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2.11.00.6 Datasheet PDF File

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				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3708 IRF3708L IRF3708S
OCR Text	...ts --- V --- V/C 12.0 13.5 m 29 2.0 V 20 A 100 200 nA -200 Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1mA VGS = 10V, ID = 15A VG...11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF3708/3...
Description	Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) 功率MOSFET（减振钢板基本\u003d 30V的，的Rdson）最大值\u003d 12mohm，身份证\u003d 62A条） Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)
File Size	137.00K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3710L IRF3710S
OCR Text	...istance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF3710L) is available for lowprofile...11 ) Pulse width 300s; duty cycle 2%. Uses IRF3710 data and test conditions VDD = 25V, s...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.025ohm，身份证\u003d 57A条） Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A) Power MOSFET(Vdss=100V Rds(on)=0.025ohm Id=57A)
File Size	180.61K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3710 IRF3710PBF
OCR Text	...nche Energy Min. 100 --- --- 2.0 32 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Max. Units Conditions --- V VG...11) ISD 28A, di/dt 380A/s, VDD V(BR)DSS, TJ 175C Starting TJ = 25C, L = 0.70mH Puls...
Description	Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 23mohm，身份证\u003d 57A条） Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A) 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	92.57K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3717
OCR Text	... D D D D ID 20A S S 1 2 3 4 8 7 Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Volta...11.3607 21.8639 15.3721 P DM t1 0.000277 0.103855 1.362000 39.60000 i (sec) 0.1 0.01 ...
Description	HEXFETPower MOSFET
File Size	246.14K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF3808L IRF3808S RF3808S
OCR Text	...apacitance U Min. 75 --- --- 2.0 100 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.086 5.9 --...11). R Starting TJ = 25C, L = 0.130mH RG = 25, IAS = 82A. (See Figure 12). S ISD 82A, di/dt 310A/s...
Description	75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package AUTOMOTIVE MOSFET Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A) Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET（减振钢板基本\u003d 75V的，的Rdson）\u003d 0.007ohm，身份证\u003d 106A章?
File Size	159.77K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3808 IRF3808PBF
OCR Text	...screw Max. 140V 97V 550 330 2.2 20 430 82 See Fig.12a, 12b, 15, 16 5.5 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units ...11). R Starting TJ = 25C, L = 0.130mH RG = 25, IAS = 82A. (See Figure 12). S ISD 82A, di/dt 310A/s...
Description	75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?
File Size	129.31K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305
OCR Text	...apacitance Min. -55 --- --- -2.0 8.0 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.034 --- --- --- --- -...11 ) ISD -16A, di/dt -280A/s, VDD V(BR)DSS, TJ 175C VDD = -25V, starting TJ = 25C, L = ...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	120.44K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF530A
OCR Text	... = 0.11 ID = 14 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Value 100 ...
Description	N-CHANNEL POWER MOSFET Advanced Power MOSFET
File Size	253.11K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF530L IRF530NS IRF530NL
OCR Text	...istance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF530NL) is available for low-profil...11 VGS = 10V, ID = 9.0A 4.0 V VDS = VGS, ID = 250A --- S VDS = 50V, ID = 9.0A 25 VDS = 100V, VGS =...
Description	Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A) HEXFET Power MOSFET Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)
File Size	174.65K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	IRF530N
OCR Text	...aded package. PINNING PIN 1 2 3 tab gate drain source drain DESCRIPTION SOT78 (TO220AB) tab drain 123 gate source drain LIMITI...11 10 0.05 6 36 18 12 3.5 4.5 7.5 633 103 61 4 6 110 275 100 10 250 40 5.6 19 V V V V V m m S nA A A...
Description	N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体 N-channel TrenchMOS TM transistor
File Size	95.87K / 7 Page	View it Online	Download Datasheet

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