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    M52959FP M52959E

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M52959FP M52959E
OCR Text ... Data to OUT1,OUT2 terminals by 2bit at next CONT pulse edge from Low to High. 6. It can repeat distance detection by continuing control of 4 and 5. 7. It needs the signal synchronized with timing of Surround light hold as radiation control...
Description PSD ON CHIP DISTANCE DETECTION SIGNAL PROCESSOR
From old datasheet system

File Size 63.13K  /  8 Page

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    GS815018 GS815036

GSI Technology, Inc.
Part No. GS815018 GS815036
OCR Text ...ormance synchronous SRAM with a 2bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging ...
Description 16MbM x 18Bit)Synchronous Burst SRAM(16M位(1M x 18位)同步静态RAM(带2位脉冲地址计数器)) 16Mb的(100万x 18位)同步突发静态存储器,600位(100万18位)同步静态随机存储器(带2位脉冲地址计数器)
16Mb12K x 36Bit)Synchronous Burst SRAM(16M位(512K x 36位)同步静态RAM(带2位脉冲地址计数器)) 16Mb的(12k × 36Bit)同步突发静态存储器,600位(12k × 36位)同步静态随机存储器(带2位脉冲地址计数器)

File Size 520.27K  /  26 Page

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    GS816018

GSI Technology
Part No. GS816018
OCR Text ...ormance synchronous SRAM with a 2bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM application,s ranging ...
Description 16MbM x 18Bit)Sync Burst SRAM(16M位(1M x 18位)同步静态RAM(位脉冲地址计数)

File Size 522.43K  /  26 Page

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    GS880E18 GS880E36T-11 GS880E18T-11 GS880E32T-11.5I GS880E18T-11.5T GS880E36T-11.5I GS880E18T-11.5I GS880E18T-66I GS880E3

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GSI Technology, Inc.
Part No. GS880E18 GS880E36T-11 GS880E18T-11 GS880E32T-11.5I GS880E18T-11.5T GS880E36T-11.5I GS880E18T-11.5I GS880E18T-66I GS880E36T-66I GS880E36T-11I GS880E36T-100 GS880E36T-100I GS880E18T-100 GS880E18T-11I GS880E18T-100I GS880E32T-80 GS880E32T-80I
OCR Text ...ormance synchronous SRAM with a 2bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging ...
Description 512K X 18 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100
8Mb12K x 18Bit) Synchronous Burst SRAM(8M位(512K x 18位)同步静态RAM(带2位脉冲地址计数器))

File Size 853.88K  /  25 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. KFG1216D2M-DED KFG1216Q2M-DEB KFG1216Q2M-DED KFG1216D2M-DEB KFG1216D2M-DIB KFG1216D2M-DID KFG1216U2M-DEB KFG1216U2M-DED KFG1G16D2M-DEB KFG1G16D2M-DED KFG1G16Q2M-DED KFG1G16U2M-DED KFH1216D2M-DEB KFH1216D2M-DED KFH1216Q2M-DEB KFH1216Q2M-DED KFH1216U2M-DEB KFH1G16D2M-DEB KFH1G16D2M-DED KFG1G16U2M-DEB KFH1216U2M-DED KFG1216Q2M-DIB KFG1216Q2M-DID KFG1216U2M-DID KFG1216U2M-DIB KFG1G16D2M-DID KFG1G16Q2M-DIB KFG1G16Q2M-DID KFG1G16U2M-DID KFH1216U2M-DID KFH1216D2M-DID KFH1G16Q2M-DED KFH1G16Q2M-DEB50
OCR Text ...ogrammable(OTP) area * Internal 2bit EDC / 1bit ECC * Internal Bootloader supports Booting Solution in system Software Features * Handshaking Feature - INT pin: Indicates Ready / Busy of OneNAND - Polling method: Provides a software me...
Description RSM, TKF 15K 1/16W 5% 040
FLASH MEMORY 闪存
.025 SOCKET STRIPS
64M X 16 FLASH 1.8V PROM, 76 ns, PBGA63

File Size 1,223.53K  /  93 Page

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    Samsung
Part No. K9G4G08B0A K9G4G08U0A K9L8G08U1A-I
OCR Text ...ss : 30ns(Min.) * Memory Cell : 2bit / Memory Cell * Fast Write Cycle Time - Program time : 800s(Typ.) - Block Erase Time : 1.5ms(Typ.) * Command/Address/Data Multiplexed I/O Port * Hardware Data Protection - Program/Erase Lockout During Po...
Description Preliminary FLASH MEMORY
(K9G4G08U0A / K9G4G08B0A) Flash Memory

File Size 920.59K  /  44 Page

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    Samsung
Part No. K9GAG08B0M K9LBG08U1M
OCR Text ...ss : 25ns(Min.) * Memory Cell : 2bit / Memory Cell * Fast Write Cycle Time - Program time : 800s(Typ.) - Block Erase Time : 1.5ms(Typ.) * Command/Address/Data Multiplexed I/O Port * Hardware Data Protection - Program/Erase Lockout During Po...
Description FLASH MEMORY

File Size 1,263.99K  /  51 Page

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    R1EX24004ATAS0A R1EX24004ASAS0A

Renesas Electronics Corporation
Part No. R1EX24004ATAS0A R1EX24004ASAS0A
OCR Text ...ice is selected if the inputted 2bit device address code are equal to the corresponding hard-wired A2 , A1 pin status. The eighth bit of the device address word is the read/write(R/W) bit. A write operation is initiated if this bit is "0" a...
Description Two-wire serial interface 4k EEPROM (512-word × 8-bit)

File Size 138.28K  /  24 Page

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    R1EX24004ATAS0I R1EX24004ASAS0I

Renesas Electronics Corporation
Part No. R1EX24004ATAS0I R1EX24004ASAS0I
OCR Text ...ice is selected if the inputted 2bit device address code are equal to the corresponding hard-wired A2 , A1 pin status. The eighth bit of the device address word is the read/write(R/W) bit. A write operation is initiated if this bit is "0" a...
Description Two-wire serial interface 4k EEPROM (512-word × 8-bit)

File Size 140.59K  /  24 Page

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    Princeton Technology Corporation
Princeton Technology, Corp.
Part No. PT9120-QF24 PT9120-QF28
OCR Text ...ut saturation. The AGC range is 2bit output of the 2-bit A/D converter as the regulation variable and sets the gain of the 1st IF amplifier to achieve a logic HIGH duty cycle of 33% on the MAG bit output. The time constant of the AGC loop i...
Description GPS Receiver RF Front End IC GPS接收机射频前端IC

File Size 567.37K  /  18 Page

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