 100 2 1.8 4 3 32 68 194 70 70 45 95 230 98 85 4 2.0
V A nA
ON CHARACTERISTICS a
Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward T... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
42.34K /
5 Page |
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SavantIC
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| Part No. |
2SC3460
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| OCR Text |
...peration applications 800v/6a switching regulator applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo ... |
| Description |
SILICON POWER TRANSISTOR
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| File Size |
241.39K /
4 Page |
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SANYO
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| Part No. |
2SC4430
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| OCR Text |
... Symbol VCE(sat) VBE(sat) fT IC=6a, IB=1.2A IC=6a, IB=1.2A VCE=10V, IC=0.8A VCB=10V, f=1MHz 1100 800 7 800 0.5 3.0 0.3 15 215 Conditions Ratings min typ max 2.0 1.5 Unit V V MHz pF V V V V s s s
Cob V(BR)CBO IC=1mA, IE=0 V(BR)CEO IC=5mA,... |
| Description |
NPN Triple Diffused Planar Silicon Transistor 800v/12A Switching Regulator Applications
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| File Size |
112.48K /
5 Page |
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it Online |
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SEME-LAB[Seme LAB] TT electronics Semelab Limited
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| Part No. |
BUL52B BUL52
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| OCR Text |
...20mA IB = 0.2A IB = 0.4A IB = 0.6a IB = 0.2A IB = 0.4A IB = 0.6a VCE = 4V f = 1MHz IC = 1A IC = 2A IC = 3A IC = 1A VCE = 400V
V 10 100 100 10 100
A A A
20 15 10 5
30 25 15 0.05 0.1 0.15 0.3 0.8 0.9 0.95 20 40 0.1 0.2 0.3 0.5 1.0... |
| Description |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
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| File Size |
19.27K /
2 Page |
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it Online |
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