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  30v-rrm Datasheet PDF File

For 30v-rrm Found Datasheets File :: 1922    Search Time::1.39ms    
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    UFB120FA20

IRF[International Rectifier]
Part No. UFB120FA20
OCR Text ...F = 1.0A, diF/dt = 200A/s, VR = 30V TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C IF = 50A VR = 100V diF /dt = 200A/s IRRM ...RRM 0.01 L = 70H D.U.T. dif/dt ADJUST D G IRFP250 S 1. diF/dt - Rate of change of current throu...
Description Insulated Ultrafast Rectifier Module

File Size 210.28K  /  6 Page

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    MURB1020CT-1 MURB1020CT MUR1020CT

International Rectifier
Part No. MURB1020CT-1 MURB1020CT MUR1020CT
OCR Text ...IF = 1.0A, diF/dt = 50A/s, VR = 30V IF = 0.5A, IR = 1.0A, IREC = 0.25A TJ = 25C TJ = 125C IF = 5A VR = 160V diF /dt = 200A/s IRRM Peak...RRM 0.5 I RRM di(rec)M/dt 0.75 I RRM 5 1 /dt di fF/dt 1. diF/dt - Rate of change of cur...
Description Ultrafast Rectifier

File Size 191.64K  /  8 Page

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    MURB1620CT-1 MURB1620CT MUR1620CT

International Rectifier
Part No. MURB1620CT-1 MURB1620CT MUR1620CT
OCR Text ...IF = 1.0A, diF/dt = 50A/s, VR = 30V IF = 0.5A, IR = 1.0A, IREC = 0.25A TJ = 25C TJ = 125C IF = 8A VR = 160V diF /dt = 200A/s IRRM Peak...RRM 0.5 I RRM di(rec)M/dt 0.75 I RRM 5 1 /dt di fF/dt 1. diF/dt - Rate of change of cur...
Description 200V 16A HEXFRED Common Cathode Diode in a TO-262 package
Ultrafast Rectifier

File Size 190.33K  /  8 Page

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    STP60NF03L 6771

ST Microelectronics
STMicroelectronics
Part No. STP60NF03L 6771
OCR Text 30V - 0.008 - 60A TO-220 STripFETTM POWER MOSFET PRELIMINARY DATA T YPE STP60NF03L s s V DSS 30 V R DS(on) < 0.010 ID 60 A ...RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery...
Description N-CHANNEL Power MOSFET
N-CHANNEL 30V - 0.008 - 60A TO-220 STripFET TM POWER MOSFET
From old datasheet system
N-CHANNEL 30V - 0.008 ohm - 60A TO-220 STripFET POWER MOSFET

File Size 45.52K  /  6 Page

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    STMICROELECTRONICS[STMicroelectronics]
Part No. STY16NA90 6004
OCR Text ...RELIABLE MOUNTING THROUGH CLIP 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED LOW INTRINSIC CAPACITANCE 100% AVALANCHE TESTE...RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery...
Description N - CHANNEL 900V - 0.5 ohm - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET
From old datasheet system
N - CHANNEL 900V - 0.5 - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET

File Size 46.46K  /  5 Page

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    STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. STY60NA20 6123
OCR Text ...RELIABLE MOUNTING THROUGH CLIP 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED LOW INTRINSIC CAPACITANCE 100% AVALANCHE TESTE...RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward O n Voltage Reverse Recover...
Description N-CHANNEL 200V - 0.030 OHM - 60A - FAST POWER MOS TRANSISTOR
N - CHANNEL 200V - 0.030ohm - 60 A - Max247 FAST POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL 200V - 0.030 - 60 A - Max247 FAST POWER MOS TRANSISTOR
N-CHANNEL Power MOSFET

File Size 35.62K  /  5 Page

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    HFA180NH40R

International Rectifier
Part No. HFA180NH40R
OCR Text ... = 1.0A, dif /dt = 200A/s, VR = 30V 90 140 ns TJ = 25C 290 440 TJ = 125C IF = 180A 8.7 20 TJ = 25C A 18 30 TJ = 125C VR = 200V 420 1100...RRM 2 0.5 I RRM di(rec)M/dt 5 0.01 L = 70H D.U.T. D IRFP250 S 1 0.75 I RRM di f /dt ...
Description HEXFREDTM Ultrafast, Soft Recovery Diode

