1-megabit 128k x 8 single 2 7- pdf Datasheet P14 Description --- IC-ON-LINE


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1-megabit 128k x 8 single 2 7- Datasheet PDF File

For 1-megabit 128k x 8 single 2 7- Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |

				Cypress Semiconductor, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
Part No.	CY7C1350F CY7C1350F-100AC CY7C1350F-100AI CY7C1350F-100BGI CY7C1350F-100BGC CY7C1350F-225AI CY7C1350F-225BGI CY7C1350F-250BGI CY7C1350F-133AC CY7C1350F-133AI CY7C1350F-133BGC CY7C1350F-133BGI CY7C1350F-166AC CY7C1350F-166AI CY7C1350F-166BGC CY7C1350F-166BGI CY7C1350F-200AC CY7C1350F-200AI CY7C1350F-200BGC CY7C1350F-200BGI CY7C1350F-225AC CY7C1350F-225BGC CY7C1350F-250AC CY7C1350F-250AI CY7C1350F-250BGC
Description	4-Mb (128k x 36) Pipelined SRAM with Nobl Architecture 128k x 36 ZBT SRAM, 2.8 ns, PBGA119 4-Mb (128k x 36) Pipelined SRAM with Nobl Architecture 128k x 36 ZBT SRAM, 4.5 ns, PQFP100 4-Mb (128k x 36) Pipelined SRAM with Nobl Architecture 128k x 36 ZBT SRAM, 2.6 ns, PBGA119 4-Mb (128k x 36) Pipelined SRAM with Nobl Architecture 128k x 36 ZBT SRAM, 2.6 ns, PQFP100 CABLE ASSEMBLY; LEAD-FREE SOLDER; SMA MALE TO SMA MALE; 50 OHM, PE-SR047FL (.047" RE-SHAPABLE) 128k x 36 ZBT SRAM, 3.5 ns, PQFP100 4-Mb (128k x 36) Pipelined SRAM with Nobl Architecture 128k x 36 ZBT SRAM, 2.8 ns, PQFP100 4-Mb (128k x 36) Pipelined SRAM with Nobl(TM) Architecture
File Size	391.04K / 16 Page	View it Online	Download Datasheet

				IDT Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC Integrated Device Techn...
Part No.	IDT71V3577S75PFG IDT71V3577SA80PFGI IDT71V3577SA85PFGI IDT71V3577SA75PFG IDT71V3577SA75PFGI IDT71V3577YS75PFGI IDT71V3577YSA80PFG IDT71V3577YSA75PFG IDT71V3577YSA75PFGI IDT71V3577YSA80PFGI IDT71V3579S75PFG IDT71V3579YS75PFGI IDT71V3579YSA80BQG IDT71V3579YSA80BQGI IDT71V3579YS80BQG IDT71V3579YS80BQGI IDT71V3579YS75BQGI IDT71V3579S85BQGI IDT71V3579S85BGG IDT71V3579SA75BGGI IDT71V3579SA75BQG IDT71V3579SA75BGG IDT71V3579SA75PFG IDT71V3579SA75PFGI IDT71V3577YSA75BQG IDT71V3579S75BQG IDT71V3577YS80BQG IDT71V3577YS80PFG IDT71V3577YS80BQGI IDT71V3577YS80PFGI IDT71V3577YS85BGG IDT71V3577YS85BGGI IDT71V3577YS85BQG IDT71V3577YS85BQGI IDT71V3577YS85PFG IDT71V3577YS85PFGI IDT71V3577S75BQ8
Description	3.3V 128k x 36 Synchronous Flow-Through SRAM w/3.3V I/O 128k x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, single Cycle Deselect 128k的米656 × 18 3.3同步SRAM.3VI / O的流量，通过输出脉冲计数器，单周期取 128k x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, single Cycle Deselect 256K x 18 CACHE SRAM, 7.5 ns, PQFP100 128k x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, single Cycle Deselect 128k x 36 CACHE SRAM, 7.5 ns, PQFP100 128k x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, single Cycle Deselect 128k的米656 × 18 3.3同步SRAM.3V的I / O的流量，通过输出脉冲计数器，单周期取 128k x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, single Cycle Deselect 256K x 18 CACHE SRAM, 8 ns, PBGA165
File Size	524.78K / 22 Page	View it Online	Download Datasheet

