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  200-column Datasheet PDF File

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    HM514170DJ-6 HM514170DJ-7 HM514170DLJ-7 HM514170DLJ-8 HM514170DLTT-6 HM514170DLTT-8 HM514170DTT-6 HM514170DTT-7 HM514170

Hitachi Semiconductor
Part No. HM514170DJ-6 HM514170DJ-7 HM514170DLJ-7 HM514170DLJ-8 HM514170DLTT-6 HM514170DLTT-8 HM514170DTT-6 HM514170DTT-7 HM514170DTT-8 HM514170D HM514170DJ-8 HM514170DLJ-6 HM514270D HM514270DJ-6 HM514270DJ-8 HM514270DLJ-6 HM514270DLJ-7 HM514270DLJ-8 HM514270DLTT-6 HM514270DLTT-7 HM514270DLTT-8 HM514270DTT-6 HM514170DLTT-7 HM51S4170D HM51S4170DJ-6 HM51S4170DJ-7 HM51S4170DJ-8 HM51S4170DLJ-6 HM51S4170DLJ-7 HM51S4170DLJ-8 HM51S4170DLTT-6 HM51S4170DLTT-7 HM51S4170DLTT-8 HM51S4170DTT-6 HM51S4170DTT-7 HM51S4170DTT-8 HM51S4270D HM51S4270DJ-6 HM51S4270DJ-7 HM51S4270DJ-8 HM51S4270DLJ-6 HM51S4270DLJ-7 HM51S4270DLJ-8 HM51S4270DLTT-6 HM51S4270DLTT-7 HM51S4270DLTT-8 HM51S4270DTT-6 HM51S4270DTT-7 HM51S4270DTT-8 HM514270DJ-7 HM514270DTT-7 HM514270DTT-8
OCR Text ...t (L-version) I CC2 -- 200 -- 200 -- 200 RAS-only refresh current*2 I CC3 -- -- -- -- 135 135 150 300 --...Column address setup time Column address hold time RAS to CAS delay time RAS to column address delay...
Description 262,144-word x 16-bit Dynamic RAM

File Size 270.12K  /  33 Page

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    Mosel Vitelic
Part No. V54C365164VL
OCR Text 200/166/143 mhz 3.3 volt 4m x 16 synchronous dram 4banksx1mbitx16 v54c365164vd(l) rev. 1.3 september 2001 preliminary 45567 system frequency...column address every clk (1-n rule) suspend mode and power down mode auto refresh and self refre...
Description HIGH PERFORMANCE 225/200/166/143 MHz 3.3 VOLT 4M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16

File Size 706.89K  /  56 Page

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    HY5756820C HY57V56820CLT-P HY57V56820CT-H HY57V56820CT-P HY57V56820CT-S HY57V56820CLT-6 HY57V56820CT HY57V56820CT-8 HY57

Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
Part No. HY5756820C HY57V56820CLT-P HY57V56820CT-H HY57V56820CT-P HY57V56820CT-S HY57V56820CLT-6 HY57V56820CT HY57V56820CT-8 HY57V56820CT-K HY57V56820CT-6 HY57V56820CLT-8 HY57V56820CLT-H HY57V56820CLT-K HY57V56820CLT-S
OCR Text ...130 220 130 220 3 1.5 130 200 120 200 110 200 mA mA mA mA 1 2 3 4 Note : 1.IDD1 and IDD4 depend on output loading and c...Column Address, Opcode = Operand Code, NOP = No Operation Rev. 0.4 / July 2003 11 HY57V5682...
Description 4 Banks x 8M x 8Bit Synchronous DRAM 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
SDRAM - 256Mb

File Size 75.83K  /  12 Page

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    LC7874E

Sanyo Semicon Device
Part No. LC7874E
OCR Text ...0.4 V VDD - 1 VDD V -5 A 30 100 200 A 5 A Ratings min typ max Unit No. 5521-2/22 LC7874E Timing Characteristics (Microcontroller Inter...Column address setup time Column address hold time Read command setup time Read command hold time Re...
Description
File Size 237.69K  /  22 Page

