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855500 C3303 A7500 M4744 2903002 SA101 LB101 300B1
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  250ua Datasheet PDF File

For 250ua Found Datasheets File :: 4148    Search Time::1.75ms    
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    Xian Semipower Electronic Technology Co., Ltd.
Part No. SWD4N65
OCR Text ...reakdown voltage v gs =0v, i d =250ua 650 - - v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c - 0.53 - v/ o c i dss drain to source leakage current v ds =650v, v gs =0v - - 1 ua v ds =520v, t c =125...
Description N-channel MOSFET (TO-251 , TO-252)

File Size 709.80K  /  7 Page

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    Xian Semipower Electronic Technology Co., Ltd.
Part No. SWD226N SW226N
OCR Text ...reakdown voltage v gs =0v, i d =250ua 600 - - v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c - 0.6 - v/ o c i dss drain to source leakage current v ds =600v, v gs =0v - - 1 ua v ds =480v, t c =125 ...
Description N-channel MOSFET

File Size 709.67K  /  7 Page

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    STS2320

SAMHOP[SamHop Microelectronics Corp.]
Part No. STS2320
OCR Text ...ol Condition VGS = 0V, ID = 250ua VDS = 16V, VGS = 0V VGS = 10V, VDS =0V VDS = VGS, ID = 250ua VGS = 4.5V, ID= 3A VGS = 2.5V, ID= 2A VDS = 5V, VGS = 4.5V VDS = 5V, ID =3A Min Typ C Max Unit 20 1 100 0.6 0.9 32 50 10 8 641 135 101 1....
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 547.60K  /  7 Page

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    AP22N13GH-HF

Advanced Power Electronics Corp.
Part No. AP22N13GH-HF
OCR Text ...reakdown voltage v gs =0v, i d =250ua 135 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =15a - - 75 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 5 v g fs forward transconductance v ds =10v, i d =15a - ...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 119.18K  /  4 Page

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    AP2318AGEN-HF AP2318AGEN-HF-14

Advanced Power Electronics Corp.
Advanced Power Electronics ...
Part No. AP2318AGEN-HF AP2318AGEN-HF-14
OCR Text ...reakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =4v, i d =500ma - - 1.5 v gs =2.5v, i d =200ma - - 2.5 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.3 - 1.2 v g fs forward trans...
Description Capable of 2.5V Gate Drive, Small Outline Package, Surface Mount Device

File Size 56.08K  /  4 Page

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    Xian Semipower Electronic Technology Co., Ltd.
Part No. SW2N65
OCR Text ...reakdown voltage v gs =0v, i d =250ua 600 - - v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c - 0.4 - v/ o c i dss drain to source leakage current v ds =650v, v gs =0v - - 1 ua v ds =520v, t c =125 ...
Description N-channel MOSFET

File Size 705.72K  /  7 Page

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    A-POWER[Advanced Power Electronics Corp.]
Part No. AP4575M
OCR Text ...2 Test Conditions VGS=0V, ID=250ua Min. 60 1 - Typ. 0.04 8 18 5 10 10 6 32 10 160 117 Max. Units 36 42 3 1 25 100 29 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 2...
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 127.22K  /  7 Page

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    H603AL HSMCCORP.-H603AL

Hi-Sincerity Mocroelectroni...
Hi-Sincerity Microelectronics
HSMC[Hi-Sincerity Mocroelectronics]
Part No. H603AL HSMCCORP.-H603AL
OCR Text ...e Threshold Voltage VDS=VGS, ID=250ua VDS=VGS, ID=10mA VGS=10V, ID=25A VGS=4.5V, ID=10A VGS=10V, VDS=10V VGS=4.5V, VDS=10V VDS=10V, ID=25A 1.1 1.4 60 15 3 3 0.018 0.022 0.029 0.040 26 1100 600 180 V A S pF pF pF Condition VGS=0V, ID=250ua ...
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 59.21K  /  5 Page

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    Xian Semipower Electronic Technology Co., Ltd.
Part No. SW2N60 SWD2N60
OCR Text ...reakdown voltage v gs =0v, i d =250ua 600 - - v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c - 0.65 - v/ o c i dss drain to source leakage current v ds =600v, v gs =0v - - 1 ua v ds =480v, t c =125...
Description N-channel MOSFET (TO-251 , TO-252)

File Size 681.52K  /  7 Page

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    SDG8204

SAMHOP[SamHop Microelectronics Corp.]
Part No. SDG8204
OCR Text ...ol Condition VGS = 0V, ID = 250ua VDS = 20V, VGS = 0V VGS = 8V,VDS = 0V VDS = VGS, ID = 250ua VGS = 4.0V, ID = 6.0A VGS =2.5V, ID = 5.2A VDS = 5V, VGS = 4.5V VDS = 10V, ID = 6.0A Min Typ C Max Unit 20 1 V uA 100 nA 0.7 28 34 20 17 7...
Description Dual N-Channel E nhancement Mode F ield E ffect Transistor

File Size 317.89K  /  5 Page

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