				Atmel, Corp. ATMEL CORP
Part No.	AT28C010E-12FM/883 AT28C010E-12EC AT28C010-12EM AT28C010-12EC AT28C010E-12EM AT28C010E-15FM AT28C010-20BC AT28C010-25BM
Description	120NS, 32FLTPCK, 883C; LEV B COMPLIANT(EEPROM) 128k x 8 EEPROM 5V, 120 ns, CDFP32 128k x 8 EEPROM 5V, 120 ns, CQCC32 120NS, 32 LCC, MIL TEMP(EEPROM) 128k x 8 EEPROM 5V, 150 ns, CDFP32 128k x 8 EEPROM 5V, 200 ns, CDIP32 128k x 8 EEPROM 5V, 250 ns, CDIP32
File Size	77.91K / 2 Page	View it Online	Download Datasheet

				AMD[Advanced Micro Devices] Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
Part No.	AM29LV102B AM29LV102BB-120EC AM29LV102BB-120ECB AM29LV102BB-120EE AM29LV102BB-120EEB AM29LV102BB-120EI AM29LV102BB-120EIB AM29LV102BB-120FC AM29LV102BB-120FCB AM29LV102BB-120FE AM29LV102BB-120FEB AM29LV102BB-120FI AM29LV102BB-120FIB AM29LV102BB-120JC AM29LV102BB-120JCB AM29LV102BB-120JE AM29LV102BB-120JEB AM29LV102BB-120JI AM29LV102BB-120JIB AM29LV102BB-55REC AM29LV102BB-55RECB AM29LV102BB-55REE AM29LV102BB-55REEB AM29LV102BB-55REI AM29LV102BB-55REIB AM29LV102BB-55RFC AM29LV102BB-55RFCB AM29LV102BB-55RFE AM29LV102BB-55RFEB AM29LV102BB-55RFI AM29LV102BB-55RFIB AM29LV102BB-55RJC AM29LV102BB-55RJCB AM29LV102BB-55RJE AM29LV102BB-55RJEB AM29LV102BB-55RJI AM29LV102BB-55RJIB AM29LV102BB-70EC AM29LV102BB-70ECB AM29LV102BB-70EE AM29LV102BB-70EEB AM29LV102BB-70EI AM29LV102BB-70EIB AM29LV102BB-70FC AM29LV102BB-70FCB AM29LV102BB-70FE AM29LV102BB-70FEB AM29LV102BB-70FI AM29LV102BB-70FIB AM29LV102BB-70JC AM29LV102BB-70JCB AM29LV102BB-70JE AM29LV102BB-70JEB AM29LV102BB-70JI AM29LV102BB-70JIB AM29LV102BB-90EC AM29LV102BB-90ECB AM29LV102BB-90EE AM29LV102BB-90EEB AM29LV102BB-90EI AM29LV102BB-90EIB AM29LV102BB-90FC AM29LV102BB-90FCB AM29LV102BB-90FE AM29LV102BB-90FEB AM29LV102BB-90FI AM29LV102BB-90FI
Description	2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory IC SMT SRAM 128k x 8 70NS 5V SOP-32 SRAM; Memory Type:Asynchronous SRAM; Memory Size:1MB; Memory Configuration:64K x 16; Access Time, Tacc:10ns; Package/Case:44-TSOP-II; Operating Temp. Max:70 C; Operating Temp. Min:0 C RoHS Compliant: Yes 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 256K x 8 FLASH 3V PROM, 120 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 2兆位256亩8位）.0伏的CMOS只，引导扇区32引脚闪存
File Size	38.19K / 7 Page	View it Online	Download Datasheet

