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  2.32.7ghz Datasheet PDF File

For 2.32.7ghz Found Datasheets File :: 356    Search Time::1.375ms    
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    TGA2701

TriQuint Semiconductor
Part No. TGA2701
OCR Text ...chnology Chip Dimensions 3.80 x 2.61 x 0.10 mm (0.150 x 0.103 x 0.004 in) Primary Applications Product Description The TriQuint TGA2701 ...32 31 30 7 7.2 7.4 7.6 7.8 8 8.2 8.4 8.6 Frequency (GHz) 5V 7V Lead-Free & RoHS compliant. ...
Description 7 - 8.5GHz High Power Amplifier

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    TGA2702-SM

TriQuint Semiconductor
Part No. TGA2702-SM
OCR Text 2.5GHz WiMAX Driver / Power Amplifier Key Features TGA2702-SM * 2.3-2.8 GHz Bandwidth * 2.5% EVM @ 23 dBm Pout (2.6GHz 802.11g OFDM w...32 31 30 29 28 27 26 25 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 Frequency (GHz) P2dB P1dB Note: Thi...
Description 2.5GHz WiMAX Driver / Power Amplifier

File Size 285.89K  /  14 Page

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    TGA2703-SM

TriQuint Semiconductor
Part No. TGA2703-SM
OCR Text ...ominal Gain 30 dBm Nominal P1dB 2.5% EVM at 22 dBm output power 13 dB step attenuator function Power sample port -1.5V Vg voltage to shut do...32 31 30 29 28 27 26 25 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 Frequency (GHz) P2dB P1dB Note: Th...
Description 3.5GHz WiMAX Driver / Power Amplifier

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    CREE[Cree, Inc]
Part No. CGH27030F
OCR Text ...h makes the CGH27030F ideal for 2.32.9GHz WiMAX and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package. Package Type : 440166 PN: CGH2703 0F Typical Performance Over 2.3-2.7GHz Parameter Small Si...
Description 30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX

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    CREE[Cree, Inc]
Part No. CGH35030F
OCR Text ...9 1.9 20.8 11.4 11.1 1.9 20.8 8.2 (TC = 25C) of Demonstration Amplifier 3.6 GHz 10.7 2.0 22.7 4.0 3.7 GHz 10.8 2.0 23.9 3.7 Units dB ...32 -21.83 -22.31 -22.77 -23.21 -23.62 -24.01 -24.37 -24.70 Mag S22 0.6269 0.6531 0.6633 0.6685 0....
Description 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX

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    CALMIRCO[California Micro Devices Corp]
Part No. CM1452-08CP CM1452 CM1452-04CP CM1452-06CP
OCR Text ...5kV ESD protection (IEC 61000-4-2, contact discharge) 30kV ESD protection (HBM) Greater than 30dB of attenuation at 1GHz Chip Scale Package ...32 16 Typ. 17 40 20 Max. 48 24 Unit nH pF pF Channel Inductance Total Channel Cap...
Description LCD & Camera EMI Filter Array with ESD Protection

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    WJCI[WJ Communication. Inc.]
Part No. CV221-2A_07 CV221-2A CV221-2AF CV221-2APCB240 CV221-2A07
OCR Text 2.7 GHz Dual-Branch Downconverter Product Description The CV221-2A is a dual-channel high-linearity downconverter designed to meet the d...32 30 28 26 24 -40 C +25 C +85 C 9 8 7 6 -40 C +25 C +85 C 5 1800 1900 2000 2100 ...
Description 1.9 - 2.7 GHz Dual-Branch Downconverter

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    EUDYNA[Eudyna Devices Inc]
Part No. FLL600IQ-3
OCR Text ...DS) should not exceed 12 volts. 2. The forward and reverse gate currents should not exceed 78 and -32 mA respectively with gate resistance of 25. 3. The operating channel temperature (Tch) should not exceed 145C. ELECTRICAL CHARACTERISTI...
Description L-Band Medium & High Power GaAs FET

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    FLM5964-6F

List of Unclassifed Manufacturers
ETC[ETC]
Part No. FLM5964-6F
OCR Text ...= 25C Condition Rating 15 -5 31.2 -65 to +175 175 Unit V V W C C Eudyna recommends the following conditions for the reliable operation of...32 30 28 26dBm 30 15 35 5.9 6.0 6.1 6.2 6.3 6.4 18 20 22 24 26 28 30 ...
Description C-Band Internally Matched FET

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    EUDYNA[Eudyna Devices Inc]
Part No. FLM5972-12F
OCR Text ...DS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 32.0 and -5.6 mA respectively with gate resistance of 50. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C) Item Saturated Drain Current Tr...
Description C-Band Internally Matched FET

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