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  1200v 25a Datasheet PDF File

For 1200v 25a Found Datasheets File :: 699    Search Time::3.484ms    
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    IHW15N120R2

Infineon Technologies AG
Part No. IHW15N120R2
OCR Text ...n off safe operating area (VCE 1200v, Tj 175C) Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Diode su...25a 10 20 30 40 50 60 70 IC, COLLECTOR CURRENT Figure 13. Typical turn-off e...
Description Reverse Conducting IGBT with monolithic body diode

File Size 361.77K  /  12 Page

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    IHW15N120R

Infineon Technologies AG
Part No. IHW15N120R
OCR Text ...pplications Type IHW20N120R VCE 1200v IC 20A VCE(sat),Tj=25C 1.65V Tj,max 175C Marking H20R120 Package PG-TO-247-3-21 G E PG-TO-247...25a 30 60 90 IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of co...
Description Reverse Conducting IGBT with monolithic body diode

File Size 367.22K  /  12 Page

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    INFINEON[Infineon Technologies AG]
Part No. SIDC14D120H6 Q67050-A4096-A102
OCR Text 1200v EMCON technology 120 m chip * soft, fast switching * low reverse recovery charge * small temperature coefficient A This chip is us...25a Die Size 3.8 x 3.8 mm2 Package sawn on foil Ordering Code Q67050-A4096A102 MECHANICA...
Description Fast switching diode chip in EMCON-Technology

File Size 65.29K  /  4 Page

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    SIGC42T120CS Q67050-A4048-A001

INFINEON[Infineon Technologies AG]
Part No. SIGC42T120CS Q67050-A4048-A001
OCR Text 1200v NPT technology * 180m chip * low turn-off losses * short tail current * positive temperature coefficient * easy paralleling This ch...25a Die Size 6.59 x 6.49 mm2 Package sawn on foil Ordering Code Q67050A4048-A001 MECHANI...
Description IGBT Chip in NPT-technology

File Size 64.11K  /  4 Page

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    SIGC42T120C Q67041-A4724-A001

INFINEON[Infineon Technologies AG]
Part No. SIGC42T120C Q67041-A4724-A001
OCR Text 1200v NPT technology * 200m chip * low turn-off losses * positive temperature coefficient * easy paralleling This chip is used for: * BUP...25a Die Size 6.59 x 6.49 mm2 Package sawn on foil Ordering Code Q67041A4724-A001 MECHANI...
Description IGBT Chip in NPT-technology

File Size 64.08K  /  4 Page

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    BSM25GD120DLCE3224

eupec GmbH
Part No. BSM25GD120DLCE3224
OCR Text ...= 25C,VCE = 25V, VGE = 0V VCE = 1200v, VGE = 0V, Tvj = 25C VCE = 1200v, VGE = 0V, Tvj = 125C VCE = 0V, VGE = 20V, Tvj = 25C Cres ICES ...25a, VCC = 600V VGE = 15V, RG = 33, T vj = 25C VGE = 15V, RG = 33, T vj = 125C Anstiegszeit (indukti...
Description IGBT-Module

File Size 118.23K  /  9 Page

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    IRGVH50F

International Rectifier
Part No. IRGVH50F
OCR Text ... C Fast Speed IGBT VCES = 1200v G E VCE(on) max = 2.9V @VGE = 15V, IC = 25a Description n-channel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparab...
Description INSULATED GATE BIPOLAR TRANSISTOR
1200v DISCRETE Hi-Rel IGBT in a TO-258AA package

File Size 533.02K  /  8 Page

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    Crydom Co
Part No. LR1200XXX
OCR Text 1200v Transient Capability * SCR Output * PCB Mount * Low Profile MODEL NUMBERS CURRENT DERATING CURVES 25a 30 1C/W 3C/W 2C/W Series LR Manufactured in Crydom's ISO 9001 Certified facility for optimum product performance and relia...
Description 25-40 Amp / 120/240/480 Vac-AC Output

File Size 15.76K  /  1 Page

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    CRNA25-1200 CRNA25-1200PT CRNA25-800PT CRNA25-400 CRNA25-400PT CRNB25-400 CRNB25-400PT CRNA25-600 CRNA25-600PT CRNB25-80

List of Unclassifed Manufacturers
ETC[ETC]
Part No. CRNA25-1200 CRNA25-1200PT CRNA25-800PT CRNA25-400 CRNA25-400PT CRNB25-400 CRNB25-400PT CRNA25-600 CRNA25-600PT CRNB25-800PT CRNA25 CRNA25-800 CRNB25-1200 CRNB25-1200PT CRNB25-600 CRNB25-600PT CRNB25-800
OCR Text ...ed Tab > VR/VRRM 400, 600, 800, 1200v CRNA/CRNB25 25amp - 400/600/800/1200v - RECTIFIER Absolute Maximum Ratings RMS On-State Curren...25a 15.9A 300A 350A 508A2s -40 to +150C -40 to +125C 2500 VRMS Storage Temperature Range Operatin...
Description 25amp - 400/600/800/1200v - RECTIFIER

File Size 103.33K  /  2 Page

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    IXBH42N170

IXYS Corporation
Part No. IXBH42N170
OCR Text ...ductive load VGE = 15 V, VCES = 1200v, TJ = 125C RG = 10 non repetitive TC = 25C Maximum Ratings 1700 1700 20 30 75 42 180 ICM = VCES = ...25a, VGE = 0 V, -diF/dt = 50 A/us = 100V Min Recommended Footprint IXYS reserves the right to ...
Description High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

File Size 577.60K  /  5 Page

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For 1200v 25a Found Datasheets File :: 699    Search Time::3.484ms    
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