File Size 254.19K  /  5 Page

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    HFA180NH40

International Rectifier
Part No. HFA180NH40
OCR Text ... = 1.0A, dif /dt = 200A/s, VR = 30V 90 140 ns TJ = 25C 290 440 TJ = 125C IF = 180A 8.7 20 TJ = 25C A 18 30 TJ = 125C VR = 200V 420 1100...RRM 2 0.5 I RRM di(rec)M/dt 5 0.01 L = 70H D.U.T. D IRFP250 S 1 0.75 I RRM di f /dt ...
Description HEXFREDTM Ultrafast, Soft Recovery Diode

File Size 254.46K  /  5 Page

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    ST2100C..RSERIES ST2100C42R3L ST2100C30R0 ST2100C30R0L ST2100C30R1 ST2100C30R1L ST2100C30R2 ST2100C30R2L ST2100C30R3 ST2

IRF[International Rectifier]
International Rectifier, Corp.
Part No. ST2100C..RSERIES ST2100C42R3L ST2100C30R0 ST2100C30R0L ST2100C30R1 ST2100C30R1L ST2100C30R2 ST2100C30R2L ST2100C30R3 ST2100C30R3L ST2100C32R0 ST2100C32R0L ST2100C32R1 ST2100C32R1L ST2100C32R2 ST2100C32R3 ST2100C32R3L ST2100C34R0 ST2100C34R0L ST2100C34R1 ST2100C34R1L ST2100C34R2 ST2100C34R2L ST2100C34R3 ST2100C34R3L ST2100C36R0 ST2100C36R0L ST2100C36R1 ST2100C36R1L ST2100C36R2 ST2100C36R2L ST2100C36R3 ST2100C36R3L ST2100C38R0 ST2100C38R0L ST2100C38R1 ST2100C38R1L ST2100C38R2 ST2100C38R2L ST2100C38R3 ST2100C38R3L ST2100C40R0 ST2100C40R0L ST2100C40R1 ST2100C40R1L ST2100C40R2 ST2100C40R2L ST2100C40R3 ST2100C40R3L ST2100C42R0 ST2100C42R0L ST2100C42R1 ST2100C42R1L ST2100C42R2 ST2100C42R2L ST2100C42R3 ST2100C32R2L ST2100C38R1LPBF
OCR Text ... = 0.5s TJ = TJ max. Gate drive 30V, 15, Vd = 67% VDRM, T J = 25C Rise time 0.5s IT = 1000A, t = 1ms, TJ = TJ max, VRM = 50V, p d Typ...RRM applied Triggering Parameter PGM PG(AV) IGM VGM -V GM IGT VGT Maximum peak gate power Maxim...
Description 3850 A, 3400 V, SCR
3850 A, 3000 V, SCR
3850 A, 3800 V, SCR
3850 A, 4000 V, SCR
4000V 1770A Phase Control SCR in a A-36 (R-Puk) package
3600V 1770A Phase Control SCR in a A-36 (R-Puk) package
3800V 1770A Phase Control SCR in a A-36 (R-Puk) package
3000V 1770A Phase Control SCR in a A-36 (R-Puk) package
3200V 1770A Phase Control SCR in a A-36 (R-Puk) package
4200V 1770A Phase Control SCR in a A-36 (R-Puk) package
PHASE CONTROL THYRISTORS
DIODE ZENER DUAL COMMON-ANODE 300mW 36Vz 5mA-Izt 0.05 0.1uA-Ir 27 SOT-23 3K/REEL 相位控制晶闸

File Size 68.89K  /  6 Page

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    STE38NB50F

STMicroelectronics
Part No. STE38NB50F
OCR Text ...XTREMELY HIGH dv/dt CAPABILITY 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDU...RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery...
Description N-CHANNEL 500V - 0.11 OHM - 38A - ISOTOP POWERMESH MOSFET

File Size 270.74K  /  8 Page

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For 30v-rrm Found Datasheets File :: 1922    Search Time::1.39ms    
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