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  0.03w Datasheet PDF File

For 0.03w Found Datasheets File :: 224    Search Time::2.797ms    
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    Hynix Semiconductor, Inc.
NXP Semiconductors N.V.
Part No. HYM5V64834ASLTZG-60 HYM5V64834ASLTZG-50 HYM5V64834ATZG-60 HYM5V64834ATZG-50 HYM5V64804ASLTZG-50 HYM5V64804ATZG-50
OCR Text ...atent licenses are implied. rev.0 4 / may .9 8 ...03w 60 2.59w 3.46w fast access time and cycle time speed trac tcac thpc 5 0 5 0ns 13 ns 25ns 6 0 ...
Description 8M X 64 EDO DRAM MODULE, 50 ns, DMA144 SODIMM-144
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块

File Size 202.72K  /  11 Page

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    BAR67-03W

INFINEON TECHNOLOGIES AG
Part No. BAR67-03W
OCR Text ...rd voltage i f = 50 ma v f - 0.95 1.2 v ac characteristics diode capacitance v r = 35 v, f = 1 mhz v r = 0 v, f = 100 mhz c t ...03w jul-09-2001 3 forward current i f = f ( v f ) t a = 25c 0.5 0.6 0.7 0.8 0.9 1 v 1.2 v ...
Description EZ-OTG™ Programmable USB On-The-Go
150 V, SILICON, PIN DIODE

File Size 36.80K  /  4 Page

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    Intel Corp.
Intel, Corp.
Part No. CE5038
OCR Text ...ations ? less than +/- 3 and +/-0.6 db i/q quadrature balance ? integrated rf loop through for cascaded tuner applications ? power saving ...03w rf agc input lnb supply i out q out ce5038 data sheet table of contents 3 intel corporation f...
Description DVB-S2 Advanced Modulation Satellite Tuner DVB - S2的先进调制卫星调谐器

File Size 460.59K  /  41 Page

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    Infineon
Part No. BAT62-02L BAT62-02W BAT62-08S BAT62-07W BAT62-03W
OCR Text ...arallel pair, high isolation 2 0.4 0.6 1.8 0.4 1.8 1.6 1.6 62s l 62 l 62 62s 62s 69s *preliminary data jul-21-2003 2 bat62...03w, t s 108 c bat62-02w, t s 109 c bat62-07w, t s 103 c bat62-08s, -09s, t s ...
Description Latest Silicon Discretes - Schottky Diode for power leveling
Schottky Diodes - Low barrier silicon RF Schottky diode for detectors
Schottky Diodes - Low barrier silicon RF Schottky diode array

File Size 508.27K  /  9 Page

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    Infineon
Part No. BAR65-02L
OCR Text ...ry low forward resistance (typ. 0.65 @ 5 ma) low capacitance (typ. 0.5 pf @ 0v) fast switching applications bar65-02l bar65-02v bar65-03w bar65-07 type package configuration l s (nh) marking bar65-02l * bar65-02...
Description Diodes for switching applications up to 3GHz

File Size 469.53K  /  9 Page

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    Infineon
Part No. BBY57-03W
OCR Text ...nce v r = 1 v, f = 470 mhz 0.3 - r s - case capacitance f = 1 mhz c c pf - 0.09 - series inductance l s - nh 1.8 - bby 57-03w aug-03-1998 3 temperature coefficient of the diode capacitance t cc = f ( v r ) 0.0 0.5 1.0 1.5...
Description Silicon High Q Hyperabrupt Tuning Diode

File Size 72.60K  /  3 Page

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    Infineon
Part No. BAR63-07L4
OCR Text ... anode parallel pair, leadless 0.4 0.6 0.6 1.8 1.8 1.4 1.8 1.4 1.8 1.4 0.4 g g gg g g4s g4s g5s g5s g6s g6s p3s * pre...03w, t s 115c bar63-04...bar63-06 , t s 55c bar63-04s , t s 115c bar63-04w...bar63-06w...
Description Diodes for switching applications up to 3GHz

File Size 94.04K  /  10 Page

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    Infineon
Part No. BAR63-03W
OCR Text ...nted on alumina 15mm x 16.7mm x 0.7mm bar 63-03w oct-05-1999 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics breakdown voltage i (br) = 5 a v (br)...
Description PIN Diodes - PIN diode for high-speed switching of RF signals

File Size 89.56K  /  4 Page

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    Infineon
Part No. BBY58-07L4 BBY58-02L
OCR Text ... anode parallel pair, leadless 0.4 0.6 0.6 0.6 1.4 1.4 0.4 88 8 88 8 yel. b5s b6s b8 *preliminary maximum ratings at t a = 25c, unless otherwise specified parameter symbol value unit diode reverse voltage v r 10 v forward ...
Description Diodes for low voltage VCO applications

File Size 113.78K  /  4 Page

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