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  115-ohm Datasheet PDF File

For 115-ohm Found Datasheets File :: 3472    Search Time::1.703ms    
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    2N4123 2N4124 2N4123-D 2N4123RLRA 2N4123RLRM

ONSEMI[ON Semiconductor]
Part No. 2N4123 2N4124 2N4123-D 2N4123RLRA 2N4123RLRM
OCR Text ...250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- A R P SEATING PLANE B F ...
Description General Purpose Transistors NPN Silicon
General Purpose Transistors(NPN Silicon)
General Purpose Transistor - NPN

File Size 162.11K  /  6 Page

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    DSM390S2858CT1 M390S2858CT1 M390S2858CT1-C7A M390S2858CT1-C7C DS_M390S2858CT1

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. DSM390S2858CT1 M390S2858CT1 M390S2858CT1-C7A M390S2858CT1-C7C DS_M390S2858CT1
OCR Text ... **SCL VDD Pin Back Pin 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 Back...ohm Resistor on PCB. So if REGE of module is floating, this module will be operated as registered mo...
Description SDRAM DIMM SDRAM的内
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet

File Size 238.33K  /  12 Page

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    HAL535SF-A HAL535SF-E HAL535SF-K HAL535UA-A HAL535UA-E HAL535UA-K HAL525 HAL525SF-A HAL525SF-E HAL525SF-K HAL525UA-A HAL

ETC[ETC]
Part No. HAL535SF-A HAL535SF-E HAL535SF-K HAL535UA-A HAL535UA-E HAL535UA-K HAL525 HAL525SF-A HAL525SF-E HAL525SF-K HAL525UA-A HAL525UA-E HAL525UA-K
OCR Text ...ffset compensation at typically 115 kHz - operates from 3.8 V to 24 V supply voltage - operates with static magnetic fields and dynamic magn...Ohm, CL = 20 pF Fiberglass Substrate 30 mm x 10 mm x 1.5 mm, pad size (see Fig. 3-3) tr tf RthJSB...
Description Hall Effect Sensor IC

File Size 184.30K  /  21 Page

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    HMC388LP4

HITTITE[Hittite Microwave Corporation]
Part No. HMC388LP4
OCR Text .../Hz) -90 -95 -100 -105 -110 -115 -120 0 1 2 3 4 5 6 7 TUNING VOLTAGE (VOLTS) 8 9 10 10 KHz Offset 100 KHz Offset +25 C +85 C -40 C ...ohm impedance while the package ground leads and exposed paddle should be connected directly to the ...
Description MMIC VCO w/ BUFFER AMPLIFIER, 3.15 - 3.4 GHz

File Size 266.84K  /  6 Page

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    HUF75639S3R4851 HUF75639S3NL

FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Part No. HUF75639S3R4851 HUF75639S3NL
OCR Text ...d HUF75639S3R4851 UNITS V V V A 115 115 20 56 Figure 4 Figures 6, 14, 15 200 1.35 -55 to 175 300 260 W W/oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description Global Limit Switches Series GLS: Wobble - Coil Spring, 2NC 2NO DPDT Snap Action, 20 mm
56A 115V 0.025 Ohm N-Channel UltraFET Power MOSFET
56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET
56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs
56A/ 115V/ 0.025 Ohm/ N-Channel UltraFET Power MOSFET

File Size 201.67K  /  10 Page

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    MOTOROLA[Motorola, Inc]
MOTOROLA [Motorola, Inc]
Part No. MRF373ASR1 MRF373AR1 MRF373A
OCR Text ...0.004 0.006 0.057 0.067 0.085 0.115 0.355 0.365 0.357 0.363 0.227 0.23 0.225 0.235 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 9.53 9.78 5.72 5.97 2.67 3.94 5.33 5.59 0.89 1.14 0.10 0.15 1.45 1.70 2.16 2.92 9.02 9.27 9.07 9.22 5.77...
Description MRF373AR1, MRF373ALSR1 470-860 MHz, 75 W, 32 V Lateral N-Channel Broadband RF Power MOSFETs
RF POWER FIELD EFFECT TRANSISTORS

File Size 332.33K  /  8 Page

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    MTP2955 MTP2955D MTP2955V MTP2955V_D ON2574 ON2573

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTP2955 MTP2955D MTP2955V MTP2955V_D ON2574 ON2573
OCR Text ...H ta tb QRR -- -- -- -- 1.8 1.5 115 90 25 0.53 3.0 -- -- -- -- -- C ns Vdc -- -- -- -- -- -- -- -- 15 50 24 39 19 4.0 9.0 7.0 30 100 50 80 3...Ohm (Cpk 2.0) (3) V(BR)DSS 60 -- IDSS -- -- IGSS -- -- -- -- 10 100 100 nAdc -- 58 -- -- Vdc mV/C A...
Description TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM TMOS是功率场效应晶体02安培的RDSon)\u003d 0.230欧姆
From old datasheet system

File Size 113.25K  /  8 Page

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    RFD8P05 RFD8P05SM RFP8P05 FN2384

INTERSIL[Intersil Corporation]
Part No. RFD8P05 RFD8P05SM RFP8P05 FN2384
OCR Text ... FOR CONSTANT GATE CURRENT 4-115 RFD8P05, RFD8P05SM, RFP8P05 Test Circuits and Waveforms VDS tAV L VARY tP TO OBTAIN REQUIRED PEAK IAS RG 0 + VDD VDD 0V VGS DUT tP IAS 0.01 IAS tP BVDSS VDS FIGURE 12. UNCLAMPED EN...
Description 8A/ 50V/ 0.300 Ohm/ P-Channel Power MOSFETs
8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs
From old datasheet system

File Size 51.28K  /  6 Page

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    32CTQ030-1 32CTQ030S 32CTQ030 32CTQ030STRL 32CTQ030STRR

IRF[International Rectifier]
Part No. 32CTQ030-1 32CTQ030S 32CTQ030 32CTQ030STRL 32CTQ030STRR
OCR Text ...50 13 3 A 50% duty cycle @ TC = 115 C, rectangular wave form 5s Sine or 3s Rect. pulse 10ms Sine or 6ms Rect. pulse Following any rated load...ohm + C UR RE N T M O N ITO R Fig. 8 - Unclamped Inductive Test Circuit (2) Formula used: ...
Description    SCHOTTKY RECTIFIER
30V 30A Schottky Common Cathode Diode in a D2-Pak package
30V 30A Schottky Common Cathode Diode in a TO-262 package
SCHOTTKY RECTIFIER 32 Amp
32 Amp Schottky Rectifier(32 A ????烘?娴??)

File Size 197.43K  /  6 Page

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    AH118 AH118-89 AH118-89PCB1900 AH118-89PCB2140 AH118-89PCB900

WJ Communications
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
Part No. AH118 AH118-89 AH118-89PCB1900 AH118-89PCB2140 AH118-89PCB900
OCR Text ....79 137.57 132.05 126.72 121.50 115.58 110.41 105.30 100.11 21.74 19.63 18.22 17.13 15.99 14.97 13.84 12.76 11.71 10.63 9.75 8.88 8.00 7....ohm resistor - can be removed (with a thru line) in the final circuit layout. PORT P=1 Z=50 Ohm CAP ...
Description 1/4 Watt/ High Linearity InGaP HBT Amplifier
1/4 Watt, High Linearity InGaP HBT Amplifier 1 / 4瓦,高线性InGaP HBT功率放大

File Size 172.68K  /  6 Page

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For 115-ohm Found Datasheets File :: 3472    Search Time::1.703ms    
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