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Cystech Electonics Corp...
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| Part No. |
MTA020N01SN3-0-T1-G
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| OCR Text |
...@ t a =25 c, v gs =4.5v (note 3) 6.4 continuous drain current @ t a =70 c, v gs =4.5v (note 3) i d 5.1 pulsed drain current (n...0.01 w/ c operating junction and storage temperature range tj ; tstg -55~+150 c not... |
| Description |
14V N-Channel Enhancement Mode MOSFET
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| File Size |
417.43K /
9 Page |
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it Online |
Download Datasheet
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Cystech Electonics Corp...
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| Part No. |
MTD07N04E3-0-UB-X
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| OCR Text |
... (note 3) e ar 7 mj t c =25 c (note 1) 69 t c =100 c ...0.063 in(1.6mm) from case for 10 seconds t l 300 maximum temperature for soldering @ package bo... |
| Description |
N-Channel Enhancement Mode Power MOSFET
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| File Size |
375.17K /
8 Page |
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it Online |
Download Datasheet |
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Cystech Electonics Corp...
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| Part No. |
MTE100N10KRL3-0-T3-G
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| OCR Text |
...current @ t a =25 c, v gs =10v 3.0 continuous drain current @ t a =70 c, v gs =10v i d 2.4 pulsed drain current *1 i dm 15 avalanche current @ l=0.1mh i as 12 a avalanche energy @ l=1mh, i d =6a, v dd =50v *2 e as 1... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
362.60K /
9 Page |
View
it Online |
Download Datasheet |
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Cystech Electonics Corp...
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| Part No. |
MTE130N20F3-0-T7-X
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| OCR Text |
...=10v (note 2) 3.1 continuous drain current @t a =70 c, v gs =10v (note 2) i dsm 2.5 pulsed drain cur...0.1mh (note 3) i as 8 a single pulse avalanche en... |
| Description |
N-Channel Enhancement Mode Power MOSFET
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| File Size |
399.53K /
9 Page |
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it Online |
Download Datasheet |
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Cystech Electonics Corp...
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| Part No. |
MTD015P10E3-0-UB-X
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| OCR Text |
... (note 3) i dm -428 continuous drain current @ t a =25 c , v gs =10v (note 2) -8.6 conti...0.1mh i as -107 a avalanche energy @ ... |
| Description |
P-Channel Enhancement Mode Power MOSFET
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| File Size |
318.34K /
8 Page |
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it Online |
Download Datasheet |
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