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0.5v-6v Datasheet PDF File

For 0.5v-6v Found Datasheets File :: 55633 Search Time::4.531ms
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				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	IRF234 IRF235 IRF236 IRF237
OCR Text	0.45 and 0.68 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. T...5V IRF234, IRF235 100 10 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERA...
Description	8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	68.51K / 7 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S
OCR Text	... Max. 30 20 90 57 360 120 3.1 0.96 -55 to + 150 Units V V A W W mW/C C Thermal Resistance Parameter RJC RCS RJA RJA Junction-to-C...5V, ID = 12A 3.0 V VDS = VGS, ID = 250A 20 VDS = 24V, VGS = 0V A 100 VDS = 24V, VGS = 0V, TJ = 125C...
Description	Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A? Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET（减振钢板基本\u003d 30V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 90A型? Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A) Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A) Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?) Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??
File Size	120.60K / 11 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	IRF530N
OCR Text	...ck capacitance CONDITIONS VGS = 0 V; ID = 0.25 mA; Tj = -55C VDS = VGS; ID = 1 mA Tj = 175C Tj = -55C VGS = 10 V; ID = 9 A Tj = 175C VDS = 2...5V 4.8 V 4.6 V 0.2 0.4 0.6 0.8 1 1.2 1.4 Drain-Source Voltage, VDS (V) 1.6 4.4 V 1.8 2 Fig.2. Nor...
Description	N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体 N-channel TrenchMOS TM transistor
File Size	95.87K / 7 Page	View it Online	Download Datasheet

				Samsung semiconductor International Rectifier Intersil Corporation
Part No.	IRF9150
OCR Text	0.150 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET de...5V 1 0 0 -10 -20 -30 -40 -50 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE O...
Description	-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
File Size	56.86K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF9520 FN2281
OCR Text	0.600 Ohm, P-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy i...5V VGS = -4V 0 0 -10 -20 -30 -40 VDS, DRAIN TO SOURCE VOLTAGE (V) -50 FIGURE 4. FORWA...
Description	6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??) From old datasheet system 6A 100V 0.600 Ohm P-Channel Power MOSFET 6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET
File Size	57.36K / 7 Page	View it Online	Download Datasheet

				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	IRF9540 RF1S9540SM FN2282
OCR Text	0.200 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced powe...5V 0 0 -10 -20 VGS = -7V VGS = -6V -30 VGS = -4V -40 -50 1 VDS, DRAIN TO SOURCE VOLTAGE (V) ...
Description	19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB 19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs From old datasheet system
File Size	59.17K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF9620 FN2283
OCR Text	...620 -200 -200 -3.5 -2 -14 20 40 0.32 290 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Breakdown Voltage (Note...5V -1 VGS = -4V 0 0 -10 -20 -30 -40 -50 -0.1 -1 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. ...
Description	3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET 3.5A 200V 1.500 Ohm P-Channel Power MOSFET From old datasheet system
File Size	57.96K / 7 Page	View it Online	Download Datasheet

				Samsung Electronic Samsung semiconductor
Part No.	K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0
OCR Text	... History Revision No. History 0.0 Initial issue. Draft Date July 17th 2000 Remark Advanced Information Preliminary 0.1 1. Su...5V Preliminary 0.3 Mar. 2th 2001 0.4 Jul. 22th 2001 ~ 2.5V VCC High WP ...
Description	32M x 8 Bit NAND Flash Memory
File Size	607.24K / 29 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. 意法半导 ST Microelectronics
Part No.	L4973V3 L4973V3.3 L4973V3.3-L4973V5.1 L4973V33 L4973V33-L4973V51 L4973D3 L4973D3.3 L4973D3.3-L4973D5.1 L4973D33 L4973D33-L4973D51 L4973D5 L4973D5.1 L4973D51 LV4973D L4973 L4973V5.1 L4973V51 -L4973D33-L4973D51
OCR Text	...sistor (with a typical Rdson of 0.15ohm) to obtain very high efficiency and very fast switching times. Switching frequency up to 300KHz are ...5V IO = 3.5A VCC = 8V to 55V VO = 5.1V; IO = 3.5A VO = 3.3V; IO = 3.5A Vi = VCC +2VRMS VO = Vref; IO...
Description	RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS 抗辐射高效，5安培开关稳压器 3.5A STEP DOWN SWITCHING REGULATOR
File Size	221.38K / 16 Page	View it Online	Download Datasheet

				STMicroelectronics SGS Thomson Microelectronics
Part No.	LD1085D2M33 LD1085V33 LD1085-SERIES LD1085D2T80
OCR Text	...ility 1000 hrs Ta = 125 oC IO = 0 mA IO = 0 to 3 A Test Conditions Tj = 25 oC VIN = 3.4 to 30 V Min. 1.782 1.764 Typ. 1.8 1.8 0.2 0.4 2 4 1....5V VIN - VO = 25V Ta = 25 oC 30ms Pulse IO = 3 A f = 120 Hz VIN = 5.3 1V Tj = 25 C o B = 10Hz t...
Description	3A LOW DROP FIXED AND ADJUSTABLE POSITIVE VOLTAGE REGULATORS
File Size	183.19K / 15 Page	View it Online	Download Datasheet

For 0.5v-6v Found Datasheets File :: 55633 Search Time::4.531ms
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