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For 1012-bit Found Datasheets File :: 444 Search Time::1.282ms
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				Murata Power Solutions Inc.
Part No.	HDAS-16MC HDAS-16/883 HDAS-16MM
OCR Text	...n = 1 + (20k/RGAIN) -- -- 0.1 % 1012 -- Ohms pA -- -- -- -- -- -- -- -- 50 33 9 -- -- -- -- -- 6 -- 66 -- 10 15 500 1 1 0.01 8 10 -...Bit, 50kHz, Complete Data Acquisition Systems POWER REQUIREMENTS Power Supply Ranges +15V Supply -1...
Description
File Size	171.78K / 7 Page	View it Online	Download Datasheet

				Aeroflex Circuit Technology
Part No.	5962-0323601QXA 5962-0323601QXC 5962-0323601QXX 5962-0323601VXA 5962-0323601VXC 5962-0323601VXX 5962-0323602QXA 5962-0323602QXC 5962-0323602QXX 5962-0323602VXA 5962-0323602VXC 5962-0323602VXX UT8R128K32-15WWA UT8R128K32-15WWX UT8R128K32-15WWC
OCR Text	...2. test per mil-std-883, method 1012. recommended operating conditions symbol parameter limits v dd1 dc supply voltage -0.3 to 2.0v v dd2 dc supply voltage -0.3 to 3.8v v i/o voltage on any pin -0.3 to 3.8v t stg storage temperature -65 t...
Description	128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish hot solder dipped. 128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish gold. 128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish factory option. 128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish hot solder dipped. 128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish gold. 128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish factory option. 128K x 32 SRAM. 15ns access time. Lead finish hot solder dipped. 128K x 32 SRAM. 15ns access time. Lead finish factory option. 128K x 32 SRAM. 15ns access time. Lead finish gold.
File Size	180.14K / 14 Page	View it Online	Download Datasheet

				Motorola, Inc
Part No.	SCM69C433TQ15 SCM69C433 SCM69C433TQ15R MCM69C433TQ15 MCM69C433TQ15R MCM69C433
OCR Text	...ate method (MIL SPEC-883 Method 1012.1). MCM69C433*SCM69C433 4 For More Information On This Product, Go to: www.freescale.com MOTOR...BIT NUMBER In its basic operating mode, the MCM69C433 reads a data 0 U 15 D input word through MQ bu...
Description	16K X 64 CAM
File Size	405.44K / 24 Page	View it Online	Download Datasheet

				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation]
Part No.	HCTS85D HCTS85DMSR HCTS85HMSR HCTS85K HCTS85KMSR HCTS85MS FN3059
OCR Text	...) Dose Rate Survivability: >1 x 1012 RAD (Si)/s Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse Latch-Up Free Under Any Conditions Fanout (Over ...bit high speed magnitude comparator. This device compares two binary, BCD, or other monotonic codes ...
Description	Radiation Hardened 4-Bit Magnitude Comparator From old datasheet system
File Size	213.52K / 10 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HCTS75D HCTS75DMSR HCTS75HMSR HCTS75K HCTS75KMSR HCTS75MS FN3189
OCR Text	...* Dose Rate Survivability: >1 x 1012 RAD (Si)/s * Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse * Latch-Up Free Under Any Conditions * Militar...bit bistable transparent latch. Each of the two latches are controlled by a separate enable input (E...
Description	From old datasheet system Radiation Hardened Dual 2-Bit Bistable Transparent Latch
File Size	136.44K / 9 Page	View it Online	Download Datasheet

				Aeroflex Circuit Technology
Part No.	UT8Q1024K8-UWX
OCR Text	...3. Test per MIL-STD-883, Method 1012. RECOMMENDED OPERATING CONDITIONS SYMBOL V DD TC V IN PARAMETER Positive supply voltage Case temperature range DC input voltage LIMITS 3.0 to 3.6V -40 to +125C 0V to V DD 4 DC ELECTRICAL CHARACT...
Description	high-performance 1M byte (8Mbit) CMOS static RAM
File Size	238.30K / 16 Page	View it Online	Download Datasheet