				Maxwell Technologies, Inc
Part No.	28LV010RPDE-25 28LV010RT1DE-25 28LV010RT2DE-25 28LV010RT4DB20 28LV010RT4DB25 28LV010RT4DB-20 28LV010RPFS20 28LV010RPFS25 28LV010RT1DB25 28LV010RT1DE25 28LV010RT2DS20 28LV010RT2DS25 28LV010RT2DE20 28LV010RT2DB-20 28LV010RT2DS-20 28LV010RT2DB-25 28LV010RT2DE25 28LV010RT2DI20 28LV010RT2DB25 28LV010RT2DI-25 28LV010RT2DB20 28LV010RT2DI-20 28LV010RT2DE-20 28LV010RT4DE-20 28LV010RT4DS25 28LV010RT4DE25 28LV010RT4DI-20 28LV010RT4DI-25 28LV010RT4DI20 28LV010RT4DI25 28LV010RT4DS-20 28LV010RT4DS-25 28LV010RT4DS20 28LV010RT1FI-25 28LV010RT1FS-20 28LV010RT1FS-25 28LV010RT2FS25 28LV010RT2FS-20 28LV010RT2FI-20 28LV010RT1DE-20 28LV010RPFS-20 28LV010RT1DB20 28LV010RT2FB20 28LV010RT2FE-25 28LV010RT1DI-20 28LV010RT2FS20 28LV010RT4FS-20 28LV010RT2FB-25 28LV010RT2FB25 28LV010RT2FE-20 28LV010RT2FE20 28LV010RT1DS-20 28LV010RT2FE25 28LV010RT1FS20 28LV010RT1FS25 28LV010RT2FS-25 28LV010RT4FS20 28LV010RT1DS25 28LV010RT1FB-20 28LV010RT1FB25 28LV010RT1DB-20 28LV010RT1DS20 28LV010RT4FS25 28LV010RPFB25 28LV010RPDI25 28LV010RPDB20 28LV010RPDE-20 28LV010RPDI-20 28LV010RT1FI-20 28LV010RPFB-20 28LV010RT4FE-20 28LV010RT4FI20 28LV010RPFI-20 MAxWELLTECHNOLOGIES-28LV010RPFI-20 28LV010RPDI20
Description	3.3V 1 Megabit (128k x 8-Bit) EEPROM 3.3V 1 Megabit (128k x 8-Bit) EEPROM 128k x 8 EEPROM 3V, 200 ns, DFP32 3.3V 1 Megabit (128k x 8-Bit) EEPROM 128k x 8 EEPROM 3V, 200 ns, DIP32 3.3V 1 Megabit (128k x 8-Bit) EEPROM 3.3V兆位28K的8位）的EEPROM CAP-ARR 200PF x4 100V 10% NP0(C0G) SMD-0508 PLATED-NI/SN TR-7 1K/REEL CAP ARRAY, 2 x 10NF 50V 0508x7RCAP ARRAY, 2 x 10NF 50V 0508x7R; Capacitance:10nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W2A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C); CAP ARRAY, 2 x 22NF 16V 0405x5RCAP ARRAY, 2 x 22NF 16V 0405x5R; Capacitance:22nF; Voltage rating, DC:16V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :20%; Tolerance, -:20%; Temp, op. max:85(degree C); CAP ARRAY, 2 x 15PF 50V 0405NPOCAP ARRAY, 2 x 15PF 50V 0405NPO; Capacitance:0.015nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C); CAP ARRAY, 2 x 680PF 50V 0405NPOCAP ARRAY, 2 x 680PF 50V 0405NPO; Capacitance:0.68nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C); CAP ARRAY, 4 x 100PF 50V 0508NPOCAP ARRAY, 4 x 100PF 50V 0508NPO; Capacitance:0.1nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W2A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C); CAP ARRAY, 2 x 10NF 16V 0405x7RCAP ARRAY, 2 x 10NF 16V 0405x7R; Capacitance:10nF; Voltage rating, DC:16V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :20%; Tolerance, -:20%; Temp, op. max:125(degree C); Ceramic Capacitor Array; Capacitor Type:Chip Array; Capacitance:22pF; Capacitance Tolerance: /- 10%; Voltage Rating:50VDC; Capacitor Dielectric Material:Multilayer Ceramic; Package/Case:0405; Termination:SMD RoHS Compliant: Yes CAP ARRAY, 2 x 1000PF 50V 0405x7RCAP ARRAY, 2 x 1000PF 50V 0405x7R; Capacitance:1nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
File Size	360.92K / 19 Page	View it Online	Download Datasheet

