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SEMIKRON
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| Part No. |
SEMIX151GB12T4S
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| OCR Text |
...0v v ce = 1200 v t j =25c 0.1 0.3 ma t j = 150 c ma c ies v ce =25v v ge =0v f=1mhz 9.3 nf c oes f=1mhz 0.58 nf c res f=1mhz 0.51 nf q g v g...150a t j = 150 c r g on =1 ? r g off =1 ? di/dt on = 3900 a/s di/dt off = 2000 a/s 185 ns t r 42 ns ... |
| Description |
Trench IGBT Modules 230 A, 1200 V, N-CHANNEL IGBT
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| File Size |
128.83K /
5 Page |
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it Online |
Download Datasheet
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IRF[International Rectifier]
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| Part No. |
75SLQ045 75SLQ045-15
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| OCR Text |
...ve Surge Current 500 A @ tp = 8.3 ms half-sine
Limits
75
Units
A
Conditions
50% duty cycle @ TC = 78C, square waveform
Electr...150A @ 75A @ 150A @ 75A @ 150A TJ = 25C TJ = 100C TJ = 125C
Conditions
TJ = -55C TJ = 25C TJ = 1... |
| Description |
75V 45A Hi-Rel Schottky Discrete Diode in a SMD-1 package
SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES
75 A, 45 V, SILICON, RECTIFIER DIODE
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| File Size |
47.21K /
4 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
MG150Q2YS51
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| OCR Text |
...tion voltage : v ce (sat) = 3.6v (max) enhancement-mode includes a complete half bridge in one package. the electrodes are i...150a, v ge = 15v t j = 125c D 3.1 4.0 v input capacitance c ies v ce = 10v, v ge = 0, f... |
| Description |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
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| File Size |
256.93K /
7 Page |
View
it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
MG150Q2YS50
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| OCR Text |
...ion voltage : v ce (sat) = 3.6v (max) enhancement-mode includes a complete half bridge in one package. the electrodes are i...150a, v ge = 15v t j = 125c D 3.1 4.0 v input capacitance c ies v ce = 10v, v ge = 0,... |
| Description |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
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| File Size |
254.83K /
7 Page |
View
it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
MG150Q2YS40
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| OCR Text |
...orque (terminal / mounting) D 3 / 3 nm unit: mm jedec D jeita D toshiba 2-109c1a weight: 430g (typ.)
mg150q2ys40 2001-08-16 ...150a, v ge = 15v D 3.0 4.0 v input capacitance c ies v ce = 10v, v ge = 0, f = 1mhz D 18... |
| Description |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
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| File Size |
196.32K /
6 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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