				Aeroflex Circuit Technology
Part No.	5962L9960701QUA 5962L9960701QUC 5962L9960701QUX 5962L9960701QXA 5962L9960701QXC 5962L9960701QXX 5962L9960701TUA 5962L9960701TUC 5962L9960701TUX 5962L9960701TXA 5962L9960701TXC 5962L9960702QUA 5962L9960701TXX 5962L9960702QUC 5962L9960702QUX 5962L9960702QXA 5962L9960702QXC 5962L9960702QXX 5962L9960702TUA 5962L9960702TUC 5962L9960702TUX 5962D9960703TXC 5962D9960701TXC 5962D9960702TXC 5962D9960704TXC 5962L9960702TXC 5962L9960703TXC 5962L9960704TXC 5962P9960701TXC 5962P9960702TXC 5962D9960701QUA 5962D9960701QUC 5962D9960701QUX 5962D9960701QXA 5962D9960701QXC 5962D9960701TUA 5962D9960701QXX 5962D9960701TUC 5962D9960701TUX 5962P9960701TXA 5962D9960701TXA 5962D9960704TUA 5962D9960702TUA 5962P9960703TXC UT8Q512-UWX 5962D9960704TXA 5962D9960702TXX 5962D9960704TXX 5962L9960702TXX 5962P9960701TUA 5962P9960701TUX 5962P9960701TUC 5962D9960703TUC 5962L9960703TUC 5962L9960704TUC 5962P9960702TUC 5962P9960703TUC UT8Q512-20UWC UT8Q512-UWC 5962D9960703TUX 5962D9960704QXA 5962D9960704QXC 5962D9960704QXX
OCR Text	...3. test per mil-std-883, method 1012. recommended operating conditions symbol parameter limits v dd dc supply voltage -0. 5 t o 4.6v v i/o voltage on any pin -0. 5 t o 4.6v t stg storage temperature -65 to +150 c p d maximum power dissi...
Description	512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si) 512K x 8 SRAM. 25ns access time, 3.3V operation. Lead finish factory option. Extended industrial temperature range flow. 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si) 512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Extended industrial temperature range flow. 512K x 8 SRAM. 25ns access time, 3.3V operation. Lead finish gold. Extended industrial temperature range flow. 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si)
File Size	127.88K / 15 Page	View it Online	Download Datasheet

				Intersil
Part No.	HS9-81C55RH HS-81C56RH HS9-81C56RH
OCR Text	...RAD(Si)/s - Latch-Up Free > 1 x 1012 RAD(Si)/s * Electrically Equivalent to Sandia SA 3001 * Pin Compatible with Intel 8155/56 * Bus Compati...Bit I/O Ports * One Programmable 6-Bit I/O Port * Programmable 14-Bit Binary Counter/Timer * Multipl...
Description	Radiation Hardened 256 x 8 CMOS RAM
File Size	90.27K / 15 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HCTS299D HCTS299DMSR HCTS299HMSR HCTS299K HCTS299KMSR HCTS299MS FN3069
OCR Text	...) Dose Rate Survivability: >1 x 1012 RAD (Si)/s Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse Latch-Up Free Under Any Conditions Fanout (Over ...bit shift/ storage register with three-state bus interface capability. The register has four synchro...
Description	From old datasheet system Radiation Hardened 8-Bit Universal Shift Register; Three-State
File Size	117.63K / 13 Page	View it Online	Download Datasheet

				Aeroflex Circuit Technology
Part No.	5962-0153201QYX 5962D0153201QYX 5962L0153201QYA 5962L0153201TYA 5962L0153201TYC 5962L0153201TYX 5962L0153201QYC 5962L0153201QYX 5962-0153201QYA 5962-0153201QYC 5962-0153201TYX 5962D0153201TYC 5962D0153201QYC 5962P0153201TYA
OCR Text	...3. test per mil-std-883, method 1012. recommended operating conditions symbol parameter limits v dd dc supply voltage -0. 5 t o 4.6v v i/o voltage on any pin -0. 5 t o 4.6v t stg storage temperature -65 to +150 c p d maximum power dissi...
Description	1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose none. 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)). 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish factory option. Total dose 5E4(50krad(Si)). 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)). 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose 5E4(50krad(Si)). 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish hot solder dipped. Total dose none. 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose none. 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish factory option. Total dose none. 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)). 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)). 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
File Size	95.93K / 14 Page	View it Online	Download Datasheet

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