				ATMEL[ATMEL Corporation]
Part No.	AT49BV-LV002 AT49LV002T AT49BV002 AT49BV002N AT49BV002NT AT49BV002T AT49LV002 AT49LV002N AT49LV002NT
Description	2-MEGABIT (256K x 8) single 2.7-VOLT BATTERY-VOLTAGE⒙ FLASH MEMORY 2-Megabit (256K x 8) single 2.7-volt Battery-Voltage⑩ Flash Memory
File Size	118.69K / 21 Page	View it Online	Download Datasheet

				Fujitsu, Ltd. Fujitsu Limited
Part No.	MBM29F200BA12 MBM29F200TA12
Description	2M (256K×8/128k×16) Bit Flash Memory(V 电源电压256K×8/128k×16闪速存储器) 200万（256K × 8/128k × 16）位快闪记忆体（V的电源电56K × 8/128k × 16闪速存储器 2M (256K?8/128k?16) Bit Flash Memory(??V ?垫??靛?256K?8/128k?16???瀛???ī
File Size	409.49K / 49 Page	View it Online	Download Datasheet

				Aeroflex Circuit Techno... Samsung Semiconductor Co., Ltd. SUSUMU Co., Ltd. Aeroflex, Inc. Aeroflex Inc. http://
Part No.	ACT-F1288N-060P7Q ACT-F1288N-060P4T ACT-F1288N-060P4Q ACT-F1288N-060P4M ACT-F1288N-060P7T ACT-F1288N-070F6C ACT-F1288N-060F6M ACT-F1288N-060P7I ACT-F1288N-060P4C ACT-F1288N-060P4I ACT-F1288N-060P7M ACT-F1288N-060F6Q ACT-F1288N-060F6C ACT-F1288N-060F6T ACT-F1288N-070F6M ACT-F1288N-060F6I ACT-F1288N-060P7C ACT-F1288N-070F6I ACT-F1288N-090F6I ACT-F1288N-150P7M ACT-F1288N-150F6C ACT-F1288N-150F6I ACT-F1288N-150F6M ACT-F1288N-150F6Q ACT-F1288N-150F6T ACT-F1288N-150P4T ACT-F1288N-150P7T ACT-F1288N-070P4M ACT-F1288N-070P7Q ACT-F1288N-070P7M ACT-F1288N-070P4T ACT-F1288N-070P4Q ACT-F1288N-070F6Q ACT-F1288N-070P7I ACT-F1288N-070F6T ACT-F1288N-070P4I ACT-F1288N-070P4C ACT-F1288N-070P7C ACT-F1288N-090F6C ACT-F1288N-090F6M ACT-F1288N-090F6Q ACT-F1288N-090P4C ACT-F1288N-090P4I ACT-F1288N-090P4M ACT-F1288N-090P4Q ACT-F1288N-090P4T ACT-F1288N-090P7I ACT-F1288N-090P7M ACT-F1288N-090P7Q ACT-F1288N-090P7T ACT-F1288N-090P7C ACT-F1288N-090F6T ACT-F1288N-150P4I ACT-F1288N-150P4M ACT-F1288N-150P4C ACT-F1288N-150P4Q ACT-F1288N-120P4M ACT-F1288N-120P4T ACT-F1288N-120P7C ACT-F1288N-120F6C ACT-F1288N-120F6T ACT-F1288N-120F6I ACT-F1288N-150P7C ACT-F1288N-120F6M ACT-F1288N-120P7T ACT-F1288N-120F6Q ACT-F1288N-1
