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http://
Fairchild Semiconductor
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| Part No. |
FDP025N06
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| OCR Text |
...te to Body Leakage Current ID = 250a, VGS = 0V, TC= 25oC ID = 250a, Referenced to 25oC VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, TC = 150oC V...300 ID, Drain Current [A] 400
1 0.0
0.2 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V... |
| Description |
N-Channel PowerTrench? MOSFET 60V, 265A, 2.5mΩ
N-Channel PowerTrench㈢ MOSFET 60V, 265A, 2.5mヘ
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| File Size |
552.99K /
8 Page |
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http://
Fairchild Semiconductor
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| Part No. |
FDP090N10
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| OCR Text |
...te to Body Leakage Current ID = 250a, VGS = 0V, TC = 25oC ID = 250a, Referenced to 25oC VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TC = 150o...300 1.25 -
A A V ns nC
Notes: 1: Repetitive Rating: Pulse width limited by maximum junction te... |
| Description |
N-Channel PowerTrench? MOSFET 100V, 75A, 9mΩ
N-Channel PowerTrench㈢ MOSFET 100V, 75A, 9mヘ
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| File Size |
465.82K /
8 Page |
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it Online |
Download Datasheet |
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FUJI[Fuji Electric]
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| Part No. |
2SK3775-01
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| OCR Text |
...VSD trr Qrr Test Conditions ID= 250a VGS=0V ID= 250a VDS=VGS VDS=300V VGS=0V VDS=240V VGS=0V VGS=30V VDS=0V ID=16A VGS=10V ID=16A VDS=25V VD...300 3.0
Typ.
Max.
5.0 25 250 100 0.13
Units
V V A nA S pF
12
0.10 24 1970 2955 335... |
| Description |
N-CHANNEL SILICON POWER MOSFET
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| File Size |
90.84K /
4 Page |
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it Online |
Download Datasheet |
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Fairchild Semiconductor
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| Part No. |
FDB024N06
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| OCR Text |
...te to Body Leakage Current ID = 250a, VGS = 0V, TC= 25oC ID = 250a, Referenced to 25oC VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, TC = 150oC V...300 ID, Drain Current [A] 400
1 0.0
0.2 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V... |
| Description |
N-Channel PowerTrench? MOSFET 60V, 265A, 2.4mΩ
N-Channel PowerTrench㈢ MOSFET 60V, 265A, 2.4mヘ
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| File Size |
572.48K /
8 Page |
View
it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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| Part No. |
IRFP150N FN4844 RFP150N
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| OCR Text |
...e Drain Current BVDSS IDSS ID = 250a, VGS = 0V (Figure 11) VDS = 95V, VGS = 0V VDS = 90V, VGS = 0V, TC = 150oC Gate to Source Leakage Curren...300 SINGLE PULSE TJ = MAX RATED TC = 25oC
(Continued)
300
ID, DRAIN CURRENT (A)
100
IAS... |
| Description |
44A/ 100V/ 0.030 Ohm/ N-Channel Power MOSFET
44A, 100V, 0.030 Ohm, N-Channel Power MOSFET
From old datasheet system
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| File Size |
126.46K /
10 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
HUF75939S3ST HUF75939P3 HUF75939P3NL
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| OCR Text |
...e Drain Current BVDSS IDSS ID = 250a, VGS = 0V (Figure 11) VDS = 190V, VGS = 0V VDS = 180V, VGS = 0V, TC = 150oC Gate to Source Leakage Curr...300
IDM, PEAK CURRENT (A)
100
TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS ... |
| Description |
22A, 200V, 0.125 Ohm, N-Channel, UltraFETPower MOSFET
22A 200V 0.125 Ohm N-Channel UltraFET Power MOSFET
22A, 200V, 0.125 Ohm, N-Channel, UltraFET Power MOSFET
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| File Size |
192.70K /
10 Page |
View
it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
HUF75842P3 HUF75842S3S HUF75842P3NL HUF75842S3ST HUF75842S3SNL
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| OCR Text |
...e Drain Current BVDSS IDSS ID = 250a, VGS = 0V (Figure 11) VDS = 140V, VGS = 0V VDS = 135V, VGS = 0V, TC = 150oC Gate to Source Leakage Curr...300 IAS, AVALANCHE CURRENT (A) SINGLE PULSE TJ = MAX RATED TC = 25oC
(Continued)
300
ID, DRAI... |
| Description |
43A, 150V, 0.042 Ohm, N-Channel, UltraFET Power MOSFET
43A 150V 0.042 Ohm N-Channel UltraFET Power MOSFET
43A, 150V, 0.042 Ohm, N-Channel,UltraFET Power MOSFET
43A, 150V, 0.042 Ohm, N-Channel, UltraFETPower MOSFET
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| File Size |
194.63K /
10 Page |
View
it Online |
Download Datasheet |
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