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New Jersey Semiconductor
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| Part No. |
C137N
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| OCR Text |
...80 0 90 0 100 0 120 0 t c = 1-25t.' , v d = 6 vdc , r l = ? 2 ohm s t c = -65c , v d = 1 2 vdc , r l = 1 2 ohm s ~ t c = +25c , v d = 6 vdc , r l = 1 2 ohm s t c = -65c, v d = 1 2 vdc , r[ _ = 1 2 ... |
| Description |
Thyristor SCR 800V 360A 3-Pin TO-48
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| File Size |
176.61K /
3 Page |
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it Online |
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Microsemi
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| Part No. |
ARF465AG ARF465BG
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| OCR Text |
...6 awg .4" id .5"l ~290 nhl4 -- 25t #24 awg .35"id ~2uh l5-- vk200-4b ferrite choke 3uh r1-r2 -- 51 ohm 0.5w carbon dut = arf465a/b hazardous material warning: the ceramic portion of the device between leads and mounting ? ange is b... |
| Description |
RF ISM VDMOS Power Transistors
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| File Size |
119.00K /
5 Page |
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it Online |
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New Jersey Semi-Conduct...
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| Part No. |
BU607
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| OCR Text |
...t's absolute maximum ratings(ta=25t:) symbol vcbo vcev vceo vebo ic i cm ib pc tj tstg parameter collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-... |
| Description |
Silicon NPN Power Transistor
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| File Size |
123.74K /
2 Page |
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it Online |
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New Jersey Semi-Conduct...
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| Part No. |
2SB855
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| OCR Text |
...5 electrical characteristics tc=25t: unless otherwise specified symbol v(br)ceo v(br)cbo v(br)ebo vce(sat) vbe(on) icbo hpe-1 flfe-2 fr parameter collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown vo... |
| Description |
Silicon PNP Power Transistor
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| File Size |
65.36K /
2 Page |
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it Online |
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New Jersey Semi-Conduct...
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| Part No. |
MUR860
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| OCR Text |
...w electrical characteristics(ta=25t:) (pulse test: pulse width=300 u s.duty cyde=s2%) symbol vf ir trr parameter maximum instantaneous forward voltage maximum instantaneous reverse current maximum reverse recovery time conditions if=8a vrrm... |
| Description |
Ultrafast Recovery Rectifier
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| File Size |
70.99K /
2 Page |
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it Online |
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New Jersey Semi-Conduct...
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| Part No. |
2SB925
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| OCR Text |
...5 electrical characteristics tc=25t; unless otherwise specified symbol v(br)ceo vce(sat) vee(sat) icbo iebo hpe-i hfe-2 cob fr parameter collector-emitter breakdown voltage collector-emitter saturation voltage base-emitter saturation voltag... |
| Description |
Silicon PNP Power Transistor
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| File Size |
121.60K /
2 Page |
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it Online |
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New Jersey Semi-Conduct...
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| Part No. |
TIC126D
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| OCR Text |
... electrical characteristics (tc=25t unless otherwise specified) symbol irrm idrm vtm igt vgt ih parameter repetitive peak reverse current repetitive peak off-state current on-state voltage gate-trigger current gate-trigger voltage holding c... |
| Description |
12Acontimunous on-state current
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| File Size |
75.32K /
1 Page |
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it Online |
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Price and Availability
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