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  50v 12a Datasheet PDF File

For 50v 12a Found Datasheets File :: 2180    Search Time::3.469ms    
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    IRHM57160

International Rectifier
Part No. IRHM57160
OCR Text ...= -20V VGS =12V, ID = 35A VDS = 50v VDD = 50v, ID = 35A VGS =12V,RG = 2.35 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to...12a. Unclamped Inductive Test Circuit 200 0 25 50 75 100 125 150 V (B R )D S S tp Starti...
Description RADIATION HARDENED POWER MOSFET

File Size 122.26K  /  8 Page

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    2SA1567

SANKEN ELECTRIC CO LTD
SANKEN[Sanken electric]
Part No. 2SA1567
OCR Text ...VCE(sat) fT COB Conditions VCB=-50v VEB=-6V IC=-25mA VCE=-1V, IC=-6A IC=-6A, IB=-0.3A VCE=-12V, IE=0.5A VCB=-10V, f=1MHz External Dimensi...12a -9A -6 -40mA Tem mp) e Te C -2 -5mA -2 0 0 -1 -2 -3 -...
Description Silicon PNP Epitaxial Planar Transistor(DC Motor Driver/ Chopper Regulator and General Purpose)
Silicon PNP Epitaxial Planar Transistor(DC Motor Driver, Chopper Regulator and General Purpose)

File Size 23.54K  /  1 Page

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    99026 EVBD4400

IXYS[IXYS Corporation]
Part No. 99026 EVBD4400
OCR Text ... dv/dt immunity of greater than 50v/nanosecond * On-chip generated negative gate drive * Overcurrent protection by means of desaturation det...12a, 1000V fast recovery diode 4 pole terminal block 1M ohm, 1/4 W IXDP631 osc load resistor Crystal...
Description HALF BRIDGE DRIVER Evaluation Board

File Size 835.59K  /  8 Page

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    FA57SA50LC

IRF[International Rectifier]
Part No. FA57SA50LC
OCR Text ...DS = VGS, ID = 250A --- S VDS = 50v, ID = 34A 50 VDS = 500V, VGS = 0V A 500 VDS = 400V, VGS = 0V, TJ = 125C 200 V GS = 20V nA -200 VGS = -20...12a. Unclamped Inductive Test Circuit 300 0 25 50 75 100 125 150 V (B R )D SS tp Startin...
Description HEXFET Power MOSFET

File Size 127.88K  /  8 Page

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    IRF034

International Rectifier, Corp.
http://
Part No. IRF034
OCR Text ...C, IF = 25A, di/dt 100A/s VDD 50v Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Therm...12a. Unclamped Inductive Test Circuit V (B R )D S S tp Fig 12c. Maximum Avalanche Energy Vs. D...
Description REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) 重复性雪崩和DV /受好评的HEXFET三极管通孔(TO-204AA/AE DT)的
60V Single N-Channel Hi-Rel MOSFET in a TO-204AE package

File Size 142.90K  /  7 Page

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    IRF644N IRF644NL IRF644NS IRF644 IRF644NSTRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF644N IRF644NL IRF644NS IRF644 IRF644NSTRR
OCR Text ...DS = VGS, ID = 250A --- S VDS = 50v, ID = 8.4A 25 VDS = 250v, VGS = 0V A 250 VDS = 200V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20...12a. Unclamped Inductive Test Circuit V (B R )D SS tp 60 0 25 50 75 100 125 150 175 Starti...
Description 250v Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=250v, Rds(on)=240mohm, Id=14A)
Power MOSFET(Vdss=250v/ Rds(on)=240mohm/ Id=14A)
TRANSISTOR | MOSFET | N-CHANNEL | 250v V(BR)DSS | 14A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 250v五(巴西)直|4A条(丁)|63AB

File Size 122.60K  /  11 Page

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    IRF8010

http://
International Rectifier
Part No. IRF8010
OCR Text ...= 80A VDS = 80V VGS = 10V VDD = 50v ID = 80A RG = 39 VGS = 10V VGS = 0V VDS = 25V Conditions VDS = 25V, ID = 45A = 1.0MHz VGS = 0V, ...12a. Unclamped Inductive Test Circuit 200 100 V(BR)DSS tp 0 25 50 75 100 125 150 175 ...
Description 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 488.97K  /  8 Page

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    IRFB11N50A IRFB11N50

IRF[International Rectifier]
Part No. IRFB11N50A IRFB11N50
OCR Text ...x. Units Conditions --- S VDS = 50v, ID = 6.6A 52 ID = 11A 13 nC VDS = 400V 18 VGS = 10V, See Fig. 6 and 13 --- VDD = 250v --- ID = 11A ns ...12a. Unclamped Inductive Test Circuit V (B R )D SS tp 200 100 0 25 50 75 100 125 150 St...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.52ohm/ Id=11A)
Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=11A)
Power MOSFET(Vdss=500V Rds(on)max=0.52ohm Id=11A)

File Size 96.77K  /  8 Page

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    IRFDC20

IRF[International Rectifier]
Part No. IRFDC20
OCR Text ...GS, ID = 250A 1.4 -- -- S VDS = 50v, ID = 1.3A -- -- 25 VDS = 600V, VGS = 0V A -- -- 250 VDS = 480V, VGS = 0V, TJ = 125C -- -- 100 VGS = 20V...12a. Unclamped Inductive Test Circuit Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig ...
Description Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=0.32A)

File Size 418.01K  /  8 Page

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    IRFMG40

IRF[International Rectifier]
Part No. IRFMG40
OCR Text ..., IF = 3.9A, di/dt 100A/s VDD 50v Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Therm...12a. Unclamped Inductive Test Circuit V (B R )D S S tp Fig 12c. Maximum Avalanche Energy Vs. D...
Description POWER MOSFET THRU-HOLE 1000V, N-CHANNEL

File Size 471.92K  /  7 Page

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For 50v 12a Found Datasheets File :: 2180    Search Time::3.469ms    
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