Description	EEPROM EEPROM Cable Gland (Clamp); Connector Shell Size:24; Leaded Process Compatible:No; Length:2.56"; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes 行为F128k8高兆位闪存单片 128k x 8 FLASH 5V PROM MODULE, 60 ns, CDIP32 HERMETICALLY SEALED, CERAMIC, DIP-32 128k x 8 FLASH 5V PROM MODULE, 70 ns, CDIP32 HERMETICALLY SEALED, CERAMIC, DIP-32 128k x 8 FLASH 5V PROM MODULE, 60 ns, CDFP32 HERMETICALLY SEALED, CERAMIC, FP-32 128k x 8 FLASH 5V PROM MODULE, 70 ns, CDFP32 HERMETICALLY SEALED, CERAMIC, FP-32 ACT-F128k8 High Speed 1 Megabit Monolithic FLASH 行为F128k8高兆位闪存单片 ACT-F128k8 High Speed 1 Megabit Monolithic FLASH 行为F128k8高1兆位闪存单片 Retriggerable monostable multivibrator 14-PDIP 0 to 70 Dual J-K Negative-Edge-Triggered Flip-Flops With Clear And Preset 16-SO 0 to 70 Retriggerable monostable multivibrator 14-SOIC 0 to 70 Dual J-K Negative-Edge-Triggered Flip-Flops With Clear And Preset 16-PDIP 0 to 70 Dual J-K Negative-Edge-Triggered Flip-Flops With Clear And Preset 16-SOIC 0 to 70 D21 - BACKSHELL ENVIRON STRT MIL D52 - BACKSHELL ENVIRON STRT MIL CONNECTOR ACCESSORY Retriggerable monostable multivibrator 14-SO 0 to 70
File Size	153.94K / 21 Page	View it Online	Download Datasheet

				Toshiba, Corp. Advanced Micro Devices, Inc. Spansion, Inc.
Part No.	AM29LV010B-45RJC AM29LV010B-55JC AM29LV010B-55JE AM29LV010B-55JI AM29LV010B-45REC AM29LV010B-45RFC AM29LV010B-90FI AM29LV010B-70EI AM29LV010B-70JI AM29LV010B-90JC
Description	A 20V single N-Channel HExFET Power MOSFET in a DirectFET ST Package 100V single N-Channel HExFET Power MOSFET in a SO-8 package 80V single N-Channel HExFET Power MOSFET in a SO-8 package -40V single P-Channel HExFET Power MOSFET in a TSOP-6 (Micro 6) package 20V Dual N-Bidirectional HExFET Power MOSFET in a 6-Lead FlipFET 30V N-Channel PowerTrench MOSFET 30VN沟道的PowerTrench MOSFET -12V single P-Channel HExFET Power MOSFET in a TSSOP-8 package x8闪存EEPROM 1 Mb (128k x 8) Uniform Sector, Flash Memory 128k x 8 FLASH 3V PROM, 70 ns, PQCC32 x8 Flash EEPROM x8闪存EEPROM
File Size	529.07K / 35 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K7N403601B K7N403601B-QC13 K7N403609B-QC20 K7N401809B-QC20 K7N401801B K7N401801B-QC13
Description	128kx36 & 256Kx18 Pipelined NtRAMTM 256 Megabit, 3.0 Volt-only Page Mode Flash Memory 128kx36 & 256Kx18 Pipelined NtRAM 128k × 36
File Size	383.87K / 18 Page	View it Online	Download Datasheet

For 1-megabit 128k x 8 single 2 7- Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |

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