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  120v.collector-base Datasheet PDF File

For 120v.collector-base Found Datasheets File :: 1290    Search Time::2.125ms    
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    CENTRAL[Central Semiconductor Corp]
Part No. CXT5401E
OCR Text ... noted) TEST CONDITIONS MIN VCB=120V VCB=120V, TA=100C VEB=3.0V IC=100A IC=1.0mA IE=10A IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IC=50...COLLECTOR 3) BASE MARKING CODE: FULL PART NUMBER R0 (10-May 2006) ...
Description ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR

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    CXT5401

CENTRAL[Central Semiconductor Corp]
Part No. CXT5401
OCR Text ...EST CONDITIONS MIN MAX ICBO VCB=120V 50 ICBO VCB=120V, TA=100C 50 BVCBO IC=100A 160 BVCEO IC=1.0mA 150 BVEBO IE=10A 5.0 VCE(SAT) IC=10mA, IB...COLLECTOR 3) BASE R3 ( 20-December 2001) ...
Description SURFACE MOUNT PNP SILICON TRANSISTOR

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    DMMT55512

Diodes Incorporated
Part No. DMMT55512
OCR Text ... i cbo ? 50 na a v cb = 120v, i e = 0 v cb = 120v, i e = 0, t a = 100 c emitter cutoff current i ebo ? 50 na v eb = 4....collector-emitter saturation voltage v ce(sat) ? 0.15 0.20 v i c = 10ma, i b = 1.0ma i c ...
Description MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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    2SD1436

Inchange Semiconductor Company Limited
Part No. 2SD1436
OCR Text ...down voltage- : v (br)ceo = 120v(min) complement to type 2sb1032 applications designed for power switching applications. ...collector-base voltage 120 v v ceo collector-emitter voltage 120 v v ebo emitter-base voltag...
Description isc Silicon NPN Darlington Power Transistor

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    2SA965TM

SeCoS Halbleitertechnologie GmbH
Part No. 2SA965TM
OCR Text 120v pnp plastic encapsulated transistor elektronische bauelemente 17-aug-2011 rev. a page 1 of 1 http://www.secosgmbh.com/ an...collector 2 rohs compliant product a suffix of -c specifies halogen & lead-free features...
Description -0.8A , -120V PNP Plastic Encapsulated Transistor

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    2SC4132 2SD1857 2SC4132T100R

ROHM[Rohm]
Part No. 2SC4132 2SD1857 2SC4132T100R
OCR Text 120V, 1.5A) 2SC4132 / 2SD1857 Features 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency. (fT = 80MHz) 4) Complements the 2SB1236. External dimensions (...
Description Power Transistor (120V, 1.5A)

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    FCX1051A FCX1051ATA

Diodes Incorporated
Part No. FCX1051A FCX1051ATA
OCR Text ...rrent i cbo 0.3 10 na v cb = 120v emitter cut-off current i ebo 0.3 10 na v eb = 4v collector emitter cut- off current i ces 0.3 10 na v ces = 120v collector-emitter saturation voltage v ce(sat) 17 25 mv i c = 0.2a, i b =...
Description SOT89 NPN medium power transistor

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    2N6577 2N6576

Inchange Semiconductor Company Limited
Part No. 2N6577 2N6576
OCR Text ...r cut-off current 2n6578 v ce =120v; i b =0 1.0 ma 2n6576 v cb =60v; i e =0 2n6577 v cb =90v; i e =0 i cbo collector cut-off current 2n6578 v cb =120v; i e =0 0.5 ma i ebo emitter cut-off current v eb =7v; i c =0 7.5 ma...
Description Silicon NPN Power Transistors

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    KTC4077 KTC407708

KEC(Korea Electronics)
Part No. KTC4077 KTC407708
OCR Text ...atures ? high voltage : v ceo =120v. ? excellent h fe linearity : h fe (0.1ma)/h fe (2ma)=0.95(typ.). ? high h fe : h fe =200 ?- 700. ? lo...collector usm 2.00 0.20 1.25 0.15 0.90 0.10 0.3+0.10/-0.05 2.10 0.20 0.65 0.15+0.1/-0.06 1....
Description EPITAXIAL PLANAR NPN TRANSISTOR

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    MBT5401

ETC[ETC]
Part No. MBT5401
OCR Text ...C VCE 10V, I C VCB 10V, I E VCB 120V, I E VCB 120V, I E I C 10mA, I B I C 50mA, I B I C 10mA, I B I C 50mA, I B I C 100uA I E I C 1mA, I B I C 0mA, I E VCB 10V, I E 1mA 10mA 50mA 10mA 0mA, f 1MHz 0mA 0mA, Tamb 150 C 1mA 5mA 1mA 5mA 0 0 10u...
Description SILICON P-N-P HIGH-VOLTAGE TRANSISTOR

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For 120v.collector-base Found Datasheets File :: 1290    Search Time::2.125ms    
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