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hitachi
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| Part No. |
HSK110
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| OCR Text |
...* Low forward resistance. (rf = 0.9 max) * LLD package is suitable for high density surface mounting and high speed assembly.
1 2nd. band Cathode band
Outline
Cathode band 2
Ordering Information
Type No. Cathode band 2nd.band Packa... |
| Description |
From old datasheet system
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| File Size |
27.71K /
3 Page |
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it Online |
Download Datasheet
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TT electronics Semelab, Ltd.
International Rectifier, Corp.
Seme LAB
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| Part No. |
IRFN140SMD
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| OCR Text |
0 (0 .1 4 2 ) M ax.
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 ...170A/ms , VDD BVDSS , TJ 150C , SUGGESTED RG = 9.1W
Semelab plc.
Telephone +44(0)1455 556565... |
| Description |
ER CET 0 22 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Power MOSFET(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）3.9A，的Rds（on）：0.077Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本100V的，身份证（续）3.9A时，RDS（对）：0.077Ω））
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| File Size |
22.23K /
2 Page |
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it Online |
Download Datasheet |
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Price and Availability
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