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  30v 20a Datasheet PDF File

For 30v 20a Found Datasheets File :: 3114    Search Time::3.813ms    
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    HUF76107D3 HUF76107D3S HUF76107D3ST HUF76107D3STNL

FAIRCHILD[Fairchild Semiconductor]
Part No. HUF76107D3 HUF76107D3S HUF76107D3ST HUF76107D3STNL
OCR Text 30v, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFETT...20a, 30v * Ultra Low On-Resistance, rDS(ON) = 0.052 * Temperature Compensating PSPICE(R) Model * Tem...
Description 20a 30v 0.052 Ohm N-Channel Logic Level UltraFET Power MOSFETs
20a, 30v, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
20a/ 30v/ 0.052 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETs

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    HUFA76419D3 HUFA76419D3S HUFA76419D3STNL

FAIRCHILD[Fairchild Semiconductor]
Part No. HUFA76419D3 HUFA76419D3S HUFA76419D3STNL
OCR Text ...= 0V to 5V VGS = 0V to 1V VDD = 30v, ID = 20a, Ig(REF) = 1.0mA (Figures 14, 19, 20) VDD = 30v, ID = 20a VGS = 10V, RGS = 13 (Figures 16, 21, 22) VDD = 30v, ID = 19A VGS = 4.5V, RGS = 13 (Figures 15, 21, 22) 12 124 28 50 205 115 ns ns ns ns ...
Description 20a, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFETPower MOSFETs
20a, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

File Size 194.86K  /  10 Page

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    Wuxi NCE Power Semicond...
Part No. NCE6020L
OCR Text ...sfer capacitance c rss v ds =30v,v gs =0v, f=1.0mhz - 25 - pf switching characteristics (note 4) turn-on delay time t d(on) -...20a - 1.2 v diode forward current (note 2) i s - - 20 a reverse recovery time t rr ...
Description NCE N-Channel Enhancement Mode Power MOSFET

File Size 411.40K  /  7 Page

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    AO4926

Alpha & Omega Semiconductors
Part No. AO4926
OCR Text 30v VDS(V) = 30v ID=7.3A (VGS = 10V) ID = 9.5A RDS(ON) < 13.5m <24m (VGS = 10V) <29m (VGS = 4.5V) RDS(ON) < 16m UIS TESTED! Rg,Ciss,Coss,Crs...20a 25C Qrr (nC) 10 9 8 7 Irm (A) 5 4 3 2 1 0 1000 3 0 0 200 400 600 800 125C S 0.5 0 1000 trr (ns) ...
Description Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 237.17K  /  8 Page

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    Wuxi NCE Power Semicond...
Part No. NCE6050KA
OCR Text ...sfer capacitance c rss v ds =30v,v gs =0v, f=1.0mhz - 120 - pf switching characteristics (note 4) turn-on delay time t d(on) ...20a, v gs =10v - 15 nc drain-source diode characteristics diode forward voltage (note 3) v...
Description NCE N-Channel Enhancement Mode Power MOSFET

File Size 443.46K  /  7 Page

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    Alpha & Omega Semiconductor
Part No. AONP36336
OCR Text 30v 30v i d (at v gs =10v) 21a 18a r ds(on) (at v gs =10v) < 4.7m < 5.8m r ds(on) (at v gs =4.5v) < 5.7m < 7.3m application...20a total gate charge q1 electrical characteristics (t j =25c unless otherwise noted) static paramet...
Description Asymmetric LV MOSFETs (12V - 30v)

File Size 452.52K  /  10 Page

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    STN4488L

Stanson Technology
Part No. STN4488L
OCR Text ...ss code feature 30v/20a, r ds(on) = 3.8m (typ.) @vgs = 10v 30v/18a, r ds(on) = 5.2m @vgs = 4.5v super high density cell design for extremely low r ds(on) exceptional onresistance and maximum dc curren...
Description STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.

File Size 634.35K  /  7 Page

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    AO4488 AO448810

Alpha & Omega Semiconductors
Part No. AO4488 AO448810
OCR Text ...tinuous drain current a ao4488 30v n-channel mosfet product summary v ds (v) = 30v i d = 20a (v gs = 10v) r ds(on) < 4.6m (v gs = 10v) r ds(on) < 6.4m (v gs = 4.5v) esd protected 100% uis tested 100% rg tested gene...
Description 30v N-Channel MOSFET

File Size 186.00K  /  5 Page

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    Alpha & Omega Semicondu...
Part No. AO4354
OCR Text 30v n-channel alphamos general description product summary v ds i d (at v gs =10v) 23a r ds(on) (at v gs =10v) < 3.7m w r ds(on)...20a v gs =10v, i d =20a dynamic parameters v ds =5v, i d =20a v ds =v gs, i d =250 m a drain-source...
Description 30v N-Channel AlphaMOS

File Size 317.28K  /  5 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AO4488
OCR Text ...n current a ao4488 v ds (v) = 30v i d = 20a (v gs = 10v) r ds(on) < 4.6m (v gs = 10v) r ds(on) < 6.4m (v gs = 4.5v) the ao4488 uses advanced trench technology to provide excellent r ds(on) with low gate charge. this...
Description 30v N-Channel MOSFET

File Size 365.81K  /  5 Page

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