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    K4S281632F-UC75 K4S280432F-UC K4S280832F-UC75 K4S280832F-UL75 K4S281632F-UL75 K4S280432F-UC75 K4S280432F-UL75 K4S281632F

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S281632F-UC75 K4S280432F-UC K4S280832F-UC75 K4S280832F-UL75 K4S281632F-UL75 K4S280432F-UC75 K4S280432F-UL75 K4S281632F-UC60 K4S281632F-UC60_75 K4S281632F-UL60 K4S281632F-UL60_75 K4S281632F-UC60/75 K4S281632F-UL60/75 K4S280432F-UC750 K4S281632F-UL750
OCR Text ...TA = 23C, f = 1MHz, VREF =1.4V 200 mV) Pin Symbol CCLK CIN CADD COUT Min 2.5 2.5 2.5 4.0 Max 3.5 3.8 3.8 6.0 Unit pF pF pF pF Note RAS, ...column address change. 4. In case of row precharge interrupt, auto precharge and read burst stop. 5....
Description 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 128Mb的的F -模与铅SDRAM的规4 TSOP-II免费(符合RoHS
CAP 0.1UF 100V 10% X7R SMD-1206 TR-7-PL 3K/REEL

File Size 142.90K  /  14 Page

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    Panasonic, Corp.
Part No. IC43R16160-7TG IC43R16160-6TG
OCR Text ...tes with system frequency up to 200 mhz data mask for write control four banks controlled by ba0 & ba1 programmable cas latency: 2, 2.5,...column address strobe we write enable dqs (udqs, ldqs) data strobe (bidirectional) a 0 ?a 12 address...
Description 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM 4米16位4个银行(256兆)DDR SDRAM内存

File Size 1,271.25K  /  56 Page

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    NT512D72S8PB0G

ETC
Part No. NT512D72S8PB0G
OCR Text ... unit f ck clock frequency 200 166 133 mhz t ck clock cycle 5 6 7.5 ns f dq dq burst frequency 400 333 266 mhz  int...column address strobe v dd power we write enable v ddq supply voltage for dqs s0 , s1 chi...
Description 184 pin Unbuffered DDR DIMM

File Size 414.92K  /  28 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KMM378S1723T
OCR Text ...4-pin tsop package mounted on a 200-pin glass-epoxy substrate. two 0.1uf deco- pling capacitors are mounted on the printed circuit board for...column address) burst length (1, 2, 4, 8 & full page) data scramble (sequential & interleav...
Description 16Mx72 SDRAM DIMM(16M x 72 动RAM模块)

File Size 159.03K  /  11 Page

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    Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS A G
Part No. DLR5736 DLR5735 DLG5735 DLG5736 SIEMENSAG-DLG5735
OCR Text ... .505 (12.8) max. .300 (7.62) .200 (5.08) .100 (2.54) luminous intensity code hue code row 2 row 3 row 4 row 5 row 6 row 7 .200 (5.08...Column Select * End & Side Stackable * Rugged Encapsulation (Filled Reflector Construction) * Compat...
Description From old datasheet system
17.5 mm Single Character 5x7 Dot Matrix Alphanumeric Display

File Size 47.62K  /  2 Page

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    Hitachi,Ltd.
Part No. HM514260CLJ-7 HM514260CTT-7 HM514260CLJ-6R HM51S4260CLJ-6R HM51S4260CJ-6 HM51S4260CJ-6R HM51S4260CTT-8 HM51S4260CLJ-8 HM51S4260CLJ-7 HM51S4260CJ-8 HM514260CLTT-6R HM514260CTT-6R HM51S4260CTT-6R
OCR Text ...t (L-version) I CC2 -- 200 -- 200 -- 200 A RAS-only refresh current*2 Standby current *1 CAS-before-RAS refresh current *2...Column address setup time Column address hold time RAS to CAS delay time RAS to column address delay...
Description 262,144-word x 16-bit Dynamic Random Access Memory

File Size 266.83K  /  27 Page

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